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Jin K Song

from Downey, CA
Age ~60
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Also known as:
Jin K Kyong, Jin K Songkyong
Related to:
Myung H Song, 54Yongsong K JinSean Song
Connected to:
Aeda H Song, 72Agatha Song, 89Aitong Song, 36Andi J Song, 49Andre Song, 40Anna Song, 42Baogang Song, 54Baozhen Song, 47Beatrice P Song, 64Bianca Song, 40

Jin Song Phones & Addresses

  • Downey, CA
  • Los Angeles, CA

Professional Records

License Records

Jin Wha Song

License #:
PIC.021531 - Active
Issued Date:
Apr 19, 2016
Expiration Date:
Dec 31, 2017
Type:
Pharmacist-in-Charge (V)

Jin Wha Song

License #:
PST.021531 - Active
Issued Date:
Apr 19, 2016
Expiration Date:
Dec 31, 2017
Type:
Pharmacist

Jin Wha Song Pharmd

License #:
15134 - Active
Category:
Pharmacy
Issued Date:
Nov 20, 2015
Effective Date:
Nov 20, 2015
Expiration Date:
Jan 1, 2018
Type:
Pharmacist

Real Estate Brokers

Jin Song Photo 1

Jin Song, Torrance CA Agent

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Work:
ERA
Torrance, CA
(310) 891-0007 (Phone)

Medicine Doctors

Jin Song Photo 2

Jin Oh Song, Los Angeles CA - LAC

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Specialties:
Acupuncture
Address:
500 S Berendo St Suite 402, Los Angeles, CA 90020
Languages:
English
Jin Song Photo 3

Jin H. Song

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Specialties:
Cardiovascular Disease
Work:
Olean Medical Group
535 Main St STE 1, Olean, NY 14760
(716) 372-0141 (phone), (716) 376-2329 (fax)
Education:
Medical School
Ewha Women's Univ, Coll of Med, Seoul, So Korea
Graduated: 2003
Procedures:
Cardioversion
Echocardiogram
Languages:
English
Description:
Dr. Song graduated from the Ewha Women's Univ, Coll of Med, Seoul, So Korea in 2003. She works in Olean, NY and specializes in Cardiovascular Disease. Dr. Song is affiliated with Olean General Hospital.

Resumes

Resumes

Jin Song Photo 4

Jin Song Wildomar, CA

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Work:
Mongolian BBQ
Riverside, CA
Sep 2009 to Jun 2013
Manager
St. Andrew Kim Sunday school
Norco, CA
Sep 2005 to Jun 2011
Teacher
Taekwondo Academy, Corona
Semi Valley, CALIFORNIA, US
Dec 2004 to Mar 2011
Instructor
Black Belt Academy
Huntington Beach, CA
Jul 2003 to Jun 2010
Master Instructor/ program manager and marketer
Korea Taekwondo Consulting
Seoul, Korea
Mar 2007 to Sep 2007
Program Director & Interpreter
Education:
University of California
Riverside, CA
2011 to 2013
B.A. in Business Administration
Korea National Sports University
Seoul, KR
2007 to 2007
Taekwondo
Skills:
Marketing Execuive

Business Records

Name / Title
Company / Classification
Phones & Addresses
Jin Song
Manager
Clafoutis
Eating Places
1509 South Robertson Boulevard, Los Angeles, CA
Jin W Song
The Real Estate Group
Real Estate Agents and Managers
3480 Torrance Blvd Ste 100, Torrance, CA 90503
Jin Hwa Song
President
R2 Apparel, Inc
9465 Gdn Grv Blvd, Garden Grove, CA 92844
19 Bancroft St, San Juan Capistrano, CA 92694
Jin Young Song
President
Kosma Tex
2720 S Hl St, Los Angeles, CA 90007
828 E 29 St, Los Angeles, CA 90011
Jin A. Song
President
Lime Mode, Inc
Lime · Mfg Lime Products
830 S Hl St, Los Angeles, CA 90014
Jin Song
Owner
Daddy Bobs Spirite Shoppe
Ret Alcoholic Beverages
545 W Whittier Blvd, La Habra, CA 90631
(562) 697-4475
Jin Young Song
President
SO. COOL, INC
Nonclassifiable Establishments · Business Services
2040 Hawkins Cir, Los Angeles, CA 90001
1050 Stanford Ave, Los Angeles, CA 90021
(323) 588-4212
Jin Joo Song
President
ZN TECHNOLOGY, INC
910 Columbia St, Brea, CA 92821
Jin Song
Manager
Clafoutis
Eating Places
1509 South Robertson Boulevard, Los Angeles, CA
Jin W Song
The Real Estate Group
Real Estate Agents and Managers
3480 Torrance Blvd Ste 100, Torrance, CA 90503

Publications

Us Patents

Vertically Structured Led By Integrating Nitride Semiconductors With Zn(Mg,Cd,Be)O(S,Se) And Method For Making Same

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US Patent:
8642369, Feb 4, 2014
Filed:
Mar 3, 2009
Appl. No.:
12/397224
Inventors:
Jizhi Zhang - Arcadia CA, US
Jin Joo Song - Brea CA, US
Assignee:
ZN Technology, Inc. - Brea CA
International Classification:
H01L 21/00
US Classification:
438 47, 438104, 257E33064
Abstract:
A light emitting diode (LED) with a vertical structure, including electrical contacts on opposing sides, provides increased brightness. In some embodiments an LED includes a nitride semiconductor light emitting component grown on a sapphire substrate, a Zn(Mg,Cd,Be)O(S,Se) assembly formed on the nitride semiconductor component, and a further Zn(Mg Cd,Be)O(S,Se) assembly bonded on an opposing side of the light emitting component, which is exposed by removing the sapphire substrate. Electrical contacts may be connected to the Zn(Mg,Cd,Be)O(S,Se) assembly and the further Zn(Mg,Cd,Be)O(S,Se) assembly. Herein Zn(Mg,Cd,Be)O(S,Se) is a II-VI semiconductor satisfying a formula ZnMgCdBeOSSe, wherein a=01, b=01, c=01, p=01, and q=01.

