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Junichiro Nakayama

from Camas, WA
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Related to:
Melvin S Nakayama, 77Nakayama Hitomi, 52
Connected to:
Akihiko Nakayama, 57Atsuko Nakayama, 62Ayako Nakayama, 85Brad K Nakayama, 48Chiaki Nakayama, 57Cynthia J Nakayama, 72Eiji Nakayama, 75Etsuko Nakayama, 55George B Nakayama, 86James T Nakayama, 40

Junichiro Nakayama Phones & Addresses

  • Camas, WA
  • Vancouver, WA

Work

Company: Sharp labs of america Apr 2012 Address: Camas, WA Position: Executive vice president & chief of advanced technology planning

Education

Degree: Visiting Staff School / High School: Columbia University - Fu Foundation School of Engineering and Applied Science 2001 to 2002 Specialities: Material Physics

Industries

Consumer Electronics

Resumes

Resumes

Junichiro Nakayama Photo 1

Executive Vice President & Chief Of Advanced Technology Planning At Sharp Labs Of America

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Position:
Executive Vice President & Chief of Advanced Technology Planning at Sharp Labs of America
Location:
Portland, Oregon Area
Industry:
Consumer Electronics
Work:
Sharp Labs of America - Camas, WA since Apr 2012
Executive Vice President & Chief of Advanced Technology Planning
Sharp Labs of America - Camas, WA Jul 2006 - Mar 2012
Chief of Advanced Technology Planning
Sharp Electronics Apr 2001 - Jun 2006
Manager
Sharp Electronics 1997 - 2001
Assistamt Manager
Education:
Columbia University - Fu Foundation School of Engineering and Applied Science 2001 - 2002
Visiting Staff, Material Physics 大阪大学 1980 - 1986
Master, Metallurgy 大阪府立天王寺高等学校 1977 - 1980

Publications

Us Patents

Semiconductor Device, Method Of Fabricating The Same, And Apparatus For Fabricating The Same

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US Patent:
20080237593, Oct 2, 2008
Filed:
Jan 6, 2006
Appl. No.:
11/794874
Inventors:
Junichiro Nakayama - Vancouver WA, US
Ikumi Itsumi - Mie, JP
Tetsuya Inui - Nara, JP
International Classification:
H01L 29/04
H01L 21/00
H01S 3/098
US Classification:
257 52, 438795, 372 19, 257E29003, 257E21001
Abstract:
There is provided a semiconductor device including a substrate and a semiconductor film deposited on the substrate, characterized in that the semiconductor film has a laterally grown crystal having an end with a surface projection height smaller than the thickness of the semiconductor film. There are also provided a semiconductor device fabrication method and apparatus utilizing a method and apparatus for fabricating the semiconductor device, that is capable of reducing a surface projection height or a ridge formed in a last region in repeating laser exposure in the SLS method, and a semiconductor device fabricated thereby.
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Junichiro Nakayama from Camas, WA Get Report