Jenny H Hu

20110127273, Jun 2, 2011

Nov 29, 2010

12/927982

Geoffrey F. Deane - Bellevue WA, US
Lawrence Morgan Fowler - Pound Ridge NY, US
William Gates - Redmond WA, US
Jenny Ezu Hu - Seattle WA, US
Roderick A. Hyde - Redmond WA, US
Edward K.Y. Jung - Bellevue WA, US
Jordin T. Kare - Seattle WA, US
Nathan P. Myhrvold - Bellevue WA, US
Nathan Pegram - Bellevue WA, US
Nels R. Peterson - Seattle WA, US
Clarence T. Tegreene - Bellevue WA, US
Charles Whitmer - North Bend WA, US

B65D 81/38

2205922, 22059226, 22059227

Temperature-stabilized storage systems are described herein. Substantially thermally sealed storage containers include an outer assembly, including one or more sections of ultra efficient insulation material substantially defining at least one thermally sealed storage region, wherein the outer assembly and the one or more sections of ultra efficient insulation material substantially define a single access aperture to the at least one thermally sealed storage region; and an inner assembly within the at least one thermally sealed storage region, including a storage structure configured for receiving and storing at least one heat sink module and at least one stored material module. Systems including at least one substantially thermally sealed storage container and an information system are also described.

20120000918, Jan 5, 2012

Jun 23, 2011

13/135126

Geoffrey F. Deane - Bellevue WA, US
Lawrence Morgan Fowler - Pound Ridge NY, US
William Gates - Redmond WA, US
Jenny Ezu Hu - Seattle WA, US
Roderick A. Hyde - Redmond WA, US
Edward K.Y. Jung - Bellevue WA, US
Jordin T. Kare - Seattle WA, US
Mark K. Kuiper - Seattle WA, US
Nathan P. Myhrvold - Bellevue WA, US
Nathan Pegram - Bellevue WA, US
Nels R. Peterson - Bellevue WA, US
Clarence T. Tegreene - Bellevue WA, US
Mike Vilhauer - Kirkland WA, US
Charles Whitmer - North Bend WA, US
Ozgur Emek Yildirim - Bellevue WA, US

B65D 81/38

2205922

Apparatus for use with substantially thermally sealed storage containers are described herein. These include an apparatus comprising a stored material module, a stabilizer unit, a stored material module cap and a central stabilizer unit. The apparatus also include a transportation stabilizer unit with dimensions corresponding to a substantially thermally sealed storage container with a flexible conduit.

20120289236, Nov 15, 2012

Aug 25, 2011

13/217743

LIMEI XU - MOUNTAIN VIEW CA, US
JENNY HU - CUPERTINO CA, US

H04W 40/00

455446

This invention relates to a method for controlling location distribution of sensing nodes, selection of sensing nodes, control of sensing implementation and process of performing spectrum sensing in cognitive radio networks of open wireless architecture (OWA) systems. Specifically, the invention relates to an efficient and reliable method minimizing time overhead consumed during spectrum sensing with open wireless architecture (OWA).

20120315364, Dec 13, 2012

Jun 8, 2012

13/492664

Cary Richard Champlin - Issaquah WA, US
Lawrence Morgan Fowler - Redmond WA, US
Zihong Guo - Bellevue WA, US
Jenny E. Hu - Seattle WA, US
Ian Fletcher Kent - Cambridge, GB
Ian Murray - Seattle WA, US
Nathan John Pegram - Seattle WA, US
Shannon Weise Stone - Redmond WA, US
Sarah Patricia Walters - Bellevue WA, US
Ozgur Emek Yildirim - Bellevue WA, US
Christopher C. Young - Seattle WA, US

A23C 3/02

426522, 99483, 426521, 99453

The present disclosure relates to methods, systems, and devices that may be used to heat treat and store one or more fluids.

20130319899, Dec 5, 2013

May 31, 2012

13/485059

Lawrence Morgan Fowler - Redmond WA, US
Zihong Guo - Bellevue WA, US
Jenny Hu - Seattle WA, US
John Arthur Ohrt - Redmond WA, US

B65D 21/00
B65D 51/00
B29C 49/00
B65B 7/28

206499, 220752, 215 44, 220200, 264523

The present disclosure relates to vessels and processes that may be used to fabricate vessels.

20130319900, Dec 5, 2013

May 31, 2012

13/485027

Lawrence Morgan Fowler - Redmond WA, US
Zihong Guo - Bellevue WA, US
Jenny Hu - Seattle WA, US
John Arthur Ohrt - Redmond WA, US

B65D 21/032
B29C 49/04

206509, 264533

The present disclosure relates to vessels and processes that may be used to fabricate vessels.

20230077843, Mar 16, 2023

Aug 12, 2022

17/887222

- Cupertino CA, US
Mehmet N Agaoglu - Dublin CA, US
Gokhan Avkarogullari - San Jose CA, US
Jenny Hu - Sunnyvale CA, US
Alexander K Kan - San Carlos CA, US
Yuhui Li - Cupertino CA, US
James R Montgomerie - Sunnyvale CA, US
Andrey Pokrovskiy - Mountain View CA, US
Yingying Tang - Cupertino CA, US
Chaohao Wang - Shanghai, CN

G09G 5/36

An electronic device may include a display. Control circuitry may operate the display at different frame rates such as 60 Hz, 80 Hz, and 120 Hz. The control circuitry may determine which frame rate to use based on a speed of animation on the display and based on a type of animation on the display. To mitigate the appearance of judder as the display frame rate changes, the control circuitry may implement techniques such as hysteresis (e.g., windows of tolerance around speed thresholds to ensure that the display frame rate does not change too frequently as a result of noise), speed thresholds that are based on a user perception study, consistent latency between touch input detection and corresponding display output across different frame rates (e.g., using a fixed touch scan rate that is independent of frame duration), and animation-specific speed thresholds for triggering frame rate changes.

20210043754, Feb 11, 2021

Oct 26, 2020

17/080713

- Santa Clara CA, US
Jenny HU - Santa Clara CA, US
Anindya DASGUPTA - Portland OR, US
Michael L. HATTENDORF - Portland OR, US
Christopher P. AUTH - Portland OR, US

H01L 29/66
H01L 29/78
H01L 21/285
H01L 21/02
H01L 27/088
H01L 29/06
H01L 21/8234
H01L 21/768
H01L 21/8238
H01L 29/417
H01L 21/311
H01L 27/092
H01L 29/08
H01L 21/762
H01L 21/033
H01L 21/28
H01L 21/308
H01L 49/02
H01L 23/532
H01L 27/02
H01L 23/528
H01L 29/167
H01L 23/522
H01L 29/165
H01L 27/11
H01L 29/51
H01L 23/00

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a semiconductor substrate comprising an N well region having a semiconductor fin protruding therefrom. A trench isolation layer is on the semiconductor substrate around the semiconductor fin, wherein the semiconductor fin extends above the trench isolation layer. A gate dielectric layer is over the semiconductor fin. A conductive layer is over the gate dielectric layer over the semiconductor fin, the conductive layer comprising titanium, nitrogen and oxygen. A P-type metal gate layer is over the conductive layer over the semiconductor fin.