Myung Lee

7751332, Jul 6, 2010

Oct 25, 2007

11/923777

Yong Liu - San Jose CA, US
Eun Il Seo - Hwaseong-si, KR
Jin Young Yang - Seoul, KR
Myung Jong Lee - New York NY, US
Xuhui Hu - New York NY, US

Samsung Electronics Co., Ltd. - Suwon-si
The Research Foundation of the City University of New York - New York NY

H04L 12/28

370238, 370251, 370254, 709241

A data routing method and system, the data routing method including: locating a destination node using a destination locating packet; establishing a preliminary route including anchor nodes based on a route where the destination locating packet is transmitted to the destination node; determining a link cost between neighbor nodes of each of the anchor nodes, and also between the anchor nodes and the neighbor nodes of each of the anchor nodes; generating minimum cost information with respect to a route consuming a minimum cost from the destination node to a source node using the link cost; and forming a data route from the destination node to the source node using the minimum cost information.

20120284727, Nov 8, 2012

May 5, 2011

13/101626

Muralidharan S. Kodialam - Marlboro NJ, US
Sarit Mukherjee - Morganville NJ, US
Hyunseok Chang - Holmdel NJ, US
Myung Jin Lee - West Lafayette IN, US

Alcatel-Lucent - Murray Hill NJ

G06F 9/46

718103, 718104

A method and system for scheduling tasks is provided. A plurality of lower bound completion times is determined, using one or more computer processors and memory, for each of a plurality of jobs, each of the plurality of jobs including a respective subset plurality of tasks. A task schedule is determined for each of the plurality of processors based on the lower bound completion times.

57857563, Jul 28, 1998

Mar 6, 1997

8/811755

Myung B. Lee - West Orange NJ

Northrop Grumman Corporation - Los Angeles CA

C30B 2304

117105

A novel molecular beam epitaxy deposition process for precisely growing structurally robust films and coatings containing germanium and various fluoride compounds for use as an optical filter. The process comprises depositing two (2) materials having different indices of refraction via molecular beam epitaxy at a temperature significantly lower than the optimal growth temperature. At such lower temperature, layers of the respective compounds are grown, via molecular beam epitaxy, such that the layers contain large concentrations of dislocations. Once the film or coating has been grown to the desired thickness, the material deposited is allowed to cool to room temperature and may then be used in a wide range of applications.

20160240457, Aug 18, 2016

Feb 18, 2015

14/625020

- San Jose CA, US
Myung June Lee - Cupertino CA, US

H01L 23/48
H01L 21/768
H01L 21/56

An integrated circuit package may include a first integrated circuit die attached to a front surface of a second integrated circuit die. An intermediate layer made of a molding compound is formed to surround the second integrated circuit die in a “fan-out” arrangement while leaving a surface of the second integrated circuit die exposed. Accordingly, a group of via holes is then formed in the intermediate layer and filled with a conductive material. Such a configuration forms a dual-sided stacking structure. The stacking structure may also be applicable for package-on-package packages and fan-out wafer-level chip scale packages, in which the stacking structure is formed between two heterogeneous or homogeneous integrated circuit packages.