Jeanette A Roberts

7226718, Jun 5, 2007

Sep 15, 2005

11/228589

Heidi B. Cao - Portland OR, US
Wang Yueh - Portland OR, US
Jeanette M. Roberts - Portland OR, US

Intel Corporation - Santa Clara CA

G03F 7/039
G03F 7/38
G03F 7/30

4302701, 430330, 430905, 430326

Numerous embodiments of a method to prevent outgassing from a low activation energy photoresist are described. In one embodiment of the present invention, a photoresist material is dispensed over a substrate to form a photoresist layer. The photoresist layer includes branched polymers coupled with acetal or ketal linkages. An exposed portion of the photoresist layer is exposed to a radiation treatment to cleave the acetal or ketal linkages and separate the branched polymers. The photoresist layer is baked at a temperature below about 100 C. , and the separated branched polymers are too large to outgass from the photoresist layer.

20060292500, Dec 28, 2006

Jun 24, 2005

11/165717

Jeanette Roberts - Portland OR, US
Heidi Cao - Portland OR, US
Wang Yueh - Portland OR, US

G03F 7/26

430322000, 430328000

Numerous embodiments of a method to increase the mechanical strength of a photoresist structure are described. In one embodiment of the present invention, a photoresist material is dispensed over a substrate to form a photoresist layer. The photoresist material is exposed to a first radiation treatment to define a pattern to be formed on the photoresist layer. A developer solution is applied to the photoresist material to form the pattern and rinsed with a rinse solution to remove the developer solution. The photoresist material is exposed to a second radiation treatment to induce cross-linking.

20070122734, May 31, 2007

Nov 14, 2005

11/273667

Jeanette Roberts - Portland OR, US
Heidi Cao - Portland OR, US
Wang Yueh - Portland OR, US

G03C 1/00

430270100

In one embodiment, a photoacid generator is attached to a primary resist molecule having a radius of gyration of less than about 3 nanometers, the primary molecule other than a traditional photoresist polymer. This embodiment may have increased homogeneity and decreased acid diffusion, which may increase the sensitivity of the resist and decrease line width roughness.

20080076058, Mar 27, 2008

Aug 11, 2006

11/502916

Michael J. Leeson - Portland OR, US
Heidi B. Cao - Portland OR, US
Wang Yueh - Portland OR, US
Jeanette M. Roberts - Portland OR, US

G03F 7/004

4302701

A photoresist composition (phosphoresist) including a resist capable of activation when exposed to electromagnetic energy within a first bandwidth, but relatively insensitive to electromagnetic energy within a second bandwidth and a third bandwidth, and also including a phosphor material included in the photoresist and capable of activation when exposed to electromagnetic energy within the second bandwidth. Photo-luminescent centers included in the phosphoresist are associated with the phosphor material and are capable of emitting luminescence within the first bandwidth in response to exposure to electromagnetic energy within the third bandwidth. The phosphoresist may be disposed as a relatively thin and uniform layer at a surface of a substrate, such as a semiconductor substrate.

20220216305, Jul 7, 2022

Mar 25, 2022

17/704906

- Santa Clara CA, US
Ravi Pillarisetty - Portland OR, US
Kanwaljit Singh - Rotterdam, NL
Hubert C. George - Portland OR, US
David J. Michalak - Portland OR, US
Lester Lampert - Portland OR, US
Zachary R. Yoscovits - Beaverton OR, US
Roman Caudillo - Portland OR, US
Jeanette M. Roberts - North Plains OR, US
James S. Clarke - Portland OR, US

Intel Corporation - Santa Clara CA

H01L 29/12
H01L 29/78
H01L 29/10
H01L 29/423
H01L 29/66
H01L 21/28
H01L 23/46
H01L 29/43
G06N 10/00
B82Y 10/00
H01L 29/76
H01L 29/40

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; a first gate above the quantum well stack, wherein the first gate includes a first gate metal and a first gate dielectric; and a second gate above the quantum well stack, wherein the second gate includes a second gate metal and a second gate dielectric, and the first gate is at least partially between a portion of the second gate and the quantum well stack.

20210376102, Dec 2, 2021

Aug 13, 2021

17/401692

- Santa Clara CA, US
Van H. Le - Beaverton OR, US
Jeanette M. Roberts - North Plains OR, US
David J. Michalak - Portland OR, US
James S. Clarke - Portland OR, US
Zachary R. Yoscovits - Beaverton OR, US

Intel Corporation - Santa Clara CA

H01L 29/423
H01L 29/417
H01L 29/66
H01L 29/775
H01L 29/78
H01L 29/06

Disclosed herein are quantum dot devices with trenched substrates, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a substrate having a trench disposed therein, wherein a bottom of the trench is provided by a first material, and a quantum well stack at least partially disposed in the trench. A material of the quantum well stack may be in contact with the bottom of the trench, and the material of the quantum well stack may be different from the first material.

20210343845, Nov 4, 2021

Jul 6, 2021

17/368427

- Santa Clara CA, US
Ravi Pillarisetty - Portland OR, US
Jeanette M. Roberts - North Plains OR, US
Nicole K. Thomas - Portland OR, US
James S. Clarke - Portland OR, US

Intel Corporation - Santa Clara CA

H01L 29/40
H01L 29/12
H01L 29/66
H01L 29/423
H01L 29/76
H01L 23/532
B82Y 40/00
B82Y 10/00

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack structure of a quantum dot device, wherein the quantum well stack structure includes an insulating material to define multiple rows of quantum dot formation regions; and a gate that extends over multiple ones of the rows.

20210328019, Oct 21, 2021

Jul 1, 2021

17/364985

- Santa Clara CA, US
James S. Clarke - Portland OR, US
Jessica M. Torres - Portland OR, US
Ravi Pillarisetty - Portland OR, US
Kanwaljit Singh - Rotterdam, NL
Payam Amin - Portland OR, US
Hubert C. George - Portland OR, US
Jeanette M. Roberts - North Plains OR, US
Roman Caudillo - Portland OR, US
David J. Michalak - Portland OR, US
Zachary R. Yoscovits - Beaverton OR, US
Lester Lampert - Portland OR, US

Intel Corporation - Santa Clara CA

H01L 29/12
H01L 21/8234
H01L 27/088
H01L 29/66
H01L 29/82

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer, wherein the quantum well layer includes an isotopically purified material; a gate dielectric above the quantum well stack; and a gate metal above the gate dielectric, wherein the gate dielectric is between the quantum well layer and the gate metal.