Innovative Growth Method To Achieve High Quality Iii-Nitride Layers For Wide Band Gap Optoelectronic And Electronic Devices

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US Patent:
20060160345, Jul 20, 2006
Filed:
Jan 14, 2005
Appl. No.:
11/036081
Inventors:
Xing-Quan Liu - Brea CA, US
Huoping Xin - Brea CA, US
Jin Song - Brea CA, US
Thomas Choo - Brea CA, US
International Classification:
H01L 29/22
H01L 21/28
H01L 31/0296
US Classification:
438604000, 257078000
Abstract:
A method to achieve high quality III-nitride epitaxial layers including AlN, AlGaN, GaN, InGaN, and AlInGaN, by supplying group III precursors constantly and group V precursors periodically with the epitaxial growth systems including metal organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), and molecular beam epitaxy (MBE).

High Efficiency Light Emitting Device

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US Patent:
20070029541, Feb 8, 2007
Filed:
Aug 4, 2005
Appl. No.:
11/196856
Inventors:
Huoping Xin - Brea CA, US
Xingquan Liu - Brea CA, US
Xiaohong Shi - Brea CA, US
Chan Choi - Brea CA, US
Jin Song - Brea CA, US
International Classification:
H01L 31/109
US Classification:
257014000
Abstract:
A highly efficient III-nitride/II-Oxide light emitting device that has a n-tunneling layer, which comprises at least one material selected from a group consisting of n-GaN, n-InGaN, n-AlGaN, n-AlGaInN, n-ZnO, n-ZnCdO, n-ZnMgO, n-ZnMgCdO, that is deposited on top of the p-layer in a LED structure. After that, a top n-layer is deposited above that n-tunneling layer that may be a n-layer and comprises at least one material selected from a group consisting of n-GaN, n-InGaN, n-AlGaN, n-AlGaInN, n-ZnO, n-ZnCdO, n-ZnMgO, n-ZnMgCdO or a top n-layer may also be a n-layer and comprises at least one material selected from a group consisting of n-GaN, n-InGaN, n-AlGaN, n-AlGaInN, n-ZnO, n-ZnCdO, n-ZnMgO, n-ZnMgCdO so that the top n-layer is made highly conductive and show very rough surface.

Diethylene Glycol Monomethyl Ether Resistant Coating

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US Patent:
20120088862, Apr 12, 2012
Filed:
Oct 7, 2010
Appl. No.:
12/899805
Inventors:
Siamanto Abrami - Glendale CA, US
Jin Song - Stevenson Ranch CA, US
Guangliang Tang - Stevenson Ranch CA, US
International Classification:
C09D 163/00
C09D 175/04
US Classification:
523435
Abstract:
Diethylene glycol monomethyl ether resistant coatings include a base component including a sulfur-containing, epoxy functional polyol, and an activator component including an isocyanate curing agent.

Group Iv Element Doped P-Type Zn(Mg,Cd,Be)O(S,Se) Semiconductor

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US Patent:
20120119203, May 17, 2012
Filed:
Nov 11, 2010
Appl. No.:
12/944227
Inventors:
Jizhi Zhang - Walnut CA, US
Jin Joo Song - Brea CA, US
International Classification:
H01L 29/22
H01B 1/10
US Classification:
257 43, 2525194, 257E29094
Abstract:
A p-type group II-VI semiconductor may include a group IV element as a dopant. The group II-IV semiconductor may be ZnMgCdBeOSSe, wherein a=01, b=01, c=01, p=01 and q=01.

Vertically Structured Led By Integrating Nitride Semiconductors With Zn(Mg,Cd,Be)O(S,Se) And Method For Making Same

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US Patent:
20150008461, Jan 8, 2015
Filed:
Feb 3, 2014
Appl. No.:
14/171696
Inventors:
- Brea CA, US
Jin Joo Song - Brea CA, US
Assignee:
ZN Technology, Inc. - Brea CA
International Classification:
H01L 33/00
H01L 33/50
H01L 33/46
US Classification:
257 94
Abstract:
A light emitting diode (LED) with a vertical structure, including electrical contacts on opposing sides, provides increased brightness. In some embodiments an LED includes a nitride semiconductor light emitting component grown on a sapphire substrate, a Zn(Mg,Cd,Be)O(S,Se) assembly formed on the nitride semiconductor component, and a further Zn(Mg,Cd,Be)O(S,Se) assembly bonded on an opposing side of the light emitting component, which is exposed by removing the sapphire substrate. Electrical contacts may be connected to the Zn(Mg,Cd,Be)O(S,Se) assembly and the further Zn(Mg,Cd,Be)O(S,Se) assembly. Herein Zn(Mg,Cd,Be)O(S,Se) is a II-VI semiconductor satisfying a formula ZnMgCdBeOSSe, wherein a=01, b=01, c=01, p=01, and q=01.
Control profile
Jin K Song from Downey, CA, age ~60 Get Report