John B Pardee

20040027749, Feb 12, 2004

May 13, 2003

10/416611

Joseph Zuercher - Brookfield WI, US
Jerome Hastings - Sussex WI, US
Engelbert Hetzmannseder - Milwaukee WI, US
John Pardee - Franklin WI, US
Charles Tennies - Waukesha WI, US

H02H003/00

361/062000

Arcing faults in dc electric power systems are detected by apparatus which responds to a predetermined drop either in voltage across, or current drawn by, a dc load. The voltage and current drops can be measured values or scaled to the source voltage. In another arrangement, the load current is interrupted momentarily when a step decrease in current is detected. If the dc current does not return, within a predetermined margin, to the decreased value before interruption, arcing is indicated. In a third embodiment, drift of the load current following detection of a step decrease, either upward toward a short or downward toward an open circuit, is taken as an indication of arcing.

46700633, Jun 2, 1987

Apr 10, 1985

6/721553

Steven R. Schachameyer - Whitefish Bay WI
James A. Benjamin - Waukesha WI
John B. Pardee - Milwaukee WI
Lyle O. Hoppie - Birmingham MI

Eaton Corporation - Cleveland OH

H01L 21265
B05D 512

148 15

A semiconductor processing technique is disclosed for periodically selectively effecting lattice ordering and dopant distribution during a semiconductor layer formation process. Excimer pulsed ultraviolet laser radiation is provided at different energy fluxes to provide an electrically active layer as formed, without post-annealing, and curing lattice damage otherwise due to certain processing methods such as ion implantation. In a photolytic deposition technique, excimer laser radiation is periodically increased to transiently provide a pyrolytic thermal reaction in the layer as thus far deposited to provide a plurality of short intermittent periodic annealing steps to ensure crystallization as the layer continues to be deposited at lower radiation energy fluxes. Single crystalline material may be formed without post-annealing by periodically irradiating incremental thicknesses of the layer as formed.

52728927, Dec 28, 1993

Jul 24, 1991

7/735239

William J. Janutka - West Allis WI
Richard G. Bernhard - Germantown WI
Michael L. Smith - Milwaukee WI
Joseph C. Zuercher - Brookfield WI
John B. Pardee - Franklin WI
Ronald R. Jahn - Cedarburg WI
William J. Walsh - Naperville IL
James M. Pick - Elk Grove IL
Scott A. Reid - Brookfield WI

Eaton Corporation - Cleveland OH

D06F 3302

68 1202

A control system for a washing machine having a transducer mounted on the exterior of the washing receptacle wall and operable to generate acoustic vibrations in the receptacle wall during fluid filling of the receptacle. A receiver detects sound waves within the receptacle generated by the wall vibrations and generates in fill signal indicative of the sound waves. Circuitry is provided for analyzing the fill signal and determining from the acoustic signature of the fill signal the occurrence of total immersion of articles in the fluid; and, the circuitry sends a signal which is operable to then shut off the fluid fill valve.

46700641, Jun 2, 1987

Apr 10, 1985

6/721551

Steven R. Schachameyer - Whitefish Bay WI
James A. Benjamin - Waukesha WI
John B. Pardee - Milwaukee WI
Lyle O. Hoppie - Birmingham MI

Eaton Corporation - Cleveland OH

H01L 21265
B01J 110

148 15

A semiconductor ion implantation processing technique is disclosed for implanting high purity, high flux density ions in a semiconductor wafer substrate. A reactant gas is irradiated with excimer pulsed ultraviolet laser radiation at a discrete designated pulsed wavelength corresponding to a discrete designated ionization excitation energy of the gas photochemically breaking bonds of the gas to nonthermally photolytically ionize the gas. The ions are then accelerated by an electric field for subsequent implantation into a surface.

46859764, Aug 11, 1987

May 22, 1985

6/736934

Steven R. Schachameyer - Whitefish Bay WI
James A. Benjamin - Waukesha WI
John B. Pardee - Milwaukee WI
Lyle O. Hoppie - Birmingham MI

Eaton Corporation - Cleveland OH

H01L 21265
B05D 512

437173

A semiconductor processing technique is disclosed for forming a multi-layered semiconductor structure in a single chamber and with the same equipment, without removing the semiconductor wafer substrate or otherwise transferring it to another chamber. A gaseous mixture of different gases is provided in a chamber. Excimer pulsed ultraviolet laser radiation is introduced into the chamber at a first discrete wavelength to photolytically react with a first of the gases at a discrete excitation energy photochemically breaking bonds of the first gas to epitaxially deposit a first layer on the substrate, followed by radiation at a second discrete wavelength to photolytically react with a second gas to deposit a second layer on the first layer, and so on. The different gases may be introduced into the chamber collectively, or serially between radiations. Scavenging between layers is provided by photolytic removal of surface containments and the products of reaction.

46616799, Apr 28, 1987

Jun 28, 1985

6/750406

John B. Pardee - Milwaukee WI

Eaton Corporation - Cleveland OH

B23K 2600

219121L

A semiconductor processing technique is provided for reacting with the surface (2) of a semiconductor wafer substrate (4) only along a predetermined pattern without a pass-through mask. Excimer pulsed ultraviolet laser radiation (32) is reflected by a mirror (10) having a selective pattern (12) thereon to direct laser radiation only along a predetermined pattern onto the substrate surface (2) as determined by the selective mirror pattern (12), to selectively activate designated areas of the substrate (4). There is further provided a method for forming a predetermined pattern on a cylindrical target (76) by directing excimer pulsed ultraviolet laser radiation (74) along the conical axis of a conical mirror (72) having a selective pattern thereon.

46558497, Apr 7, 1987

May 22, 1985

6/737223

Steven R. Schachameyer - Whitefish Bay WI
James A. Benjamin - Waukesha WI
John B. Pardee - Milwaukee WI
Lyle O. Hoppie - Birmingham MI

Eaton Corporation - Cleveland OH

H01L 21265
B05D 512

148 15

A semiconductor processing technique is disclosed for reasonantly reacting with a semiconductor wafer substrate and cleaving surface atomic bonds to create dangling bonds. The substrate is irradiated with excimer pulsed ultraviolet laser radiation at a discrete designed wavelength to resonantly photolytically cleave surface bonds and create the dangling bonds. This enhances further processing operations such as single crystalline silicon deposition and enhanced bonding and growth thereof.

46683046, May 26, 1987

Apr 10, 1985

6/721552

Steven R. Schachameyer - Whitefish Bay WI
James A. Benjamin - Waukesha WI
John B. Pardee - Milwaukee WI
Lyle O. Hoppie - Birmingham MI
Herman P. Schutten - Milwaukee WI

Eaton Corporation - Cleveland OH

H01L 21265

148 15

A dopant gettering semiconductor processing technique is disclosed for selectively activating an otherwise benign reactant to remove dopant from a semiconductor wafer substrate. Excimer pulsed ultraviolet laser radiation is provided at a discrete designated pulsed wavelength corresponding to a discrete designated gettering excitation energy of the otherwise benign reactant photochemically breaking bonds of the reactant such that the reactant is photolytically activated to remove dopant from the substrate, without thermally driven pyrolytic reaction. The bonds of a reactant gas are photochemically broken to produce gettering agents reacting with the substrate to remove dopant by forming a gaseous compound liberated from the substrate and benign to and unactivated by the discrete designated wavelength of the excimer pulsed ultraviolet laser radiation.