Inventors:
Hadyn N. G. Wadley - Keswick VA
Xiaowang Zhou - Charlottesville VA
Junjie Quan - Charlottesville VA
Assignee:
University of Virginia Patent Foundation - Charlottesville VA
International Classification:
C23C 1434
US Classification:
20419212, 20419211, 20419215, 2041922, 20429804, 20429806, 20429808, 118723 R, 118723 MP, 427162, 4272557, 427402
Abstract:
A method of producing a multilayer structure that has reduced interfacial roughness and interlayer mixing by using a physical-vapor deposition apparatus. In general the method includes forming a bottom layer having a first material wherein a first plurality of monolayers of the first material is deposited on an underlayer using a low incident adatom energy. Next, a second plurality of monolayers of the first material is deposited on top of the first plurality of monolayers of the first material using a high incident adatom energy. Thereafter, the method further includes forming a second layer having a second material wherein a first plurality of monolayers of the second material is deposited on the second plurality of monolayers of the first material using a low incident adatom energy. Next, a second plurality of monolayers of the second material is deposited on the first plurality of monolayers of the second material using a high incident adatom energy.