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Jutao Jiang

from Tigard, OR
Age ~50
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Also known as:
Juato Jiang, Jitao Jiang, Jiang Jutao
Related to:
Kenneth F Erdman, 78
Connected to:
Amber S Jiang, 37Anne Jiang, 31Belinda C Jiang, 30Boju Jiang, 87Bruce Jiang, 48Candy Jiang, 54Carl M Jiang, 45Carol A Jiang, 55Chai Jiang, 39Changsu Jiang, 54

Jutao Jiang Phones & Addresses

  • Tigard, OR
  • 8495 Salt Creek Ct, Boise, ID 83709 (208) 362-9441
  • Lake Oswego, OR
  • Evanston, IL

Work

Company: Sionyx inc. Jul 2012 Address: Portland, Oregon Area Position: Manager, sensor characterization/test/isp

Education

Degree: Ph.D. School / High School: Northwestern University 1998 to 2004 Specialities: Electrical & Computer Engineering

Skills

Sensors • Semiconductors • Cmos • Characterization • Matlab • Simulations • Image Sensors • Image Processing • Silicon • Ic • Device Characterization • Thin Films • Soc • Mixed Signal • Fpga • Jmp • Verilog • Mems • Asic • Cvd • Optoelectronics • Cadence Virtuoso • Hdr Sensor • Time of Flight Sensor • Global Shutter Sensor • Program Management • Team Management • Project Management • Software Development • Sensor Architecture • Labview • Fdtd • Qwip • Infrared Detector

Languages

Mandarin

Industries

Semiconductors

Resumes

Resumes

Jutao Jiang Photo 1

Manager, Sensor Characterization And Test And Isp

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Location:
Portland, OR
Industry:
Semiconductors
Work:
SiOnyx Inc. - Portland, Oregon Area since Jul 2012
Manager, Sensor Characterization/Test/ISP
SiOnyx Inc. - Portland, Oregon Area Dec 2008 - Jun 2012
Sr. Characterization Engineer
MagnaChip Semiconductor Aug 2008 - Dec 2008
Manager, CMOS imager Characterization group
MagnaChip Semiconductor Oct 2007 - Jul 2008
Senior CMOS imager characterization engineer
Micron Technology Jul 2004 - Sep 2007
CMOS imager characterization engineer
Education:
Northwestern University 1998 - 2004
Ph.D., Electrical & Computer Engineering Peking University 1995 - 1998
M.S., Physics Jilin University 1991 - 1995
B.S., Physics
Skills:
Sensors
Semiconductors
Cmos
Characterization
Matlab
Simulations
Image Sensors
Image Processing
Silicon
Ic
Device Characterization
Thin Films
Soc
Mixed Signal
Fpga
Jmp
Verilog
Mems
Asic
Cvd
Optoelectronics
Cadence Virtuoso
Hdr Sensor
Time of Flight Sensor
Global Shutter Sensor
Program Management
Team Management
Project Management
Software Development
Sensor Architecture
Labview
Fdtd
Qwip
Infrared Detector
Languages:
Mandarin

Publications

Us Patents

Photosensitive Imaging Devices And Associated Methods

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US Patent:
8476681, Jul 2, 2013
Filed:
Mar 17, 2011
Appl. No.:
13/050557
Inventors:
Homayoon Haddad - Beaverton OR, US
Jutao Jiang - Tigard OR, US
Jeffrey McKee - Tualatin OR, US
Drake Miller - Tigard OR, US
Chintamani Palsule - Lake Oswego OR, US
Leonard Forbes - Corvallis OR, US
Assignee:
Sionyx, Inc. - Beverly MA
International Classification:
H01L 27/148
US Classification:
257228, 438 71
Abstract:
Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

Image Sensor With Built-In Thermometer For Global Black Level Calibration And Temperature-Dependent Color Correction

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US Patent:
20070273775, Nov 29, 2007
Filed:
May 24, 2006
Appl. No.:
11/439179
Inventors:
Jutao Jiang - Boise ID, US
International Classification:
H04N 9/64
US Classification:
348244
Abstract:
A semiconductor image sensor is provided that includes an on-chip temperature-sensitive element. The signal output of the temperature-sensitive element is used to determine a black level value for the image sensor and to calculate a color correction value to be applied to the signal output of the semiconductor image sensor. The signal output of the temperature-sensitive element may be determined by time-averaging a series of signal outputs from the temperature-sensitive element. The temperature-sensitive element signal output may also be determined by combining, e.g., averaging, the signal outputs of a plurality of on-chip temperature-sensitive elements.

