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John M Cotte

from New Fairfield, CT
Age ~62
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Also known as:
John Michael Cotte, John C Cotte, John R Cotte
Phone and address:
6 Cloverleaf Dr, Danbury, CT 06812
(203) 746-1598
Related to:
Kimberly A Guinta, 67
Connected to:
Angel F Cotte, 82Delila Cotte, 62George J Cotte, 87Angela E Cottee, 29Paul D Cottee, 63Ross M Cottee, 74Jonathan M Cotteen, 38Jennifer M Cotteleer, 53Anne O Cottell, 86George E Cottell, 79

John Cotte Phones & Addresses

  • 6 Cloverleaf Dr, New Fairfield, CT 06812 (203) 746-1598
  • Port Chester, NY
  • Brooklyn, NY
  • Desert Hot Springs, CA
  • New Rochelle, NY
  • Westchester, NY
  • 6 Cloverleaf Dr, New Fairfield, CT 06812 (914) 672-0407

Education

Degree: Associate degree or higher

Emails

j***[email protected]

Resumes

Resumes

John Cotte Photo 1

Senior Engineer And Scientist

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Location:
New Fairfield, CT
Work:
Ibm
Senior Engineer and Scientist
John Cotte Photo 2

John Cotte

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Business Records

Name / Title
Company / Classification
Phones & Addresses
John R. Cotte
STUDIO JAE HAIR DESIGN, INC
581 E Boston Post Rd, Mamaroneck, NY 10543
123 Grace Church St, Port Chester, NY 10573

Publications

Us Patents

Method For Selective Extraction Of Sacrificial Place-Holding Material Used In Fabrication Of Air Gap-Containing Interconnect Structures

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US Patent:
6346484, Feb 12, 2002
Filed:
Aug 31, 2000
Appl. No.:
09/651843
Inventors:
John Michael Cotte - New Fairfield CT
Christopher Vincent Jahnes - Upper Saddle River NJ
Kenneth John McCullough - Fishkill NY
Wayne Martin Moreau - Wappinger NY
Satyanarayana Venkata Nitta - Fishkill NY
Katherine Lynn Saenger - Ossinger NY
John Patrick Simons - Wappingers Falls NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01C 21302
US Classification:
438725, 438623
Abstract:
The present invention relates to formation of air gaps in metal/insulator interconnect structures, and to the use of supercritical fluid (SCF)-based methods to extract sacrificial place-holding materials to form air gaps in a structure. Supercritical fluids have gas-like diffusivities and viscosities, and very low or zero surface tension, so SCFs can penetrate small access holes and/or pores in a perforated or porous bridge layer to reach the sacrificial material. Examples of SCFs include CO (with or without cosolvents or additives) and ethylene (with or without cosolvents or additives). In a more general embodiment, SCF-based methods for forming at least partially enclosed air gaps in structures that are not interconnect structures are disclosed.

Process Of Drying Semiconductor Wafers Using Liquid Or Supercritical Carbon Dioxide

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US Patent:
6398875, Jun 4, 2002
Filed:
Jun 27, 2001
Appl. No.:
09/893231
Inventors:
John Michael Cotte - New Fairfield CT
Dario L. Goldfarb - Putnam Valley NY
Kenneth John McCullough - Fishkill NY
Wayne Martin Moreau - Wappinger NY
Keith R. Pope - Danbury CT
John P. Simons - Wappingers Falls NY
Charles J. Taft - Wappingers Falls NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B08B 304
US Classification:
134 2, 134 3, 134 10, 134 11, 134 31, 134 34, 134 36, 134 37, 134 41, 134902, 34448, 34467, 34468, 34469, 34470, 34516, 34517
Abstract:
A process of drying a semiconductor wafer which includes at least one microelectric structure disposed thereon which includes contacting a water-containing thin film-covered semiconductor wafer with a composition which includes liquid or supercritical carbon dioxide and a surfactant.

Process For Removing Chemical Mechanical Polishing Residual Slurry

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US Patent:
6425956, Jul 30, 2002
Filed:
Jan 5, 2001
Appl. No.:
09/755267
Inventors:
John Michael Cotte - New Fairfield CT
Donald J. Delehanty - Wappingers Falls NY
Kenneth John McCullough - Fishkill NY
Wayne Martin Moreau - Wappinger NY
John P. Simons - Wappingers Falls NY
Charles J. Taft - Wappingers Falls NY
Richard P. Volant - New Fairfield CT
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
C23G 102
US Classification:
134 3, 134 2, 134 2219, 134 36, 134 41, 134 42, 134902, 438690, 438691, 438692, 438693
Abstract:
A process of removing residual slurry resulting from chemical mechanical polishing of a workpiece in which the workpiece is contacted with a composition of a supercritical fluid, said supercritical fluid including supercritical, carbon dioxide and a co-solvent, and a surfactant.

