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Jung W Han

from Las Vegas, NV
Age ~43
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Also known as:
Jung Sook Han, Jung S Han, Justin W Han, Justin J Han, Han Myung Jung, Woo Han Jung, Jun Han, Hancock Jd, Jung Whan
Connected to:
Agnes K Han, 69Ahyoung Han, 36Amber J Han, 47Ami Han, 40Andres S Han, 31Angel B Han, 38Anne E Han, 57Antonio Han, 27Ariel S Han, 45Bae C Han, 69

Jung Han Phones & Addresses

  • Las Vegas, NV
  • Los Angeles, CA
  • Irvine, CA
  • West Lafayette, IN
  • New York, NY
  • Arlington Heights, IL
  • Saint Paul, MN

Education

School / High School: Western University of Health Sciences 2011

Professional Records

License Records

Jung Hoon Han

License #:
CC-0003646 - Active
Category:
Accountancy
Issued Date:
Feb 26, 2003
Type:
C.P.A. Certificate

Lawyers & Attorneys

Jung Han Photo 1

Jung Wook Han, Los Angeles CA - Lawyer

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Address:
Morgan, Lewis & Bockius LLP
300 S Grand Ave 22Nd Fl, Los Angeles, CA 90071
(213) 612-7425 (Office), (213) 612-2501 (Fax)
Licenses:
California - Active 2004
Education:
University of California - San Diego
University of Southern California Law School
Specialties:
Real Estate - 100%
Jung Han Photo 2

Jung Han - Lawyer

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Address:
Brinks Korea Ltd.
(269) 060-000x (Office)
Licenses:
New York - Currently registered 1994
Education:
Seoul U U Wash Santa Cl U
Jung Han Photo 3

Jung Han - Lawyer

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Address:
Brinks Korea Limited
(822) 702-1144 (Office)
Licenses:
Dist. of Columbia - Active 1995
Jung Han Photo 4

Jung Han, Los Angeles CA - Lawyer

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Address:
Suite 1240, Los Angeles, CA 90071
Phone:
(213) 312-4000 (Phone), (213) 312-4001 (Fax)
Work:
Kutak Rock LLP, Associate
Specialties:
Business Law
Personal Injury
Products Liability
Commercial Litigation
Corporate Litigation
General Civil
Litigation Commercial
Litigation General Civil
Product Liability Defense
Wrongful Death Litigation
Links:
Website
Jung Han Photo 5

Jung Han, Los Angeles CA - Lawyer

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Address:
10250 Constellation Blvd, Los Angeles, CA 90067
Phone:
(310) 788-5121 (Phone), (310) 286-0992 (Fax)
Work:
Goodwin Procter LLP, Associate
Experience:
20 years
Specialties:
Business Law
Real Estate Law
Public Finance
Real Estate
Jurisdiction:
California (2004)
California
Mr. Han is admitted to practice in California.
Law School:
University of Southern California Law School
Education:
University of Southern California Law School, JD
University of California, BA
Memberships:
California State Bar (2004)
Links:
Website

Medicine Doctors

Jung Han Photo 6

Dr. Jung H Han - DO (Doctor of Osteopathic Medicine)

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Hospitals:
1000 W Carson St, Torrance, CA 90502

1403 Lomita Blvd Suite 200, Harbor City, CA 90710
Education:
Medical Schools
Western University of Health Sciences
Graduated: 2011
Jung Han Photo 7

Jung H. Han

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Specialties:
Anesthesiology
Work:
Weill Cornell PhysiciansNew York Weill Cornell Medical Center Anesthesia
525 E 68 St STE M324, New York, NY 10065
(212) 746-2959 (phone), (212) 746-8563 (fax)

Weill Cornell Medical College Anesthesiology
525 E 68 St STE A1014, New York, NY 10065
(212) 746-5454 (phone), (212) 746-8563 (fax)
Languages:
English
Description:
Dr. Han works in New York, NY and 1 other location and specializes in Anesthesiology. Dr. Han is affiliated with New York Presbyterian Hospital Weill Cornell Medical Center and New York Presbyterian Westchester Division.
Jung Han Photo 8

Jung Hee J. Han

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Specialties:
Anesthesiology
Work:
Weill Cornell Medical Center Pathology
525 E 68 St STE F715, New York, NY 10065
(212) 746-2041 (phone), (212) 746-8855 (fax)
Languages:
English
Description:
Dr. Han works in New York, NY and specializes in Anesthesiology. Dr. Han is affiliated with New York Presbyterian Westchester Division.
Jung Han Photo 9

Jung A Han

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Specialties:
Internal Medicine
Education:
Chung-Ang University, College Of Medicine, Seoul, So Korea (1997)
Jung Han Photo 10

Jung Hee June Han

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Specialties:
Anesthesiology
Education:
State University of New York Downstate (2000)

Business Records

Name / Title
Company / Classification
Phones & Addresses
Jung Han
Owner
California Mondi
Ret Women's Clothing
928 S Western Ave, Los Angeles, CA 90006
(213) 380-0987
Jung Han
Owner
Lawson Cleaning Service
Building Maintenance Services
92 Corporate Park, Irvine, CA 92606
Jung June Han
President
Light Shining Academy.Inc
4940 Irvine Blvd, Irvine, CA 92620
Jung Han
President
Hans Swimming Pool
Business Services
1121 Newcastle Ln, Fullerton, CA 92833
Jung Soo Han
President
Jins Apparel, Inc
Ret Women's Clothing
2111 W Cres Ave, Anaheim, CA 92801
1555 W Redondo Bch Blvd, Gardena, CA 90247
2115 W Cres Ave, Anaheim, CA 92801
Jung H. Han
President
David & Ellen Ross Scholarship Foundation
1025 Stanford Ave, Los Angeles, CA 90021
Jung Nam Han
President
Gaudium Corp
Business Services at Non-Commercial Site · Nonclassifiable Establishments
28427 Hazelridge Dr, Palos Verdes Estates, CA 90275
689 S Berendo St, Los Angeles, CA 90005
Jung Han
Owner
Lake Cleaners
Drycleaning Plant
27772 Vis Del Lago, San Juan Capistrano, CA 92692
(949) 770-8606