Imager Device With Anti-Fuse Pixels And Recessed Color Filter Array

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US Patent:
20080117319, May 22, 2008
Filed:
Nov 16, 2006
Appl. No.:
11/600206
Inventors:
Jutao Jiang - Boise ID, US
Chen Xu - Boise ID, US
International Classification:
H04N 9/083
H04N 3/14
H04N 5/335
H04N 9/04
US Classification:
348273
Abstract:
An imager device having a recessed color filter array formed in a trench of a material layer above a pixel array. Light-sensitive pixels are formed in the center area of the array, while non-light-sensitive pixels are formed in a buffer region adjacent the light-sensitive pixels and beneath an area of the color filter array having a non-uniform thickness. The non-light-sensitive pixels may be anti-fuse pixels functioning as individual, programmable memory cells, thereby providing in-pixel memory for the imager device.

Method And Apparatus For Wafer Level Calibration Of Imaging Sensors

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US Patent:
20080170228, Jul 17, 2008
Filed:
Jan 17, 2007
Appl. No.:
11/653857
Inventors:
Jutao Jiang - Boise ID, US
International Classification:
G01N 21/25
G06F 19/00
H04N 5/76
US Classification:
356416, 702 1, 34823199
Abstract:
Methods and apparatuses for wafer level calibration of imaging sensors and for imaging sensors that have been calibrated at the wafer level. The quantum efficiency spectrum measurement is calculated for calibration pixels (or other region of interest) using spatially separated monochromatic light having a spectral range. The results of the quantum efficiency spectrum measurement are stored, for example in anti-fuse memory cells on the imaging sensor. An imaging system, such as a camera, utilizes an imaging device with the calibrated imaging sensor.

Method And Appratus For Dark Current Compensation Of Imaging Sensors

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US Patent:
20080239111, Oct 2, 2008
Filed:
Mar 26, 2007
Appl. No.:
11/727345
Inventors:
Jutao Jiang - Boise ID, US
International Classification:
H04N 9/64
US Classification:
348243, 348E09037
Abstract:
Disclosed embodiments provide methods and apparatuses for dark current compensation of imager pixels signals. A row-wise dark offset is calculated and then subtracted from the imaging pixel signals, a row-wise dark offset for at least one row being different from a row-wise dark offset for at least another row.

Photosensitive Imaging Devices And Associated Methods

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US Patent:
20110227138, Sep 22, 2011
Filed:
Sep 17, 2010
Appl. No.:
12/885158
Inventors:
Homayoon Haddad - Beaverton OR, US
Jutao Jiang - Tigard OR, US
Jeffrey McKee - Tualatin OR, US
Drake Miller - Tigard OR, US
Leonard Forbes - Corvallis OR, US
Chintamani Palsule - Lake Oswego OR, US
International Classification:
H01L 31/0232
H01L 31/113
H01L 31/18
US Classification:
257291, 257432, 257290, 438 71, 257E31128, 257E31085
Abstract:
Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.

Photosensitive Imaging Devices And Associated Methods

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US Patent:
20110260059, Oct 27, 2011
Filed:
Apr 21, 2011
Appl. No.:
13/091969
Inventors:
Jutao Jiang - Tigard OR, US
Jeffrey McKee - Tualatin OR, US
Martin U. Pralle - Wayland MA, US
International Classification:
H01L 27/146
H01L 27/148
H01L 27/144
US Classification:
250330, 2503384, 257229, 257E2715
Abstract:
A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.

Process Module For Increasing The Response Of Backside Illuminated Photosensitive Imagers And Associated Methods

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US Patent:
20120313204, Dec 13, 2012
Filed:
Jun 11, 2012
Appl. No.:
13/493891
Inventors:
Homayoon Haddad - Beaverton OR, US
Jeffrey McKee - Tualatin OR, US
Jutao Jiang - Tigard OR, US
Drake Miller - Tigard OR, US
Chintamani Palsule - Lake Oswego OR, US
Leonard Forbes - Corvallis OR, US
International Classification:
H01L 31/0232
H01L 31/18
US Classification:
257432, 438 71, 257E31127
Abstract:
Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.
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Jutao Jiang from Tigard, OR, age ~50 Get Report