Jennifer A Lund

6534843, Mar 18, 2003

Feb 10, 2001

09/781014

Raul E. Acosta - White Plains NY
Jennifer L. Lund - Amawalk NY
Robert A. Groves - Highland NY
Joanna Rosner - Hastings-on-Hudson NY
Steven A. Cordes - Yorktown Heights NY
Melanie L. Carasso - West Pennant Hills, AU

International Business Machines Corporation - Armonk NY

H01L 2900

257531, 257534, 257539, 257500, 257338, 257351

Inductor losses to a semiconducting substrate are eliminated in an IC structure by etching a well into the substrate down to the insulating layer coating the substrate and fabricating a grounded Faraday shield in the shape of elongated segments in the bottom of the well. The well lies directly below the inductor and is optionally filled with cured low-k organic dielectric or air.

6720230, Apr 13, 2004

Sep 10, 2002

10/238746

Raul E. Acosta - White Plains NY
Melanie L. Carasso - West Pennant Hills, AU
Steven A. Cordes - Yorktown Heights NY
Robert A. Groves - Highland NY
Jennifer L. Lund - Amawalk NY
Joanna Rosner - Hastings-on-Hudson NY

International Business Machines Corporation - Armonk NY

H01L 2120

438381, 438 3, 438640

A means for fabrication of solenoidal inductors integrated in a semiconductor chip is provided. The solenoidal coil is partially embedded in a deep well etched into the chip substrate. The non-embedded part of the coil is fabricated as part of the BEOL metallization layers. This allows for a large cross-sectional area of the solenoid turns, thus reducing the turn-to-turn capacitive coupling. Because the solenoidal coils of this invention have a large diameter cross-section, the coil can be made with a large inductance value and yet occupy a small area of the chip. The fabrication process includes etching of a deep cavity in the substrate after all the FEOL steps are completed; lining said cavity with a dielectric followed by fabrication of the part of the coil that will be embedded by deposition of a conductive material metal through a mask; deposition of dielectric and planarization of same by CMP. After planarization the fabrication of the remaining part of the solenoidal coil is fabricated as part of the metallization in the BEOL (i. e. as line/vias of the BEOL).

6762088, Jul 13, 2004

Jan 3, 2003

10/336291

Raul E. Acosta - White Plains NY
Jennifer L. Lund - Amawalk NY
Robert A. Groves - Highland NY
Joanna Rosner - Hastings-on-Hudson NY
Steven A. Cordes - Yorktown Heights NY
Melanie L. Carasso - West Pennant Hills, AU

International Business Machines Corporation - Armonk NY

H01L 2120

438238, 438381

Inductor losses to a semiconducting substrate are eliminated in an IC structure by etching a well into the substrate down to the insulating layer coating the substrate and fabricating a grounded Faraday shield in the shape of elongated segments in the bottom of the well. The well lies directly below the inductor and is optionally filled with cured low-k organic dielectric or air.

6836029, Dec 28, 2004

Nov 28, 2001

09/996148

David R. Greenberg - White Plains NY
Hariklia Deligianni - Edgewater NJ
Robert A. Groves - Highland NY
Christopher V. Jahnes - Upper Saddle River NJ
Jennifer L. Lund - Amawalk NY
Katherine L. Saenger - Ossining NY
Richard P. Volant - New Fairfield CT

International Business Machines Corporation - Armonk NY

H01H 300

307139, 200181, 307134

A micro-electro mechanical switch having a restoring force sufficiently large to overcome stiction is described. The switch is provided with a deflectable conductive beam and multiple electrodes coated with an elastically deformable conductive layer. A restoring force which is initially generated by a single spring constant k upon the application of a control voltage between the deflectable beam and a control electrode coplanar to the contact electrodes is supplemented by adding to k additional spring constants k ,. . . , kn provided by the deformable layers, once the switch nears closure and the layers compress. In another embodiment, deformable, spring-like elements are used in lieu of the deformable layers. In an additional embodiment, the compressible layers or deformable spring-like elements are affixed to the deflecting beam facing the switch electrodes.

