Jung Hyock Yoon

6869899, Mar 22, 2005

Jul 12, 2001

09/902727

Arpan P. Mahorowala - Bronxville NY, US
Maheswaran Surendra - Croton-on-Hudson NY, US
Jung H. Yoon - Poughkeepsie NY, US
Ying Zhang - Yorktown Heights NY, US

International Business Machines Corporation - Armonk NY

H01L021/00

438950, 438949, 438947, 438945

The invention relates generally to lithographic patterning of very small features. In particular, the invention relates generally to patterning of semiconductor circuit features smaller than lithographically defined using either conventional optical lithography or next generation lithography techniques. The invention relates more particularly, but not by way of limitation, to lateral trimming of photoresist images.

7612446, Nov 3, 2009

Nov 22, 2006

11/604152

Hien P. Dang - Nanuet NY, US
Vinod Kamath - Raleigh NC, US
Vijayeshwar D. Khanna - Millwood NY, US
Gerard McVicker - Stormville NY, US
Sri M. Sri-Jayantha - Ossining NY, US
Jung H. Yoon - Poughkeepsie NY, US

International Business Machines Corporation - Armonk NY

H01L 23/34
H05K 7/20
H01L 21/00
F28F 7/00

257707, 257717, 257719, 257720, 257726, 361704, 361710, 361711, 361717, 438123, 165 803, 174 163

A spring-like cooling structure for an in-line chip module is formed from a continuous sheet of a thermally conducting material having a front side and a back side, the sheet folded at substantially a one-hundred and eighty degree angle, wherein a length of the structure substantially correlates to a length of the in-line chip module, and a width of the structure is wider than a width of the in-line chip module such that the structure fits over and substantially around the in-line chip module; openings at a left-side, right-side and a bottom of the structure for easily affixing and removing the structure from the in-line chip module; a top part comprising a top surface disposed over a top of the in-line chip module when affixed to the in-line chip module, and comprising an angled surface flaring outward from the in-line chip module, the angled surface positioned directly beneath the top surface; a center horizontal part; a gap between the center horizontal part and the plurality of chips; and a flared bottom area of the structure.

20010001745, May 24, 2001

Nov 27, 1998

09/200533

JAMES S. IM - NEW YORK NY, US
HYUN JIN SONG - NEW YORK NY, US
ROBERT S. SPOSILI - YONKERS NY, US
JUNG H. YOON - PALISADES PARK NJ, US

H01L021/302

438/747000

Semiconductor integrated devices such as transistors are formed in a film of semiconductor material formed on a substrate. For improved device characteristics, the semiconductor material has regular, quasi-regular or single-crystal structure. Such a structure is made by a technique involving localized irradiation of the film with one or several pulses of a beam of laser radiation, locally to melt the film through its entire thickness. The molten material then solidifies laterally from a seed area of the film. The semiconductor devices can be included as pixel controllers and drivers in liquid-crystal display devices, and in image sensors, static random-access memories (SRAM), silicon-on-insulator (SOI) devices, and three-dimensional integrated circuit devices.