Inventors:
Shwu Jen Jeng - Fishkill NY
Jerzy Kanicki - Katonah NY
David E. Kotecki - Hopewell Junction NY
Christopher C. Parks - Beacon NY
Zu-Jean Tien - Saratoga CA
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2972
Abstract:
A polyemitter structure having a thin interfacial layer deposited between the polysilicon emitter contact and the crystalline silicon emitter, as opposed to a regrown SiO. sub. x layer, has improved reproducibility and performance characteristics. A n-doped hydrogenated microcrystalline silicon film can be used as the deposited interfacial film between a crystalline silicon emitter and a polycrystalline silicon contact.