Search

John W Sherohman

from Livermore, CA
Age ~78
Get Report
Also known as:
John William Sherohman, John Te Sherohman
Phone and address:
5379 Celeste Ave, Livermore, CA 94550
(925) 449-0761
Related to:
C SherohmanChristyann L Sherohman, 31Barbara A Sherohman, 70
Connected to:
Kathleen A Sherohman, 67Jennifer M Sheroian, 46David A Sheron, 33Kevin S Sheron, 52Linda L Sherony, 64Michael Sherony, 42Rini Sherony, 54Haley Sheroski, 39Renee M Sheroski, 65Glenda Sherouse, 61

John Sherohman Phones & Addresses

  • 5379 Celeste Ave, Livermore, CA 94550 (925) 449-0761
  • Pleasanton, CA
  • South Lake Tahoe, CA
  • Lahaina, HI

Business Records

Name / Title
Company / Classification
Phones & Addresses
John William Sherohman
President
Crystal Alsb Technology Inc
Crystal Growth
5379 Celeste Ave, Livermore, CA 94550
(925) 449-0761
John William Sherohman
President
ALSB CRYSTAL TECHNOLOGY, INC
5379 Celeste Ave, Livermore, CA 94550

Publications

Us Patents

Design And Fabrication Of 6.1-Å Family Semiconductor Devices Using Semi-Insulating A1Sb Substrate

View page
US Patent:
7224041, May 29, 2007
Filed:
May 28, 2004
Appl. No.:
10/856175
Inventors:
John W. Sherohman - Livermore CA, US
Jick Hong Yee - Livermore CA, US
Kuang Jen J. Wu - Cupertino CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 29/12
H01L 31/0328
US Classification:
257613, 257 22, 257190, 257201
Abstract:
For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6. 1-Å family heterostructure devices.

High Resistivity Aluminum Antimonide Radiation Detector

View page
US Patent:
7309393, Dec 18, 2007
Filed:
Jan 21, 2005
Appl. No.:
11/040573
Inventors:
John W. Sherohman - Livermore CA, US
Jick H. Yee - Livermore CA, US
Assignee:
Lawrence Livermore National Security, LLC - Livermore CA
International Classification:
C30B 15/20
US Classification:
117 13, 117 15, 117 19
Abstract:
Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.

Thermal Oxidation Of Single Crystal Aluminum Antimonide And Materials Having The Same

View page
US Patent:
8338916, Dec 25, 2012
Filed:
Dec 22, 2010
Appl. No.:
12/976994
Inventors:
John William Sherohman - Livermore CA, US
Jick Hong Yee - Livermore CA, US
Kuang Jen J. Wu - Cupertino CA, US
Assignee:
Lawrence Livermore National Security, LLC - Livermore CA
International Classification:
H01L 29/20
US Classification:
257615, 257E29089
Abstract:
In one embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a partial vacuum atmosphere at a temperature conducive for air adsorbed molecules to desorb, surface molecule groups to decompose, and elemental Sb to evaporate from a surface of the AlSb crystal and exposing the AlSb crystal to an atmosphere comprising oxygen to form a crystalline oxide layer on the surface of the AlSb crystal. In another embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a non-oxidizing atmosphere at a temperature conducive for decomposition of an amorphous oxidized surface layer and evaporation of elemental Sb from the AlSb crystal surface and forming stable oxides of Al and Sb from residual surface oxygen to form a crystalline oxide layer on the surface of the AlSb crystal.

High Resistivity Aluminum Antimonide Radiation Detector

View page
US Patent:
20040061063, Apr 1, 2004
Filed:
Sep 30, 2002
Appl. No.:
10/260141
Inventors:
John Sherohman - Livermore CA, US
Arthur Coombs - Patterson CA, US
Jick Yee - Livermore CA, US
Assignee:
The Regents of the University of California
International Classification:
G01T001/24
US Classification:
250/370120, 117/013000, 117/206000
Abstract:
Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.

High Resistivity Aluminum Antimonide Radiation And Alpha-Particle Detector

View page
US Patent:
20050098096, May 12, 2005
Filed:
Nov 23, 2004
Appl. No.:
10/997553
Inventors:
John Sherohman - Livermore CA, US
Arthur Coombs - Patterson CA, US
Jick Yee - Livermore CA, US
Kuang Wu - Cupertino CA, US
International Classification:
C30B001/00
US Classification:
117201000
Abstract:
Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation and alpha-particle detection.

Development Of An Electronic Device Quality Aluminum Antimonide (Aisb) Semiconductor For Solar Cell Applications

View page
US Patent:
20070137700, Jun 21, 2007
Filed:
Dec 16, 2005
Appl. No.:
11/305381
Inventors:
John Sherohman - Livermore CA, US
Jick Yee - Livermore CA, US
Arthur Coombs - Patterson CA, US
International Classification:
H01L 31/00
US Classification:
136262000, 136265000
Abstract:
For the first time, electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

Development Of An Electronic Device Quality Aluminum Antimonide (Alsb) Semiconductor For Solar Cell Applications

View page
US Patent:
20120058595, Mar 8, 2012
Filed:
Oct 24, 2011
Appl. No.:
13/280164
Inventors:
John W. Sherohman - Livermore CA, US
Jick Hong Yee - Livermore CA, US
International Classification:
H01L 31/18
US Classification:
438 94, 257E31033
Abstract:
Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.
Control profile
John W Sherohman from Livermore, CA, age ~78 Get Report