Inventors:
Jammy C. Huang - Andover MA
Mordechai Rothschild - Newton MA
Barry E. Burke - Lexington MA
Daniel J. Ehrlich - Lexington MA
Bernard B. Kosicki - Acton MA
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
H01L 2978
H01L 2714
H01L 3100
Abstract:
A surface electron barrier region is formed on a semiconductor membrane device by a single step laser process which produces a sharp doping profile in a surface region above the light penetration depth. Enhanced quantum efficiency is observed, and by selectively forming barrier layers of differing depth, a CCD device architecture for two-color sensitivity is achieved. The barrier layer results in enhanced membrane-type and radiation hardened bipolar and CMOS devices.