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Jeffry A Kelber

from Plano, TX
Age ~72
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Also known as:
Jeffry Dr Kelber, Jeffry Alan Kelber, Jeffry I Kelber, Jeff A Kelber, Jeffrey A Kelber, Jeffrey K Kelber, Jeffey A Kelber
Phone and address:
3500 Cabriolet Ct, Plano, TX 75023
(972) 519-0918
Related to:
Scott Kelber, 41Marija Spanovic, 44Arlene Kadashaw Kelber, 80
Connected to:
Allan P Kelberman, 77Don M Kelbick, 71Joseph F Kelble, 97Allisun M Kelbley, 41Diane M Kelbley, 55John W Kelbly, 92Corine M Kelbus, 58Dennis A Kelbus, 75Carmalita M Kelby, 51Carole M Kelby, 78

Jeffry Kelber Phones & Addresses

  • 3500 Cabriolet Ct, Plano, TX 75023 (972) 519-0918 (972) 596-6256
  • Albuquerque, NM
  • Denton, TX
  • Dallas, TX
  • 3500 Cabriolet Ct, Plano, TX 75023 (972) 743-8056

Work

Position: Farming-Forestry Occupation

Education

Degree: Associate degree or higher

Resumes

Resumes

Jeffry Kelber Photo 1

Regents Professor At University Of North Texas

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Position:
Regents Professor at University of North Texas
Location:
Dallas/Fort Worth Area
Industry:
Higher Education
Work:
University of North Texas
Regents Professor
Sandia National Laboratories 1979 - 1989
Member, Technical Staff
Education:
University of Illinois at Urbana-Champaign 1975 - 1979
Ph.D, Chemistry California Institute of Technology 1971 - 1975
B.S., Chemistry
Interests:
Surface Science, thin film deposition, plasma processing, novel electronic materials
Honor & Awards:
Inventor Recognition Awards (SRC)--2004 and 1998 Dekker Scholar (UNT)--2003 Dougherty Award (North Texas ACS) 2002 Toulouse Scholar (UNT)--2001
Jeffry Kelber Photo 2

Regents Professor Of Chemistry At University Of North Texas

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Position:
Regents Professor of Chemistry at University of North Texas
Location:
Dallas/Fort Worth Area
Industry:
Higher Education
Work:
University of North Texas
Regents Professor of Chemistry
Jeffry Kelber Photo 3

Regents Professor At Universityh Of North Texas

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Position:
Regents Professor at Universityh of North Texas
Location:
Dallas/Fort Worth Area
Industry:
Higher Education
Work:
Universityh of North Texas
Regents Professor
Jeffry Kelber Photo 4

Jeffry Kelber

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Business Records

Name / Title
Company / Classification
Phones & Addresses
Jeffry Kelber
Director
University of North Texas
Library
3940 N Elm St, Denton, TX 76207
307 S Ave B, Denton, TX 76203
PO Box 311068, Denton, TX 76203
(940) 565-2445
Jeffry A Kelber
President, Director
SIM CHAI, INC
3500 Cabriolet Ct, Plano, TX 75023

Publications

Us Patents

Method Of Adhesion Between An Oxide Layer And A Metal Layer

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US Patent:
6790476, Sep 14, 2004
Filed:
May 21, 2002
Appl. No.:
10/154224
Inventors:
Dwight R. Jennison - Albuquerque NM
Alexander Bogicevic - Canton MI
Jeffry A. Kelber - Plano TX
Scott A. Chambers - Kennewick WA
Assignee:
Sandia Corporation - Albuquerque NM
International Classification:
C23C 1606
US Classification:
4272557, 427250, 427534, 2041921
Abstract:
A method of controlling the wetting characteristics and increasing the adhesion between a metal and an oxide layer. By introducing a negatively-charged species to the surface of an oxide layer, layer-by-layer growth of metal deposited onto the oxide surface is promoted, increasing the adhesion strength of the metal-oxide interface. The negatively-charged species can either be deposited onto the oxide surface or a compound can be deposited that dissociates on, or reacts with, the surface to form the negatively-charged species. The deposited metal adatoms can thereby bond laterally to the negatively-charged species as well as vertically to the oxide surface as well as react with the negatively charged species, be oxidized, and incorporated on or into the surface of the oxide.

Conductor Structures Including Penetrable Materials

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US Patent:
7534967, May 19, 2009
Filed:
Feb 24, 2004
Appl. No.:
10/785615
Inventors:
Jeffry A. Kelber - Plano TX, US
Jipu Lei - Denton TX, US
Noel P. Magtoto - Denton TX, US
Sergei Rudenja - Denton TX, US
Assignee:
University of North Texas - Denton TX
International Classification:
H01R 12/04
H05K 1/11
US Classification:
174263, 174250, 174255
Abstract:
Conductor structures include a substrate, a first conducting layer that is selectively passivated from growth of unwanted surface layers by the application of a selective passivation layer, and a second conducting layer that is applied onto the selective passivation layer. The selective passivation layer prevents the combination of unwanted materials with the first conducting layer while allowing the combination of the applied second conducting layer with the first conducting layer. The selective passivation layer is displaced by the second conducting layer and remains as a passivation layer on the exposed surface of the second conducting layer being displaced, thereby protecting the first and second conducting layers from unwanted materials or unwanted surface layers. Methods of fabricating conductor structures are also provided.

