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John Meaux Phones & Addresses

  • 510 Gene Autry Ln, Plano, TX 75094
  • Murphy, TX
  • 10704 Bayridge Cv, Austin, TX 78759 (512) 335-5548
  • Abbeville, LA
  • Kaplan, LA
  • Georgetown, TX
  • Salt Lake City, UT

Resumes

Resumes

John Meaux Photo 1

Process Development Engineer

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Location:
Austin, TX
Industry:
Semiconductors
Work:
Novati Technologies - Austin, Texas Area since Jul 2009
Principal Lithography Engineer

Cypress Semiconductor Feb 1987 - Jan 2009
Staff Engineer

Advanced Micro Devices Jan 1985 - Feb 1987
Process Engineer
Education:
The University of Texas at Austin 1986 - 1993
MS, Chemical Engineering
University of Colorado Boulder 1980 - 1984
BS, Chemical Engineering
Skills:
Cypress
Development
Semiconductors
Lithography
John Meaux Photo 2

Part Department

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Location:
Austin, TX
Industry:
Automotive
Work:
Kinsel Ford Lincoln Mazda Mitsubishi
Part Department

Kinsel Ford Lincoln Mazda Mitsubishi
Parts Specialist

Philpott Ford
Parts Specialist
Skills:
Retail
Wholesale
Customer Service
Teamwork
Certifications:
Parts Specialist - Automobile Parts Specialist (Ps-Apsp2)
John Meaux Photo 3

John Meaux

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John Meaux Photo 4

John Meaux

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Publications

Us Patents

Pattern Forming And Transferring Processes

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US Patent:
51789892, Jan 12, 1993
Filed:
Jul 21, 1989
Appl. No.:
7/384705
Inventors:
Adam Heller - Austin TX
Joseph C. Carls - Austin TX
Panagiotis Argitis - Austin TX
John J. Meaux - Austin TX
Assignee:
Board of Regents, The University of Texas System
International Classification:
G03F 900
G03C 500
US Classification:
430323
Abstract:
Pattern forming and transferring processes using radiation sensitive materials based upon mixtures of polyoxometalates and organic compounds. The processes involve establishing a layer of such radiation sensitve material on one or more layers of underlying materials. A pattern is formed in the layer of radiation sensitive material by exposing selected areas of the layer to radiation. The pattern may then be transferred into the underlying layers of material. Methods for developing patterns in layers of radiation sensitive materials, so as to hinder leaching of etch resistant substances included in the radiation sensitive materials, are also provided.
John J Meaux from Murphy, TX, age ~61 Get Report