Publications

Wikipedia References

Jung Han Photo 11

Jung Han

Isbn (Books And Publications)

Advanced Leds for Solid State Lighting

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Author

Jung Han

ISBN #

0819464503

Innovations In Food Packaging

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Author

Jung H. Han

ISBN #

0123116325

Us Patents

Jitter Clean-Up Circuit For Communications Applications

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US Patent:
20020130725, Sep 19, 2002
Filed:
Aug 31, 2001
Appl. No.:
09/945162
Inventors:
Jung Han - Tustin CA, US
International Classification:
H03B001/00
US Classification:
331/046000
Abstract:
In accordance with an exemplary embodiment of the present invention, an optical subassembly includes a clock-jitter clean-up circuit. The clock-jitter clean-up circuit is adapted to receive reference clock signals having a plurality of reference clock frequencies, and is adapted to output a transmit reference clock signal having one of the reference clock frequencies. The transmitted reference clock frequency is substantially jitter-free.

Hat With An Improved Sweat Band

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US Patent:
20030097705, May 29, 2003
Filed:
Nov 27, 2001
Appl. No.:
09/999245
Inventors:
Jung Han - Los Angeles CA, US
International Classification:
A42B001/00
US Classification:
002/171000
Abstract:
A hat is provided having a crown member made of stretchable uniform fabric material and a sweat band connected along the lower edge of the interior surface of the crown member. The sweat band is formed of a single sheet of fabric material wrapped over a single sheet of padding material. The single sheet of fabric material does not completely enclose the sheet of padding material, and a portion of the sheet of padding material must be exposed along the circumference of the sweat band.

Cap Having Sweat Band

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US Patent:
20030172438, Sep 18, 2003
Filed:
Feb 14, 2003
Appl. No.:
10/367382
Inventors:
Jung Han - Los Angeles CA, US
Kyoung Lim - Koyang Si, KR
International Classification:
A42B001/00
US Classification:
002/181000
Abstract:
A cap comprising a cap body having an elastic fabric patch provided in rear thereof, a visor extending from a front side of the cap body, and a sweat band provided along an inner lower periphery of the cap body having latex material. The sweat band includes a latex material and a fabric cloth covering an outer surface of the latex material between the inner lower periphery of the cap body and the latex material.

Group Ii-Vi Compound Semiconductor Light Emitting Devices And An Ohmic Contact Therefor

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US Patent:
56104138, Mar 11, 1997
Filed:
Jun 7, 1995
Appl. No.:
8/484088
Inventors:
Yongping Fan - West Lafayette IN
Jung Han - West Lafayette IN
Arto V. Nurmikko - Providence RI
Robert L. Gunshor - West Lafayette IN
Li He - West Lafayette IN
Assignee:
Research Corporation Technologies, Inc. - Tucson AZ
International Classification:
H01L 3300
US Classification:
257 97
Abstract:
Group II-VI compound semiconductor light emitting devices which include at least one II-VI quantum well region of a well layer disposed between first and second barrier layers is disclosed. The quantum well region is sandwiched between first and second cladding layers of a II-VI semiconductor material. The first cladding layer is formed on and lattice matched to the first barrier layer and to a substrate of a III-V compound semiconductor material. The second cladding layer is lattice matched to the second barrier layer. The quantum well layer comprises a II-VI compound semiconductor material having the formula A. sub. x B. sub. (1-x) C wherein A and B are two different elements from Group II and C is at least one element from Group VI. When the second cladding layer has a p-type conductivity, a graded bandgap ohmic contact according to the present invention can be utilized. The graded bandgap contact can be a single continuously graded II-VI p-type region or a plurality of cells with each of the cells having first and second thin layers of first and second p-type II-VI semiconductor materials respectively.

Group Ii-Vi Compound Semiconductor Light Emitting Devices And An Ohmic Contact Therefor

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US Patent:
55481370, Aug 20, 1996
Filed:
Mar 7, 1994
Appl. No.:
8/207327
Inventors:
Yongping Fan - West Lafayette IN
Jung Han - West Lafayette IN
Robert L. Gunshor - West Lafayette IN
Li He - West Lafayette IN
Assignee:
Research Corporation Technologies, Inc. - Tucson AZ
International Classification:
H01L 310328
H01L 310336
H01L 31072
H01L 31109
US Classification:
257191
Abstract:
Group II-VI compound semiconductor light emitting devices which include at least one II-VI quantum well region of a well layer disposed between first and second barrier layers is disclosed. The quantum well region is sandwiched between first and second cladding layers of a II-VI semiconductor material. The first cladding layer is formed on and lattice matched to the first barrier layer and to a substrate of a III-V compound semiconductor material. The second cladding layer is lattice matched to the second barrier layer. The quantum well layer comprises a II-VI compound semiconductor material having the formula A. sub. x B. sub. (1-x) C wherein A and B are two different elements from Group II and C is at least one element from Group VI. When the second cladding layer has a p-type conductivity, a graded bandgap ohmic contact according to the present invention can be utilized. The graded bandgap contact can be a single continuously graded II-VI p-type region or a plurality of cells with each of the cells having first and second thin layers of first and second p-type II-VI semiconductor materials respectively.
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Jung W Han from Las Vegas, NV, age ~43 Get Report