James G Schlueter

7182673, Feb 27, 2007

Jun 29, 2004

10/880945

Vishwas V. Hardikar - Phoenix AZ, US
James A. Schlueter - Phoenix AZ, US
Guangshun Chen - Phoenix AZ, US

Novellus Systems, Inc. - San Jose CA

B08B 11/00

451 41, 451 54

A method and apparatus are provided for post-CMP cleaning of a semiconductor work piece. The method comprises the steps of subjecting the work piece to a first cleaning composition having one of an acidic pH and a basic pH and subjecting the work piece to a second cleaning composition having an acidic pH, if the first cleaning composition has a basic pH and subjecting the work piece to a second cleaning composition having a basic pH, if the first cleaning composition has an acidic pH.

7195548, Mar 27, 2007

Feb 28, 2006

11/363640

Vishwas V. Hardikar - Phoenix AZ, US
James A. Schlueter - Phoenix AZ, US
Guangshun Chen - Phoenix AZ, US

Novellus Systems, Inc. - San Jose CA

H01L 21/00

451285

A method and apparatus are provided for post-CMP cleaning of a semiconductor work piece. The method comprises the steps of subjecting the work piece to a first cleaning composition having one of an acidic pH and a basic pH and subjecting the work piece to a second cleaning composition having an acidic pH, if the first cleaning composition has a basic pH and subjecting the work piece to a second cleaning composition having a basic pH, if the first cleaning composition has an acidic pH.

7678605, Mar 16, 2010

Aug 13, 2008

12/190882

James Allen Schlueter - Phoenix AZ, US
Bentley J. Palmer - Phoenix AZ, US

DuPont Air Products NanoMaterials LLC - Allentown PA

H01L 21/00

438 95, 438102, 438693, 257 42, 257214

A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e. g. , germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing.

20060102657, May 18, 2006

Nov 15, 2004

10/988864

Paul Naslund - St. Louis MO, US
James Schlueter - Dardenne Prairie MO, US

DEMA Engineering Company - St. Louis MO

B67D 5/60

222144000

An apparatus for selective eductive dispensing of multiple chemical fluids from separate fluid containers includes a motive fluid inlet; an eductor in fluid communication with said motive fluid inlet; a selector switch defining at least one inlet and an outlet therein, said inlet and outlet in fluid communication with one another and said outlet in fluid communication with said eductor and wherein said selector switch inlet is in selective fluid communication with said fluid containers depending on the position of the selector switch; and a valve located between said motive fluid inlet and said eductor, said valve selectively opened and closed by movement of said selector switch.

60959002, Aug 1, 2000

Mar 26, 1999

9/276983

Clinton O. Fruitman - Chandler AZ
Thomas K. Crosby - Gilbert AZ
James Schlueter - Phoenix AZ

Speedfam-IPEC - Chandler AZ

B24B 4106
B24B 100

451 28

A carrier for semiconductor wafers to be polished comprises a backing pad vulcanized to a pressure plate. The backing pad is formed of a rubber material such as neoprene, SBR or natural rubber. An adhesive film of a thermosetting, thermally reactive material forms an integral bond between the backing pad and pressure plate. The backing pad, adhesive film and pressure plate together comprise a nearly ideally elastic assembly. The exposed face of the backing pad is profiled to a desired profile without effecting crumbling of the rubber material.

59891041, Nov 23, 1999

Jan 12, 1998

9/005889

Inki Kim - Tempe AZ
Chris Karlsrud - Chandler AZ
John Natalicio - Los Angeles CA
James Schlueter - Phoenix AZ
Thomas K. Crosby - Gilbert AZ

SpeedFam-IPEC Corporation - Chandler AZ

B24B 100

451 41

A carrier for semiconductor wafers to be polished comprises a rigid upper housing, a rigid pressure plate and a gimbal mechanism connecting the plate and housing which permits the plate to gimbal or wobble relative to the housing. The pressure plate is a one-piece component and has a central cut-out portion in which the gimbal mechanism is disposed, thereby establishing a low gimbal point and reducing the incidence of tilting. The gimbal mechanism has an inner bearing ring which is fastened to the underside of the housing, and an outer bearing ring which is fastened to an outer portion of the pressure plate.

58726330, Feb 16, 1999

Feb 12, 1997

8/798803

Paul Holzapfel - Chandler AZ
James Schlueter - Phoenix AZ
Chris Karlsrud - Chandler AZ
Warren Lin - Fremont CA

Speedfam Corporation - Chandler AZ

G01B 1106
B24B 4912

356381

The present invention provides methods and apparatus which permit the in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a work piece, e. g. , a semiconductor wafer. A probe is disposed proximate to the outer perimeter of a polishing pad on a CMP table such that the probe establishes optical contact with the wafer surface as a portion of the wafer extends beyond the outer perimeter of the polishing pad. A nozzle may be provided to apply a stream of compressed air at the disk surface under inspection to thereby remove excess slurry from the local region of the workpiece being inspected. A broad band light source is employed in conjunction with a fiber optic cable to direct light at the wafer surface. A bifurcated probe is employed such that the light applied to the workpiece surface is reflected back to and captured by a corresponding optical sensor connected to a fiber optic cable. The captured reflected light received by the receptor sensor and fiber optic cable assembly is applied to a photospectrum meter which analyzes the reflected light.

20220372332, Nov 24, 2022

Sep 22, 2020

17/754038

- Tempe AZ, US
JAMES ALLEN SCHLUETER - Phoenix AZ, US
DNYANESH CHANDRAKANT TAMBOLI - Gilbert AZ, US

Versum Materials US, LLC - Tempe AZ

C09G 1/02
H01L 21/768
C09G 1/04

Present invention provides Chemical Mechanical Planarization (CMP) polishing compositions for barrier layer applications, specifically for improving With-In Die Non-Uniformities (WID-NU). The CMP polishing compositions contain abrasive at a concentration equal and/or greater than () 2.0 wt. %; a planarization agent selected from the group consisting of ethylene oxide, propylene oxide, butylene oxide, polymers thereof, derivatives thereof, and combinations thereof, wherein the polymers have a molecular weight between 10 Dalton to 5 million Dalton, preferably 50 Dalton to 1 million Dalton; corrosion inhibitor; water soluble solvent; and optionally, rate boosting agent, pH adjusting agent, oxidizing agent, and chelator.