Methods Of Forming Graphene/(Multilayer) Boron Nitride For Electronic Device Applications

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US Patent:
8158200, Apr 17, 2012
Filed:
Aug 18, 2009
Appl. No.:
12/543053
Inventors:
Jeffry Kelber - Plano TX, US
Assignee:
University of North Texas - Denton TX
International Classification:
C23C 16/34
US Classification:
42725538, 427255394, 4272557, 4272491
Abstract:
Disclosed is a substrate-mediated assembly for graphene structures. According to an embodiment, long-range ordered, multilayer BN(111) films can be formed by repeated atomic layer deposition (ALD) of a boron-halide or organoborane precursor and NHonto a substrate followed by a high temperature anneal. Graphene can then be formed on an ordered BN(111) film by depositing carbon on the ordered surface of the BN(111) film.

Graphene/(Multilayer) Boron Nitride Heteroepitaxy For Electronic Device Applications

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US Patent:
8338825, Dec 25, 2012
Filed:
Sep 23, 2011
Appl. No.:
13/242878
Inventors:
Jeffry A. Kelber - Plano TX, US
Assignee:
University of North Texas - Denton TX
International Classification:
H01L 29/08
H01L 35/24
H01L 51/00
US Classification:
257 40, 257 24, 257415, 257 76, 257410, 257418, 42725538, 427255394, 4272557
Abstract:
Disclosed is a substrate-mediated assembly for graphene structures. According to an embodiment, long-range ordered, multilayer BN(111) films can be formed by atomic layer deposition (ALD) onto a substrate. The subject BN(111) films can then be used to order carbon atoms into a graphene sheet during a carbon deposition process.

Graphene Formation On Dielectrics And Electronic Devices Formed Therefrom

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US Patent:
20120168721, Jul 5, 2012
Filed:
Dec 29, 2010
Appl. No.:
12/980763
Inventors:
JEFFRY A. KELBER - Plano TX, US
Sneha Sen Gaddam - Denton TX, US
Cameron L. Bjelkevig - Rio Rancho NM, US
Assignee:
University of North Texas - Denton TX
International Classification:
H01L 29/66
H01L 21/04
US Classification:
257 29, 438479, 257E29168, 257E21041, 977734
Abstract:
Methods of forming a graphene-based device are provided. According to an embodiment, a graphene-based device can be formed by subjecting a substrate having a dielectric formed thereon to a chemical vapor deposition (CVD) process using a cracked hydrocarbon or a physical vapor deposition (PVD) process using a graphite source; and performing an annealing process. The annealing process can be performed to temperatures of 1000 K or more. The cracked hydrocarbon of the CVD process can be cracked ethylene. In accordance with one embodiment, the application of the cracked ethylene to a MgO(111) surface followed by an annealing under ultra high vacuum conditions can result in a structure on the MgO(111) surface of an ordered graphene film with an oxidized carbon-containing interfacial layer therebetween. In another embodiment, the PVD process can be used to form single or multiple monolayers of graphene.

Coherent Spin Field Effect Transistor

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US Patent:
20130175588, Jul 11, 2013
Filed:
Jan 5, 2012
Appl. No.:
13/343970
Inventors:
JEFFRY KELBER - DENTON TX, US
PETER DOWBEN - LINCOLN NE, US
Assignee:
QUANTUM DEVICES CORP. - POTOMAC MD
International Classification:
H01L 29/78
H01L 21/336
US Classification:
257295, 438 3, 257E29255, 257E21436
Abstract:
A coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A magnetic oxide layer is formed on the cobalt by annealing at temperatures on the order of 1000 K to provide a few monolayer thick layer. Where the gate is cobalt, the resulting magnetic oxide is CoO(111). Other magnetic materials and oxides may be employed. A few ML field of graphene is deposited on the cobalt (III) oxide by molecular beam epitaxy, and a source and drain are deposited of base material. The resulting device is scalable, provides high on/off rates, is stable and operable at room temperature and easily fabricated with existing technology.

Grahene Field Effect Transistor

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US Patent:
20130248824, Sep 26, 2013
Filed:
Mar 22, 2012
Appl. No.:
13/426823
Inventors:
Jeffry Kelber - Denton TX, US
Assignee:
QUANTUM DEVICES, LLC - POTOMAC MD
International Classification:
H01L 29/78
H01L 21/336
B82Y 99/00
US Classification:
257 29, 438197, 257E29255, 977734, 257E21409
Abstract:
Graphene FETs exhibit low power consumption and high switching rates taking advantage of the excellent mobility in graphene deposited on a rocksalt oxide (111) by chemical vapor deposition, plasma vapor deposition or molecular beam epitaxy. A source, drain and electrical contacts are formed on the graphene layer. These devices exhibit band gap phenomena on the order of greater than about 0.5 eV, easily high enough to serve as high speed low power logic devices. Integration of this construction technology, based on the successful deposition of few layer graphene on the rocksalt oxide (111) with SI CMOS is straightforward.

Films For Use In Microelectronic Devices And Methods Of Producing Same

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US Patent:
61140325, Sep 5, 2000
Filed:
Apr 10, 1998
Appl. No.:
9/058474
Inventors:
Jeffry A. Kelber - Plano TX
Assignee:
The University of North Texas - Denton TX
International Classification:
B32B 712
US Classification:
428336
Abstract:
The present invention provides thin films for use in microelectronic devices. In one aspect, the present invention provides a copper diffusion barrier. In another aspect, the present invention provides a polymer film for various applications including use as a dielectric insulator and surface modification layers. Methods for the production of the films are also disclosed.
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Jeffry A Kelber from Plano, TX, age ~72 Get Report