James Douglas Spain

6794272, Sep 21, 2004

Mar 18, 2003

10/390977

Terry R. Turner - Austin TX
James D. Spain - Georgetown TX
Richard M. Banks - Austin TX

iFire Technologies, Inc. - Austin TX

H01L 2178

438459, 438464, 438691, 438977

A method for manufacturing integrated circuits uses an atmospheric magnetic mirror plasma etching apparatus to thin a semiconductor wafer. In addition the process may, while thinning, both segregate and expose through-die vias for an integrated circuit chip. To segregate, the wafer may be partially diced. Then, the wafer may be tape laminated. Next, the backside of the wafer may be etched. As the backside material is removed, the partial dicing and through-die vias may be exposed. As such, the method reduced handling steps and increases yield. Furthermore, the method may be used in association with wafer level processing and flip chip with bump manufacturing.

7118992, Oct 10, 2006

Aug 9, 2004

10/914248

Terry R. Turner - Austin TX, US
James D. Spain - Georgetown TX, US
Richard M. Banks - Austin TX, US

iFire Technologies, Inc. - Austin TX

H01L 21/461
H01L 21/78

438459, 438462, 438732, 20429837

A method for manufacturing integrated circuits uses an atmospheric magnetic mirror plasma etching apparatus to thin a semiconductor wafer. In addition the process may, while thinning, both segregate and expose through-die vias for an integrated circuit chip. To segregate, the wafer may be partially diced. Then, the wafer may be tape laminated. Next, the backside of the wafer may be etched. As the backside material is removed, the partial dicing and through-die vias may be exposed. As such, the method reduced handling steps and increases yield. Furthermore, the method may be used in association with wafer level processing and flip chip with bump manufacturing.

7728250, Jun 1, 2010

May 21, 2004

10/851423

Terry R. Turner - Austin TX, US
Rodney A. Herman - Austin TX, US
Duane T. Smith - Round Rock TX, US
James D. Spain - Georgetown TX, US

Inficon, Inc. - Syracuse NY

B23K 10/00

21912143, 21912148, 118723 I, 31511151

A clamp assembly for bringing an RF sensor into electrical contact with an RF current carrier is provided herein. The clamp assembly () comprises a first wedge-shaped element (), and a second wedge-shaped element () which is slidingly engaged with said first wedge-shaped element. Preferably, the clamp assembly also comprises a collar () within which the first and second wedge-shaped elements are disposed. The clamp assembly preferably further comprises a fastener (), such as a screw, which adjoins the first and second elements, in which case the clamp assembly is adapted such that, as the screw is rotated in a first direction, at least one of the first and second elements expands against the collar and/or the RF current carrier.

7821250, Oct 26, 2010

Jul 31, 2006

11/496277

Terry A. Turner - Austin TX, US
Rodney A. Herman - Austin TX, US
Duane T. Smith - Round Rock TX, US
James D. Spain - Georgetown TX, US

Inficon, Inc. - Syracuse NY

G01R 25/02

324 95

A clamp assembly for bringing an RF sensor into electrical contact with an RF current carrier is provided herein. The clamp assembly () comprises a first wedge-shaped element (), and a second wedge-shaped element () which is slidingly engaged with said first wedge-shaped element. Preferably, the clamp assembly also comprises a collar () within which the first and second wedge-shaped elements are disposed. The clamp assembly preferably further comprises a fastener (), such as a screw, which adjoins the first and second elements, in which case the clamp assembly is adapted such that, as the screw is rotated in a first direction, at least one of the first and second elements expands against the collar and/or the RF current carrier.

20030082847, May 1, 2003

Apr 26, 2002

10/133296

Terry Turner - Austin TX, US
James Spain - Georgetown TX, US
Richard Banks - Austin TX, US

i-Fire Technologies, Inc. - Austin TX

H01L021/44
H01L021/4763

438/106000, 438/110000, 438/108000, 438/459000

The invention is directed to a method for manufacturing integrated circuits. In one exemplary embodiment, the method uses an atmospheric plasma etching apparatus to thin a semiconductor wafer. In addition the process may, while thinning, both segregate and expose through-die vias for an integrated circuit chip. To segregate, the wafer may be partially diced. Then, the wafer may be tape laminated. Next, the backside of the wafer may be etched. As the backside material is removed, the partial dicing and through-die vias may be exposed. As such, the method reduced handling steps and increases yield. Furthermore, the method may be used in association with wafer level processing and flip chip with bump manufacturing.

20060084397, Apr 20, 2006

Sep 30, 2004

10/954459

Terry Turner - Austin TX, US
Rodney Herman - Austin TX, US
Duane Smith - Round Rock TX, US
James Spain - Georgetown TX, US

H04B 1/38

455117000, 455090100, 455300000

An RF sensor is provided herein. The sensor comprises a clamping mechanism (), a metal collar () disposed about the clamping mechanism, an RF current transducer () having a transducer coil () disposed on a circuit board (), the RF current transducer being disposed adjacent to the collar, and a metal housing () for the transducer coil, the housing being mounted on the circuit board and having first and second open ends.

54725615, Dec 5, 1995

Mar 27, 1995

8/411116

Norman Williams - Austin TX
James Spain - Austin TX

Sematech, Inc. - Austin TX

H01L 21306
B44C 122

1566271

A RF sensor for monitoring voltage, current and phase angle of a RF signal being coupled to a plasma reactor. Outputs from the sensor are used to calculate various properties of the plasma. These values are then utilized to characterize the process and/or used to provide feedback for in-situ control of an ongoing plasma process.

59398868, Aug 17, 1999

Nov 18, 1996

8/751636

Terry Richard Turner - Austin TX
James Douglas Spain - Georgetown TX
John Rice Swyers - Austin TX

Advanced Energy Industries, Inc.

G01N 2766
G01N 2702
G01R 2704

324464

A plasma monitoring and control method and system monitor and control plasma in an electronic device fabrication reactor by sensing the voltage of the radio frequency power that is directed into the plasma producing gas at the input to the plasma producing environment of the electronic device fabrication reactor. The method and system further sense the current and phase angle of the radio frequency power directed to the plasma producing gas at the input to the plasma producing environment. Full load impedance is measured and used in determining characteristics of the plasma environment, including not only discharge and sheath impedances, but also chuck and wafer impedances, primary ground path impedance, and a secondary ground path impedance associated with the plasma environment. This permits end point detection of both deposition and etch processes, as well as advanced process control for electronic device fabrication. The invention also provides automatic gain control features for applying necessary signal gain control functions during the end point and advanced process control operations.