Method For Forming Interconnects On Semiconductor Substrates And Structures Formed

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US Patent:
6429523, Aug 6, 2002
Filed:
Jan 4, 2001
Appl. No.:
09/755899
Inventors:
Panayotis Constantinou Andricacos - Croton-on-Hudson NY
Cyril Cabral, Jr. - Ossining NY
John Michael Cotte - New Fairfield CT
Lynne Gignac - Beacon NY
Wilma Jean Horkans - Ossining NY
Kenneth Parker Rodbell - Sandy Hook CT
Assignee:
International Business Machines Corp. - Armonk NY
International Classification:
H01L 2348
US Classification:
257758, 257751, 257762, 438622
Abstract:
A method for forming metal interconnect in a semiconductor structure and the structure formed are disclosed. In the method, a seed layer of a first metal is first deposited into an interconnect opening wherein the seed layer has an average grain size of at least 0. 0005 m. The semiconductor structure is then annealed at a temperature sufficient to grow the average grain size in the seed layer to at least the film thickness. A filler layer of a second metal is then deposited to fill the interconnect opening overlaying the seed layer such that the filler layer has an average grain size of larger than 0. 0005 m and comparable to the annealed seed layer.

Process For Depositing A Film On A Nanometer Structure

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US Patent:
6451375, Sep 17, 2002
Filed:
Jan 5, 2001
Appl. No.:
09/755266
Inventors:
John Michael Cotte - New Fairfield CT
Kenneth John McCullough - Fishkill NY
Wayne Martin Moreau - Wappinger NY
John P. Simons - Wappingers Falls NY
Charles J. Taft - Wappingers Falls NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B05D 512
US Classification:
427 58, 427123, 4271261, 427377, 427405, 4274431, 438678
Abstract:
A process of depositing a thin film on a nanometer structure in which a coating, which may be an aerogel material or metallic seed layer, is prepared. The coating is combined with a supercritical composition to form a supercritical coating composition. The supercritical coating composition is deposited upon a nanometer structure under supercritical conditions. Supercritical conditions are removed whereby the supercritical composition is removed and the coating solidifies into a thin solid film.

Process Of Cleaning Semiconductor Processing, Handling And Manufacturing Equipment

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US Patent:
6454869, Sep 24, 2002
Filed:
Jun 27, 2001
Appl. No.:
09/893206
Inventors:
John Michael Cotte - New Fairfield CT
Dario L. Goldfarb - Putnam Valley NY
Kenneth John McCullough - Fishkill NY
Wayne Martin Moreau - Wappinger NY
Keith R. Pope - Danbury CT
John P. Simons - Wappingers Falls NY
Charles J. Taft - Wappingers Falls NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B08B 304
US Classification:
134 2, 134 36, 134 34, 134 2219, 134 42, 134902
Abstract:
A process of cleaning semiconductor processing, handling and manufacturing equipment in which such equipment is contacted with a cleaning effective amount of liquid or supercritical carbon dioxide.

Process And Apparatus For Cleaning Filters

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US Patent:
6457480, Oct 1, 2002
Filed:
Jun 27, 2001
Appl. No.:
09/893208
Inventors:
John Michael Cotte - New Fairfield CT
Kenneth John McCullough - Fishkill NY
Wayne Martin Moreau - Wappinger NY
Keith R. Pope - Danbury CT
John P. Simons - Wappingers Falls NY
Charles J. Taft - Wappingers Falls NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B08B 900
US Classification:
134 221, 134 19, 134 2218, 134 2219, 134 34, 134 36, 134 42
Abstract:
A process and apparatus for cleaning filters prior to recycling or disposal. In this process and apparatus liquid or supercritical carbon dioxide contacts the plugged pores of a filter under conditions in which carbon dioxide remains in the liquid or supercritical state.

Electrochemical Etch For High Tin Solder Bumps

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US Patent:
6468413, Oct 22, 2002
Filed:
Oct 26, 2000
Appl. No.:
09/697333
Inventors:
Lisa A. Fanti - Hopewell Junction NY
John Michael Cotte - New Fairfield CT
David Ely Eichstadt - Wappingers Falls NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
C25F 302
US Classification:
205682, 205684
Abstract:
An aqueous electrochemical etchant for etching metals in the presence of one or more metals not to be etched, the etchant including glycerol in the concentration range of 1. 30 to 1. 70 M, a sulfate compound having a sulfate ion concentration in the range of 0 to 0. 5 M, and a phosphate compound having a phosphate ion concentration in the range of 0. 1 to 0. 5 M.
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John M Cotte from New Fairfield, CT, age ~62 Get Report