Jens Albrecht Riege

8188575, May 29, 2012

Oct 5, 2010

12/898622

Jens A. Riege - Ojai CA, US
Heather L. Knoedler - Newbury Park CA, US
Shiban K. Tiku - Camarillo CA, US

Skyworks Solutions, Inc. - Woburn MA

H01L 23/544

257620, 257E23179, 257750, 438694, 438702, 427171, 4272481

Apparatus and methods for uniform metal plating onto a semiconductor wafer, such as GaAs wafer, are disclosed. One such apparatus can include an anode and a showerhead body. The anode can include an anode post and a showerhead anode plate. The showerhead anode plate can include holes sized to dispense a particular plating solution, such as plating solution that includes gold, onto a wafer. The showerhead body can be coupled to the anode post and the showerhead anode plate. The showerhead body can be configured to create a seal sufficient to substantially prevent a reduction of pressure in the plating solution flowing from the anode post to holes of the showerhead anode plate.

8415770, Apr 9, 2013

May 2, 2012

13/462651

Jens A. Riege - Ojai CA, US
Heather L. Knoedler - Newbury Park CA, US
Shiban K. Tiku - Camarillo CA, US

Skyworks Solutions, Inc. - Woburn MA

H01L 23/544

257620, 257E23179, 257750, 118 501, 118620, 414935, 414941, 438702, 4272481

Apparatus and methods for uniform metal plating onto a semiconductor wafer, such as GaAs wafer, are disclosed. One such apparatus can include an anode and a showerhead body. The anode can include an anode post and a showerhead anode plate. The showerhead anode plate can include holes sized to dispense a particular plating solution, such as plating solution that includes gold, onto a wafer. The showerhead body can be coupled to the anode post and the showerhead anode plate. The showerhead body can be configured to create a seal sufficient to substantially prevent a reduction of pressure in the plating solution flowing from the anode post to holes of the showerhead anode plate.

8481344, Jul 9, 2013

Jul 8, 2011

13/179382

Lam T. Luu - Moorpark CA, US
Shiban K. Tiku - Camarillo CA, US
Richard S. Bingle - Thousand Oaks CA, US
Jens A. Riege - Ojai CA, US
Heather L. Knoedler - Newbury Park CA, US
Daniel C. Weaver - Newbury Park CA, US

Skyworks Solutions, Inc. - Woburn MA

H01L 21/687
C23C 14/54

438 14, 438604, 118712, 118730

Apparatus and methods for evaporating metal onto semiconductor wafers are disclosed. One such apparatus can include an evaporation chamber that includes a wafer holder, such as a dome, and a test wafer holder that is separate and spaced apart from the wafer holder. In certain implementations, the test wafer can be coupled to a cross beam supporting at least one shaper. A metal can be evaporated onto production wafers positioned in the wafer holder while metal is evaporated on a test wafer positioned in a test wafer holder. In some instances, the production wafers can be GaAs wafers. The test wafer can be used to make a quality assessment about the production wafers.

8546048, Oct 1, 2013

Oct 28, 2011

13/284280

Jens Albrecht Riege - Ojai CA, US

Skyworks Solutions, Inc. - Woburn MA

G03F 7/00
G03F 1/68

430 5, 430325

A technique generating sloping resist profiles based on an exposure process uses a reticle having structures surrounded with first and second contrasting interleaved bands below the resolution limit of the stepper used to expose the resist. Exemplary embodiments include a reticle having interleaved, non-overlapping transparent and opaque bands surrounding a transparent feature with an innermost one of the opaque bands bordering the structure, such as a via opening or a metal conductors pattern, resulting in the patterned photoresist having sloped or tapered sides with consistent reproducibility. The slope in the photoresist is then transferred to the underlying layer during an etch using the tapered photoresist as a mask. Alternatively, the sloped resist can have a negative slope angle for patterning metal conductors using a metal lift-off technique.

20120080150, Apr 5, 2012

Oct 5, 2010

12/898648

Jens A. Riege - Ojai CA, US
Steve Canale - Simi Valley CA, US
David J. Zapp - Simi Valley CA, US

SKYWORKS SOLUTIONS, INC. - Woburn MA

B32B 38/10

156752, 156761

Disclosed are systems, devices and methodologies for separating wafers from carrier plates. In certain wafer processing operations, it is desirable to temporarily mount a wafer on a carrier plate for support and ease of handling. Such a mounting can be achieved by bonding the wafer and the carrier plate with an adhesive. Once such operations are completed, the wafer needs to be separated or unbonded from the carrier plate. Such a separation process can be achieved by applying a mechanical shear force to the wafer-carrier plate assembly. Various devices and methodologies, and related features, are disclosed.

