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Jie M Diao

from Fremont, CA
Age ~48
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Also known as:
Jie Dias
Phone and address:
4471 Macbeth Cir, Fremont, CA 94555
Connected to:
David D Diao, 81Ibrahima Diao, 54Jenny R Diao, 27Jun Diao, 43Kevin Diao, 33Mamadou Diao, 44Mi Diao, 52Qi I Diao, 43Sophie Diao, 32John Diarbakerly, 73

Jie Diao Phones & Addresses

  • 4471 Macbeth Cir, Fremont, CA 94555
  • San Jose, CA
  • 251 10Th St, Atlanta, GA 30318 (404) 873-0199
  • 1185 Collier St, Atlanta, GA 30318 (404) 352-3599
  • Alameda, CA
  • 251 10Th St NW, Atlanta, GA 30318 (404) 376-5205

Work

Position: Service Occupations

Education

Degree: High school graduate or higher

Emails

j***[email protected]

Publications

Us Patents

Method And Apparatus For Electroprocessing A Substrate With Edge Profile Control

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US Patent:
7422982, Sep 9, 2008
Filed:
Jul 7, 2006
Appl. No.:
11/483843
Inventors:
You Wang - Cupertino CA, US
Jie Diao - San Jose CA, US
Stan D. Tsai - Fremont CA, US
Lakshmanan Karuppiah - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/302
H01L 21/461
US Classification:
438692, 438693, 438714, 438729, 257E21583, 257E21304, 216 83
Abstract:
A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, and biasing a second electrode disposed radially inward of the first electrode with a bias that is different than the bias applied to the first electrode. In one embodiment, the first electrode is coated with an inert material and in this way the same polish rate is obtained with a lower potential level applied to the first electrode.

Electrochemical Method For Ecmp Polishing Pad Conditioning

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US Patent:
7504018, Mar 17, 2009
Filed:
Oct 31, 2006
Appl. No.:
11/554928
Inventors:
You Wang - Cupertino CA, US
Stan D. Tsai - Fremont CA, US
Lakshmanan Karuppiah - San Jose CA, US
Jie Diao - San Jose CA, US
Renhe Jia - Berkeley CA, US
Alpay Yilmaz - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C25F 7/00
C25F 3/16
US Classification:
205644, 205640
Abstract:
A method for conditioning an Ecmp pad is provided. In one embodiment, a method for electrochemically processing a substrate includes the steps of providing an electrical bias voltage between the top surface of the pad assembly and an electrode, and electrochemically removing contaminants from the top surface of the pad.

Process Sequence To Achieve Global Planarity Using A Combination Of Fixed Abrasive And High Selectivity Slurry For Pre-Metal Dielectric Cmp Applications

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US Patent:
8211325, Jul 3, 2012
Filed:
Apr 9, 2010
Appl. No.:
12/757767
Inventors:
Jie Diao - Fremont CA, US
Garlen C. Leung - San Jose CA, US
Christopher Heung-Gyun Lee - San Jose CA, US
Lakshmanan Karuppiah - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B44C 1/22
C03C 15/00
C03C 25/68
C23F 1/00
US Classification:
216 88, 216 89, 438692, 451 41
Abstract:
A method and apparatus for polishing or planarizing a pre-metal dielectric layer by a chemical mechanical polishing process are provided. The method comprises providing a semiconductor substrate having feature definitions formed thereon, forming a pre-metal dielectric layer over the substrate, wherein the as-deposited pre-metal dielectric layer has an uneven surface topography, and planarizing the uneven surface topography of the pre-metal dielectric layer using chemical mechanical polishing techniques, wherein planarizing the uneven surface topography comprises polishing the pre-metal dielectric layer with a fixed abrasive polishing pad and a first polishing composition to remove a bulk portion of the pre-metal dielectric layer and achieve a first predetermined planarity, and polishing the pre-metal dielectric layer with a non-abrasive polishing pad and high selectivity slurry to remove a residual portion of the pre-metal dielectric and achieve a second predetermined planarity.

