Jeffrey L Sharp

6399871, Jun 4, 2002

Dec 29, 2000

09/751864

Jeffrey W. Sharp - Richardson TX

Marlow Industries, Inc. - Dallas TX

H01L 3500

136201, 136203, 136205, 136238, 136239, 136240

Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1. 5 or greater. Examples of such compounds include Tl SnTe , Tl GeTe , K SnTe and Rb SnTe. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity ( ). The first substructure of anion chains indicates significant anisotropy in the thermoelectric characteristics of the resulting semiconductor materials.

6660925, Dec 9, 2003

Jun 1, 2001

09/872394

Jeffrey W. Sharp - Richardson TX

Marlow Industries, Inc. - Dallas TX

H01L 3534

136201, 136203

A method of forming thermoelectric materials includes combining at least one P-type extrusion with at least one N-type extrusion to form a first P/N-type billet. The P/N-type billet may be extruded to form a first P/N-type extrusion having at least one P-type region, and at least one N-type region. The P/N-type extrusion may be segmented into a plurality of P/N-type extrusion segments. In a particular embodiment, a plurality of the P/N-type extrusion segments may be combined to form a second P/N-type billet. The second P/N-type billet may be extruded to form a second P/N-type extrusion having a second plurality of P-type regions and a second plurality of N-type regions.

7619158, Nov 17, 2009

Jul 22, 2004

10/897871

Jeffrey W. Sharp - Richardson TX, US
James L. Bierschenk - Rowlett TX, US
Joshua E. Moczygemba - Wylie TX, US

Marlow Industries, Inc. - Dallas TX

H01L 35/34
H01L 21/00

136201, 438113

A method of forming a thermoelectric device includes extruding a P/N-type billet to form a P/N-type extrusion having a first plurality of P-type regions and a first plurality of N-type regions. The P/N-type extrusion is sliced into a plurality of P/N-type wafers. A diffusion barrier metallization is applied to at least a subset of the P-type regions and N-type regions. One side of at least one P/N-type wafer is attached to a temporary substrate. The P/N-type regions of the P/N-type wafer are separated into an array of isolated P-type and N-type elements. The array of elements are coupled to a first plate having a first patterned metallization to form a thermoelectric circuit. The temporary substrate and bonding media may be detached from the P-type and N-type elements. The thermoelectric circuit may be coupled with a second plate at a second end of the thermoelectric circuit, second plate having a second patterned metallization.

7763792, Jul 27, 2010

Feb 14, 2005

11/058029

Jeffrey W. Sharp - Richardson TX, US
James L. Bierschenk - Rowlett TX, US

Marlow Industries, Inc. - Dallas TX

H01L 35/28

136224, 136200

A thermoelectric module is provided that includes a first thermally conductive plate with a first array of thermoelectric elements coupled to it. The first array of thermoelectric elements includes a first plurality of thermoelectric elements. The thermoelectric module also includes a second thermally conductive plate coupled to the first array of thermoelectric elements, and a second array of thermoelectric elements coupled to the second plate. The second array of thermoelectric elements includes a second plurality of thermoelectric elements. A third thermally conductive plate is coupled to the second array of thermoelectric elements. The thermoelectric module also includes a portion of each thermoelectric element of the first and second pluralities of thermoelectric elements being coplanar with at least a portion of every other thermoelectric element of the first and second pluralities of thermoelectric elements.

20040079407, Apr 29, 2004

Dec 5, 2003

10/729610

Jeffrey Sharp - Richardson TX, US

Marlow Industries, Inc., a Texas corporation

H01L035/12
E04B001/74

136/236100, 252/062000

A method of forming thermoelectric materials includes combining at least one P-type extrusion with at least one N-type extrusion to form a first P/N-type billet. The P/N-type billet may be extruded to form a first P/N-type extrusion having at least one P-type region, and at least one N-type region. The P/N-type extrusion may be segmented into a plurality of P/N-type extrusion segments. In a particular embodiment, a plurality of the P/N-type extrusion segments may be combined to form a second P/N-type billet. The second P/N-type billet may be extruded to form a second P/N-type extrusion having a second plurality of P-type regions and a second plurality of N-type regions.

20130032189, Feb 7, 2013

Aug 3, 2011

13/197260

Joshua E. Moczygemba - Wylie TX, US
James L. Bierschenk - Rowlett TX, US
Jeffrey W. Sharp - Murphy TX, US

MARLOW INDUSTRIES, INC. - Dallas TX

H01L 35/32
B23K 1/20
B23K 11/16
H01L 35/34

136224, 136201, 228203, 219118

In accordance with one embodiment of the present disclosure, a thermoelectric device includes a plurality of thermoelectric elements that each include a diffusion barrier. The diffusion barrier includes a refractory metal. The thermoelectric device also includes a plurality of conductors coupled to the plurality of thermoelectric elements. The plurality of conductors include aluminum. In addition, the thermoelectric device includes at least one plate coupled to the plurality of thermoelectric elements using a braze. The braze includes aluminum.

6169245, Jan 2, 2001

May 4, 1999

9/305111

Jeffrey W. Sharp - Richardson TX

Marlow Industries, Inc. - Dallas TX

H01L 3530

136205

Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1. 5 or greater. Examples of such compounds include Tl. sub. 2 SnTe. sub. 5, Tl. sub. 2 GeTe. sub. 5, K. sub. 2 SnTe. sub. 5 and Rb. sub. 2 SnTe. sub. 5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te. sub. 5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (. kappa. sub. g). The first substructure of anion chains indicates significant anisotropy in the thermoelectric characteristics of the resulting semiconductor materials.

20150333243, Nov 19, 2015

Sep 22, 2014

14/493037

- Dallas TX, US
James L. Bierschenk - Rowlett TX, US
Jeffrey W. Sharp - Murphy TX, US

H01L 35/08
H01L 35/20
H01L 35/34
H01L 35/32

In accordance with one embodiment of the present disclosure, a thermoelectric device includes a plurality of thermoelectric elements that each include a diffusion barrier. The diffusion barrier includes a refractory metal. The thermoelectric device also includes a plurality of conductors coupled to the plurality of thermoelectric elements. The plurality of conductors include aluminum. In addition, the thermoelectric device includes at least one plate coupled to the plurality of thermoelectric elements using a braze. The braze includes aluminum.