20140002188, Jan 2, 2014

Jun 13, 2013

13/917384

Yifan Guo - Irvine CA, US
Mehran Janani - Oak Park CA, US
Tin Myint Ko - Newbury Park CA, US
Philip John Lehtola - Cedar Rapids IA, US
Anthony James LoBianco - Irvine CA, US
Hardik Bhupendra Modi - Irvine CA, US
Hoang Mong Nguyen - Fountain Valley CA, US
Matthew Thomas Ozalas - Novato CA, US
Sandra Louise Petty-Weeks - Newport Beach CA, US
Matthew Sean Read - Rancho Santa Margarita CA, US
Jens Albrecht Riege - Ojai CA, US
David Steven Ripley - Marion IA, US
Hongxiao Shao - Thousand Oaks CA, US
Hong Shen - Oak Park CA, US
Weimin Sun - Santa Rosa Valley CA, US
Hsiang-Chih Sun - Thousand Oaks CA, US
Patrick Lawrence Welch - Campbell CA, US
Guohao Zhang - Nanjing, CN

SKYWORKS SOLUTIONS, INC. - Woburn MA

H03F 3/19

330250

A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×10cmat a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

8022448, Sep 20, 2011

Oct 5, 2010

12/898632

Lam T. Luu - Moorpark CA, US
Shiban K. Tiku - Camarillo CA, US
Richard S. Bingle - Thousand Oaks CA, US
Jens A. Riege - Ojai CA, US
Heather L. Knoedler - Newbury Park CA, US
Daniel C. Weaver - Newbury Park CA, US

Skyworks Solutions, Inc. - Woburn MA

H01L 29/76

257288, 257347, 257E21161, 257E21169, 257E21295, 257 48, 438674, 438768, 438785, 438240, 438 7

Apparatus and methods for evaporating metal onto semiconductor wafers are disclosed. One such apparatus can include an evaporation chamber that includes a wafer holder, such as a dome, and a test wafer holder that is separate and spaced apart from the wafer holder. In certain implementations, the test wafer can be coupled to a cross beam supporting at least one shaper. A metal can be evaporated onto production wafers positioned in the wafer holder while metal is evaporated on a test wafer positioned in a test wafer holder. In some instances, the production wafers can be GaAs wafers. The test wafer can be used to make a quality assessment about the production wafers.

20220393653, Dec 8, 2022

Aug 17, 2022

17/820497

- Irvine CA, US
Hongxiao Shao - Thousand Oaks CA, US
Tin Myint Ko - Newbury Park CA, US
Matthew Thomas Ozalas - Novato CA, US
Hong Shen - Palo Alto CA, US
Mehran Janani - Oak Park CA, US
Jens Albrecht Riege - Ojai CA, US
Hsiang-Chih Sun - Thousand Oaks CA, US
David Steven Ripley - Cedar Rapids IA, US
Philip John Lehtola - Cedar Rapids IA, US

H03F 3/213
H03F 3/19
H03F 1/02
H03F 3/21
H03F 3/195
H01L 23/00
H01L 21/768
H03F 3/24
H01L 23/552
H01L 29/36
H01L 29/66
H01L 29/737
H01L 29/812
H01L 29/08
H01L 29/205
H01L 21/8252
H01L 27/06
H01L 23/498
H01L 23/50
H03F 3/60
H01L 23/66
H01L 29/20
H01L 23/48
H01L 21/48
H01L 21/56
H01L 21/78
H01L 21/8249
H01L 21/66
H01L 23/31
H01L 23/522

One aspect of this disclosure is a power amplifier module that includes a power amplifier, a semiconductor resistor, a tantalum nitride terminated through wafer via, and a conductive layer electrically connected to the power amplifier. The semiconductor resistor can include a resistive layer that includes a same material as a layer of a bipolar transistor of the power amplifier. A portion of the conductive layer can be in the tantalum nitride terminated through wafer via. The conductive layer and the power amplifier can be on opposing sides of a semiconductor substrate. Other embodiments of the module are provided along with related methods and components thereof.