James Quinlivan Phones & Addresses
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Port Jefferson Station, NY
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143 Granny Rd, Farmingville, NY 11738 (631) 255-4223
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Astoria, NY
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Montclair, NJ
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Coram, NY
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Middle Island, NY
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Hadley, NY
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Northville, NY
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Holtsville, NY
Ranks
Licence:
New York - Currently registered
Date:
1965
Specialities
Negligence Law • Tort • Municipal Law
Resumes
Resumes
James Quinlivan
View pagePublications
Us Patents
Method For Improved Plasma Nitridation Of Ultra Thin Gate Dielectrics
View pageUS Patent:
6893979, May 17, 2005
Filed:
Mar 15, 2001
Appl. No.:
09/809663
Inventors:
Mukesh V. Khare - White Plains NY, US
Christopher P. D'Emic - Ossining NY, US
Thomas T. Hwang - Wappingers Falls NY, US
Paul C. Jamison - Hopewell Junction NY, US
James J. Quinlivan - Essex Junction VT, US
Beth A. Ward - Essex Junction VT, US
Christopher P. D'Emic - Ossining NY, US
Thomas T. Hwang - Wappingers Falls NY, US
Paul C. Jamison - Hopewell Junction NY, US
James J. Quinlivan - Essex Junction VT, US
Beth A. Ward - Essex Junction VT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L021/31
H01L021/469
H01L021/469
US Classification:
438769, 438775, 438786
Abstract:
A method for forming a gate dielectric for an integrated circuit device. In an exemplary embodiment of the invention, the method includes forming an initial oxynitride layer upon a substrate material, the oxynitride layer having an initial physical thickness. The initial oxynitride layer is then subjected to a plasma nitridation, the plasma nitridation resulting in final oxynitride layer having a final physical thickness.
Nitrided Ultra Thin Gate Dielectrics
View pageUS Patent:
7109559, Sep 19, 2006
Filed:
Nov 5, 2004
Appl. No.:
10/982999
Inventors:
Mukesh V. Khare - White Plains NY, US
Christopher P. D'Emic - Ossining NY, US
Thomas T. Hwang - Wappingers Falls NY, US
Paul C. Jamison - Hopewell Junction NY, US
James J. Quinlivan - Essex Junction VT, US
Beth A. Ward - Essex Junction VT, US
Christopher P. D'Emic - Ossining NY, US
Thomas T. Hwang - Wappingers Falls NY, US
Paul C. Jamison - Hopewell Junction NY, US
James J. Quinlivan - Essex Junction VT, US
Beth A. Ward - Essex Junction VT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 29/76
H01L 29/94
H01L 29/94
US Classification:
257411, 257649
Abstract:
A method for forming a gate dielectric for an integrated circuit device. In an exemplary embodiment of the invention, the method includes forming an initial oxynitride layer upon a substrate material, the oxynitride layer having an initial physical thickness. The initial oxynitride layer is then subjected to a plasma nitridation, the plasma nitridation resulting in final oxynitride layer having a final physical thickness.