6917268, Jul 12, 2005

Dec 31, 2001

10/035840

Hariklia Deligianni - Tenafly NJ, US
Christopher V. Jahnes - Upper Saddle River NJ, US
Jennifer L. Lund - Amawalk NY, US
Lawrence E. Larson - Del Mar CA, US

International Business Machines Corporation - Armonk NY

H01H051/22

335 78, 200181

A switch comprising a substrate, an elongated movable part, a pair of electrical contacts disposed at one side of said part, an actuation electrode disposed at the one side of the part and separated from the pair of electrical contacts, wherein the part, the contacts and the electrode are disposed on the substrate, wherein the elongated movable part is arranged and dimensioned such that the part is movable in a generally lateral direction toward the contacts; the movable part includes a central elongated member fixed to a head having an electrical contact disposed at the one side. One end of the movable part is attached to the substrate by means of various anchoring arrangements.

6977569, Dec 20, 2005

Aug 11, 2004

10/915742

Hariklia Deligianni - Tenafly NJ, US
Christopher V. Jahnes - Upper Saddle River NJ, US
Jennifer L. Lund - Amawalk NY, US
Lawrence E. Larson - Del Mar CA, US

International Business Machines Corporation - Armonk NY

H01H051/22

335 78, 200181

A switch comprising a substrate, an elongated movable part, a pair of electrical contacts disposed at one side of said part, an actuation electrode disposed at the one side of the part and separated from the pair of electrical contacts, wherein the part, the contacts and the electrode are disposed on the substrate, wherein the elongated movable part is arranged and dimensioned such that the part is movable in a generally lateral direction toward the contacts; the movable part includes a central elongated member fixed to a head having an electrical contact disposed at the one side. One end of the movable part is attached to the substrate by means of various anchoring arrangements.

7202764, Apr 10, 2007

Jul 8, 2003

10/604278

Hariklia Deligianni - Tenafly NJ, US
Panayotis Andricacos - Croton on Hudson NY, US
L. Paivikki Buchwalter - Hopewell Junction NY, US
John M. Cotte - New Fairfield NY, US
Christopher Jahnes - Upper Saddle River NJ, US
Mahadevaiyer Krishnan - Hopewell Junction NY, US
John H. Magerlein - Yorktown Heights NY, US
Kenneth Stein - Sandy Hook CT, US
Richard P. Volant - New Fairfield CT, US
James A. Tornello - Cortlandt Manor NY, US
Jennifer Lund - Brookeville MD, US

International Business Machines Corporation - Armonk NY

H01H 51/22

335 78, 200181

A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400 C. ). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

7256670, Aug 14, 2007

Aug 26, 2002

10/523310

Christopher V. Jahnes - Upper Saddle River NJ, US
Jennifer L. Lund - Brookeville MD, US
Katherine L. Saenger - Ossining NY, US
Richard P. Volant - New Fairfield CT, US

International Business Machines Corporation - Armonk NY

H01H 51/22

335 78, 200181

A micro-electromechanical (MEM) RF switch provided with a deflectable membrane () activates a switch contact or plunger (). The membrane incorporates interdigitated metal electrodes () which cause a stress gradient in the membrane when activated by way of a DC electric field. The stress gradient results in a predictable bending or displacement of the membrane (), and is used to mechanically displace the switch contact (). An RF gap area () located within the cavity () is totally segregated from the gaps () between the interdigitated metal electrodes (). The membrane is electrostatically displaced in two opposing directions, thereby aiding to activate and deactivate the switch. The micro-electromechanical switch includes: a cavity (); at least one conductive path () integral to a first surface bordering the cavity; a flexible membrane () parallel to the first surface bordering the cavity (), the flexible membrane () having a plurality of actuating electrodes (); and a plunger () attached to the flexible membrane () in a direction away from the actuating electrodes (), the plunger () having a conductive surface that makes electric contact with the conductive paths, opening and closing the switch.