Search

Jan Nedbal

from Morgan Hill, CA
Get Report
Also known as:
Jon Nedbal
Phone and address:
17431 Holiday Dr, Morgan Hill, CA 95037
Connected to:
Christina A Nedbal, 52Carla Nedbalek, 61David A Nedbalek, 45Jonathan L Nedbalek, 48Richard A Nedbalek, 57Mary L Nedbalski, 67Scott M Nedbeck, 47Aaron E Nedd, 45Alfred M Nedd, 63Benjamin F Nedd, 59

Jan Nedbal Phones & Addresses

  • 17431 Holiday Dr, Morgan Hill, CA 95037
  • 475 W San Carlos St APT 9103, San Jose, CA 95110
  • 1061 Huntingdon Dr, San Jose, CA 95129 (408) 252-8211
  • 1061 Huntingdon Dr, San Jose, CA 95129

Work

Company: Honeywell 1996 to 2012 Position: R and d scientist

Education

Degree: Associate degree or higher

Industries

Electrical/Electronic Manufacturing

Resumes

Resumes

Jan Nedbal Photo 1

Jan Nedbal

View page
Location:
San Jose, CA
Industry:
Electrical/Electronic Manufacturing
Work:
Honeywell 1996 - 2012
R and D Scientist

Publications

Us Patents

Organosiloxanes

View page
US Patent:
6962727, Nov 8, 2005
Filed:
Jun 3, 2002
Appl. No.:
10/161561
Inventors:
William B. Bedwell - San Jose CA, US
Nigel P. Hacker - Palo Alto CA, US
Roger Y. Leung - San Jose CA, US
Nancy Iwamoto - Ramona CA, US
Jan Nedbal - San Jose CA, US
Songyuan Xie - Newark CA, US
Lorenza Moro - Palo Alto CA, US
Shyama P. Mukherjee - Morgan Hill CA, US
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
C23C016/56
US Classification:
42725518, 427489, 427503, 528 31, 528 32, 528 43
Abstract:
The present invention provides an organosiloxane comprising at least 80 weight percent of Formula 1: [YSiO]{ZSiO][HSiO](where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula 1; b is from 2 percent to 50 percent of Formula 1; and c is from 20 percent to 80 percent of Formula 1. The present organosiloxane may be used as ceramic binder, high temperature encapsulant, and fiber matrix binder. The present composition is also useful as an adhesion promoter in that it exhibits good adhesive properties when coupled with other materials in non-microelectronic or microelectronic applications. Preferably, the present compositions are used in microelectronic applications as etch stops, hardmasks, and dielectrics.

Organosiloxanes

View page
US Patent:
7011889, Mar 14, 2006
Filed:
Feb 19, 2002
Appl. No.:
10/078919
Inventors:
William B. Bedwell - San Jose CA, US
Nigel P. Hacker - Palo Alto CA, US
Roger Y. Leung - San Jose CA, US
Nancy Iwamoto - Ramona CA, US
Jan Nedbal - San Jose CA, US
Songyuan Xie - Newark CA, US
Lorenza Moro - Palo Alto CA, US
Shyama P. Mukherjee - Morgan Hill CA, US
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
B32B 9/04
US Classification:
428447, 428448, 528 31, 528 32, 528 43
Abstract:
The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: [YSiO][ZSiO][HSiO]where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I. The present composition is useful in semiconductor devices and may be advantageously used as an etch stop.

Compositions For Forming Doped Regions In Semiconductor Substrates, Methods For Fabricating Such Compositions, And Methods For Forming Doped Regions Using Such Compositions

View page
US Patent:
8324089, Dec 4, 2012
Filed:
Jul 20, 2010
Appl. No.:
12/839924
Inventors:
Roger Yu-Kwan Leung - San Jose CA, US
Wenya Fan - Campbell CA, US
Jan Nedbal - San Jose CA, US
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
H01L 21/385
US Classification:
438563, 257E21468, 252194
Abstract:
Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions are provided. In one embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a moisture adsorption-minimizing component. In another embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a high boiling point material selected from the group consisting of glycol ethers, alcohols, and combinations thereof. The high boiling point material has a boiling point of at least about 150 C.

Thick Crack-Free Silica Film By Colloidal Silica Incorporation

View page
US Patent:
20070099005, May 3, 2007
Filed:
Oct 31, 2005
Appl. No.:
11/262588
Inventors:
Roger Leung - San Jose CA, US
Jan Nedbal - San Jose CA, US
Jinghong Chen - Santa Clara CA, US
Amanuel Gebrebrhan - San Carlos CA, US
Beth Munoz - San Jose CA, US
International Classification:
B32B 9/04
C08G 77/08
US Classification:
428447000, 428429000, 428450000, 528021000, 528023000
Abstract:
The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices, in particular for flat panel displays. A substantially crack-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer, colloidal silica, an optional catalyst, and optional water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating to produce a substantially crack-free silicon polymer film, having a thickness of from about 700 Å to about 20,000 Å, and a transparency to light in the range of about 400 nm to about 800 nm of about 90% or more.

Thermal Interconnect And Interface Materials, Methods Of Production And Uses Thereof

View page
US Patent:
20080291634, Nov 27, 2008
Filed:
May 21, 2008
Appl. No.:
12/124998
Inventors:
Martin W. Weiser - Liberty Lake WA, US
Kikue S. Burnham - San Ramon CA, US
Roger Y. Leung - San Jose CA, US
Jan Nedbal - San Jose CA, US
Ravi Rastogi - Liberty Lake WA, US
International Classification:
H05K 7/20
US Classification:
361708, 361712
Abstract:
Thermal interface materials are disclosed that include at least one matrix material component, at least one high conductivity filler component, at least one solder material; and at least one material modification agent, wherein the at least one material modification agent improves the thermal performance, compatibility, physical quality or a combination thereof of the thermal interface material. Methods of forming thermal interface materials are also disclosed that include providing each of the at least one matrix material component, at least one high conductivity filler, at least one solder material and at least one material modification agent, blending the components; and optionally curing the components pre- or post-application of the thermal interface material to the surface, substrate or component. Also, thermal interface materials are disclosed that include at least one matrix material component, at least one high conductivity filler component, at least one solder material; and at least one material modification agent, wherein the at least one material modification agent at least one modified thermal filler profile.

Solvents For Processing Silsesquioxane And Siloxane Resins

View page
US Patent:
62874772, Sep 11, 2001
Filed:
Oct 18, 1999
Appl. No.:
9/420091
Inventors:
Nigel P. Hacker - Palo Alto CA
Jan Nedbal - San Jose CA
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
B44C 122
US Classification:
216 83
Abstract:
Methods for removing unwanted siloxane and silsesquioxane dielectric film precursor residues from substrates and spin on coating devices are provided. The methods of the invention use liquid silicones to dissolve the film precursors. Solutions of the film precursors in the silicones do not undergo gelling or increase in molecular weight.
Control profile
Jan Nedbal from Morgan Hill, CA Get Report