Chemical Mechanical Polisher With Heater And Method

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US Patent:
8439723, May 14, 2013
Filed:
Aug 11, 2008
Appl. No.:
12/189641
Inventors:
Robert A. Marks - San Jose CA, US
Christopher Heung-Gyun Lee - San Jose CA, US
Garlen C. Leung - San Jose CA, US
Gregory E. Menk - Pleasanton CA, US
Jie Diao - Fremont CA, US
Erik S. Rondum - San Ramon CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B24B 49/14
US Classification:
451 7, 451 53
Abstract:
A chemical mechanical apparatus comprises a polishing platen, a roller pad assembly capable of advancing a polishing pad across the platen, a substrate carrier to press a substrate against the polishing pad, and a heater to heat the substrate to a temperature sufficiently high to provide a rate of removal of material from the substrate that compensates for the wear of the polishing pad.

Process And Composition For Electrochemical Mechanical Polishing

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US Patent:
20060249394, Nov 9, 2006
Filed:
Oct 14, 2005
Appl. No.:
11/251630
Inventors:
Renhe Jia - Berkeley CA, US
You Wang - Cupertino CA, US
Zhihong Wang - Santa Clara CA, US
Jie Diao - San Jose CA, US
Daxin Mao - Cupertino CA, US
Stan Tsai - Fremont CA, US
Lakshmanan Karuppiah - San Jose CA, US
Liang-Yuh Chen - Foster City CA, US
International Classification:
C09K 13/00
B23H 9/00
C25F 3/00
C09K 13/06
US Classification:
205640000, 252079100, 252079400
Abstract:
Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.

Process And Composition For Electrochemical Mechanical Polishing

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US Patent:
20060249395, Nov 9, 2006
Filed:
Mar 27, 2006
Appl. No.:
11/389867
Inventors:
You Wang - Cupertino CA, US
Junzi Zhao - Cupertino CA, US
Jie Diao - San Jose CA, US
Renhe Jia - Berkeley CA, US
Stan Tsai - Fremont CA, US
Lakshmanan Karuppiah - San Jose CA, US
Robert Ewald - Aptos CA, US
International Classification:
C09K 13/00
B23H 9/00
B23H 3/00
US Classification:
205640000, 252079100
Abstract:
Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a leveler a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.

Method For Stabilized Polishing Process

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US Patent:
20070062815, Mar 22, 2007
Filed:
Sep 15, 2006
Appl. No.:
11/532258
Inventors:
Renhe Jia - Berkeley CA, US
Jie Diao - San Jose CA, US
Stan Tsai - Fremont CA, US
You Wang - Cupertino CA, US
Laksh Karuppiah - San Jose CA, US
International Classification:
C25C 1/22
US Classification:
205048000
Abstract:
A method for electrochemically processing a substrate is provided. In one embodiment, a method for electrochemically processing a substrate includes processing a substrate using a multi-step routine that includes a first processing period performed using a varying voltage to achieve a target removal current followed by a second processing period performed using a constant voltage.

Conductive Pad With Ion Exchange Membrane For Electrochemical Mechanical Polishing

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US Patent:
20070099552, May 3, 2007
Filed:
Oct 31, 2006
Appl. No.:
11/555145
Inventors:
Liang-Yuh Chen - Foster City CA, US
Yuchun Wang - San Jose CA, US
Yan Wang - Sunnyvale CA, US
Alain Duboust - Sunnyvale CA, US
Daniel Carl - Pleasanton CA, US
Ralph Wadensweiler - Sunnyvale CA, US
Manoocher Birang - Los Gatos CA, US
Paul Butterfield - San Jose CA, US
Rashid Mavliev - Campbell CA, US
Stan Tsai - Fremont CA, US
You Wang - Cupetino CA, US
Jie Diao - San Jose CA, US
Renhe Jia - Berkeley CA, US
Lakshmanan Karuppiah - San Jose CA, US
Robert Ewald - Aptos CA, US
International Classification:
B23F 21/03
US Classification:
451548000
Abstract:
An article of manufacture and apparatus are provided for processing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive polishing surface. An electrode is disposed below the polishing surface having a dielectric material therebetween. A plurality of apertures may be formed in the polishing surface and the dielectric material to at least partially expose the electrode to the polishing surface. A membrane may be disposed between the electrode and the polishing surface that is permeable to ions and current to promote continuity between the electrode and the polishing surface.
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Jie M Diao from Fremont, CA, age ~48 Get Report