Jerry G Fossum

6498371, Dec 24, 2002

Jul 31, 2001

09/919543

Srinath Krishnan - Campbell CA
Jerry G. Fossum - Gainesville FL

Advanced Micro Devices, Inc. - Sunnyvale CA

H01L 310392

257351, 251347, 251348, 251349, 438154, 438199, 438967

An SOI CMOS inverter circuit in which a silicide layer in combination with body tie regions tie a p-type body region and an n-type body region together. At the same time, however, the body regions remain floating electrically so that the benefits of SOI are maintained. The silicide layer permits excess carriers to be recombined via the respective body regions so that the body region potential does not get modulated by generation/recombination effects. Thus, a hysteresis effect in the inverter circuit will be reduced.

6630376, Oct 7, 2003

Oct 31, 2002

10/284839

Srinath Krishnan - Campbell CA
Jerry G. Fossum - Gainesville FL

Advanced Micro Devices, Inc. - Sunnyvale CA

H01L 218238

438199, 438479

An SOI CMOS inverter circuit in which a silicide layer in combination with body tie regions tie a p-type body region and an n-type body region together. At the same time, however, the body regions remain floating electrically so that the benefits of SOI are maintained. The silicide layer permits excess carriers to be recombined via the respective body regions so that the body region potential does not get modulated by generation/recombination effects. Thus, a hysteresis effect in the inverter circuit will be reduced.

7470951, Dec 30, 2008

Jan 31, 2005

11/047543

Leo Mathew - Austin TX, US
Jerry G. Fossum - Gainesville FL, US

Freescale Semiconductor, Inc. - Austin TX

H01L 29/94

257327, 257328, 257329, 257350, 257347, 257348, 257349, 257E51005

A semiconductor device () is provided herein. The semiconductor device comprises (a) a substrate (), a semiconductor layer () disposed on said substrate and comprising a horizontal region () and a fin which extends above, and is disposed adjacent to, said horizontal region, and (c) at least one channel region () defined in said fin and in said horizontal region.

8498140, Jul 30, 2013

Oct 1, 2008

12/681289

Jerry G. Fossum - Gainesville FL, US
Leo Mathew - Austin TX, US
Michael Sadd - Austin TX, US
Vishal P. Trivedi - Chandler AZ, US

University of Florida Research Foundation, Inc. - Gainesville FL

G11C 5/02
G11C 5/06
G11C 7/00
G11C 11/401
G11C 11/4063
G11C 11/40

365 72, 365 51, 365 63, 365184, 365189011, 257347, 257E27111

Embodiments relate to a two-transistor (2T) floating-body cell (FBC) for embedded-DRAM applications. Further embodiments pertain to a floating-body/gate cell (FBGC), which yields reduction in power dissipation, in addition to better signal margin, longer data retention, and higher memory density.

20110222337, Sep 15, 2011

Dec 29, 2009

13/124066

Jerry G. Fossum - Gainesville FL, US
Zhichao Lu - Santa Clara CA, US

University of Florida Research Foundation, Inc. - Gainesville FL

G11C 11/36
H01L 27/12

365175, 257347, 257E27112

Memory cell structures and biasing schemes are provided. Certain embodiments pertain to a modified floating-body gate cell, which can provide improved retention times. In one embodiment, a gated diode is used to drive the gate of a second transistor structure of a cell. In another embodiment, a body-tied-source (BTS) field effect transistor is used to drive the gate of the second transistor structure of a cell.

43439624, Aug 10, 1982

Feb 2, 1981

6/230682

Arnost Neugroschel - Gainesville FL
Shing-Chong Pao - Gainesville FL
Fred A. Lindholm - Gainesville FL
Jerry G. Fossum - Gainesville FL

H01L 3106

136255

A high-low junction emitter silicon solar cell including an electron accumulation layer formed by oxide-charge-induction.

44830637, Nov 20, 1984

Jun 1, 1982

6/383617

Arnost Neugroschel - Gainesville FL
Shing-Chong Pao - Gainesville FL
Fred A. Lindholm - Gainesville FL
Jerry G. Fossum - Gainesville FL

University of Florida - Gainesville FL

H01L 3118
H01L 3106

29572

A method of forming a high-low junction emitter silicon solar cell including the producing of an electron accumulation layer by oxide-charge-induction.