Jay Jiunn Chen

8094428, Jan 10, 2012

Oct 27, 2008

12/259216

Yi Xiang Wang - Fremont CA, US
Juying Dou - San Jose CA, US
Kenichi Kanai - Palo Alto CA, US
Jun Jiang - Fremont CA, US
Zheng Fan - Beijing, CN
Qingyu Meng - Beijing, CN
Jay Chen - Fremont CA, US

Hermes-Microvision, Inc. - Hsinchu

H01L 21/683

361234

An apparatus for increasing electric conductivity to a wafer substrate, when exposed to electron beam irradiation, is disclosed. More specifically, a methodology to breakdown the insulating layer on wafer backside is provided to significantly reduce the damage on the wafer backside while proceeding with the grounding process.

8217418, Jul 10, 2012

Feb 14, 2011

13/026698

Jay Chen - Saratoga CA, US
Justin Payne - San Jose CA, US
Michael Heuken - Aachen, DE

SiPhoton Inc. - San Jose CA

H01L 33/00

257103, 257 79, 257 80, 257 98, 257E33003

A light emitting device includes a silicon substrate comprising a (111) surface and a GaN crystal structure over the (111) surface of the silicon substrate. The GaN crystal structure includes a first surface along a semi-polar plane of the GaN crystal structure and a second surface along a polar plane of the GaN crystal structure. The light emitting device also includes light emission layers over the first surface of the GaN crystal structure. The light emission layers include at least one quantum well comprising GaN.

8283676, Oct 9, 2012

May 18, 2010

12/782080

Jay Chen - Saratoga CA, US

SiPhoton Inc. - San Jose CA

H01L 27/15

257 79, 438 26, 438 27, 438 28, 438 29, 257E33023, 257E33025, 257 13, 257 14

A method for fabricating a light emitting device includes forming a trench in a first surface on a first side of a substrate. The trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second side opposite to the first side of the substrate. The method also includes forming light emission layers over the first trench surface and the first surface, wherein the light emission layer is configured to emit light and removing at least a portion of the substrate from the second side of the substrate to form a protrusion on the second side of the substrate to allow the light emission layer to emit light out of the protrusion on the second side of the substrate.

8624292, Jan 7, 2014

Jun 8, 2011

13/155857

Jay Chen - Saratoga CA, US
Justin A. Payne - San Jose CA, US
Michael Heuken - Aachen, DE

SiPhoton Inc. - Palo Alto CA

H01L 33/00

257103, 257 79, 257 80, 257 98, 257E33003

A light emitting device includes a silicon substrate having a (100) upper surface. The (100) upper surface has a recess, the recess being defined in part by (111) surfaces of the silicon substrate. The light emitting device includes a GaN crystal structure over one of the (111) surfaces which has a non-polar plane and a first surface along the non-polar plane. Light emission layers over the first surface have at least one quantum well comprising GaN.

20030184750, Oct 2, 2003

Sep 24, 2002

10/253037

David Aikens - Pleasanton CA, US
Jay Chen - Fremont CA, US
Lanhua Wei - Fremont CA, US

G01J004/00

356/369000

An ellipsometer or reflectometer includes a light source creating a mono or polychromatic probe beam. The probe beam is focused by one or more lenses to create an illumination spot on the surface of the subject under test. A second lens (or lenses) images the illumination spot (or a portion of the illumination spot) to a detector. The detector captures (or otherwise processes) the received image. A processor analyzes the data collected by the detector. An aperture is positioned along the beam bath between the light source and the detector. The aperture has an elliptical shape to give the image received by the detector a circular shape. The circular shape maximizes the amount of energy that may be received using a square test area.

20120241809, Sep 27, 2012

Jun 6, 2012

13/489955

Jay Chen - Saratoga CA, US

SIPHOTON INC. - San Jose CA

H01L 33/60
H01L 33/36

257 99, 438 29, 257E33062, 257E33072

A method for fabricating a light emitting device includes forming a trench in a first surface on first side of a substrate. The trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second surface opposite to the first surface of the substrate. The method also includes forming alight emission layer over the first trench surface, but not over the remainder of the first substrate surface, and removing at least a portion of the substrate from the second side of the substrate to expose the light emission layer and allow it to emit light out of the protrusion or protrusions on the second side of the substrate. These protrusions may be elongated pyramids.

20210247701, Aug 12, 2021

May 21, 2019

17/053255

- Veldhoven, NL
Chi-Hsiang FAN - San Jose CA, US
Adbalmohsen ELMALK - Eindhoven, NL
Youping ZHANG - Cupertino CA, US
Jay Jianhui CHEN - Fremont CA, US
Kui-Jun HUANG - Shenzhen, CN

ASMI NETHERLANDS B.V. - Veldhoven

G03F 7/20

A method for determining a stack configuration for a substrate subjected to a patterning process. The method includes obtaining (i) measurement data of a stack configuration with location information on a printed substrate, (ii) a substrate model configured to predict a stack characteristic based on a location of the substrate, and (iii) a stack map including a plurality of stack configurations based on the substrate model. The method iteratively determines values of model parameters of the substrate model based on a fitting between the measurement data and the plurality of stack configurations of the stack map, and predicts an optimum stack configuration at a particular location based on the substrate model using the values of the model parameters.

20210097452, Apr 1, 2021

Sep 21, 2020

16/948484

- San Francisco CA, US
Jay A. Chen - Fremont CA, US
Shenglong Gao - San Francisco CA, US

G06Q 10/02
G06Q 30/02
G06Q 30/06
G06Q 10/06
G06Q 50/30

Aspects of the present disclosure include systems, methods, and devices to auction-based on-demand transport selection. A transport request is received from a requesting user of a transport service region. A subset of transport providers to service the transport request are determined from transport providers that service the transport service region. A transport provider is selected to service the transport request based in part on a combination of a proposed cost to service the transport request and a proposed price to be paid in exchange for utilizing one or more pick-up/drop-off zones (PDZs) in servicing the request. The proposed cost to complete the transport request and the proposed price to be paid for utilizing one or more PDZs are specified by the transport provider. A transport assignment is transmitted to the selected transport provider to cause the selected transport provider to service the transport request.