Search

James W Klawinsky

from Murphy, TX
Age ~50
Get Report
Also known as:
James Wayne Klawinsky, James M Klawinsky, James W Klawinski, James Y
Phone and address:
631 Candlewood Trl, Plano, TX 75094
(214) 882-1095
Related to:
Leon L Klawinsky, 98Moemil McmahonRobert Wilson, 95Melisa K Wilson, 52Leroy Wilson, 46Patrick Mcdonald, 52
Connected to:
David M Klawinski, 42Richard A Klawinski, 66Rion P Klawinski, 77Tyler T Klawinski, 34Lynda S Klawiter, 80Amy E Klawitter, 53David A Klawitter, 41Dayna R Klawitter, 54Deanna L Klawitter, 45Elizabeth D Klawitter, 69

James Klawinsky Phones & Addresses

  • 631 Candlewood Trl, Plano, TX 75094 (214) 882-1095
  • Murphy, TX
  • Houston, TX
  • 1217 Rogers Rd, Irving, TX 75060 (972) 790-8283
  • College Station, TX
  • Colton, TX

Work

Company: Texas instruments Position: Thinfilm process engineer

Industries

Semiconductors

Resumes

Resumes

James Klawinsky Photo 1

Thinfilm Process Engineer

View page
Location:
Plano, TX
Industry:
Semiconductors
Work:
Texas Instruments
Thinfilm Process Engineer

Business Records

Name / Title
Company / Classification
Phones & Addresses
James Klawinsky
President
Skippy'w Used Cars & Battery Service Inc
Retails Auto Parts
9746 Jensen Dr, Houston, TX 77093
(713) 695-5186
James C. Klawinsky
P, Director
SKIPPY'S USED CARS AND BATTERY SERVICE INC
3004 Cricket Ln, Houston, TX 77093

Publications

Us Patents

Tan Integrated Circuit (Ic) Capacitor

View page
US Patent:
20070045774, Mar 1, 2007
Filed:
Aug 26, 2005
Appl. No.:
11/212455
Inventors:
Michael Huber - Sachse TX, US
Gregory Hendy - Murphy TX, US
Evelyn Lafferty - Frisco TX, US
George Harakas - Garland TX, US
Salvatore Pavone - Murphy TX, US
Blake Pasker - Wylie TX, US
Courtney Hazelton - Dallas TX, US
James Klawinsky - Irving TX, US
International Classification:
H01L 29/00
US Classification:
257532000, 257310000
Abstract:
A capacitor is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor generally comprises a top conductive plate, a capacitor dielectric and a bottom conductive plate that respectively comprise a patterned layer of tantalum nitride TaN, a layer of a nitride based material and a layer of patterned polysilicon.

Integrated Circuit Structure With Capacitor And Resistor And Method For Forming

View page
US Patent:
20100295149, Nov 25, 2010
Filed:
May 19, 2010
Appl. No.:
12/783044
Inventors:
Scott R. SUMMERFELT - Garland TX, US
Byron L. WILLIAMS - Plano TX, US
Scott K. MONTGOMERY - Rowlett TX, US
James KLAWINSKY - Murphy TX, US
Asad M. HAIDER - Plano TX, US
Assignee:
TEXAS INSTRUMENTS INCORPORATED - Dallas TX
International Classification:
H01L 29/92
H01L 29/8605
H01L 29/86
H01L 21/02
US Classification:
257529, 257532, 257536, 438381, 257E29342, 257E29326, 257E29325, 257E21003
Abstract:
An integrated circuit structure with a metal-to-metal capacitor and a metallic device such as a resistor, effuse, or local interconnect where the bottom plate of the capacitor and the metallic device are formed with the same material layers. A process for forming a metallic device along with a metal-to-metal capacitor with no additional manufacturing steps.

Method For Forming Integrated Circuit Structure With Capacitor And Resistor And Method For Forming

View page
US Patent:
20130302965, Nov 14, 2013
Filed:
Jul 1, 2013
Appl. No.:
13/932275
Inventors:
Byron L. WILLIAMS - Plano TX, US
Scott K. MONTGOMERY - Rowlett TX, US
James KLAWINSKY - Murphy TX, US
Asad M. HAIDER - Plano TX, US
International Classification:
H01L 49/02
US Classification:
438382, 438396
Abstract:
An integrated circuit structure with a metal-to-metal capacitor and a metallic device such as a resistor, effuse, or local interconnect where the bottom plate of the capacitor and the metallic device are formed with the same material layers. A process for forming a metallic device along with a metal-to-metal capacitor with no additional manufacturing steps.
Control profile
James W Klawinsky from Murphy, TX, age ~50 Get Report