James Larue Avery

43717390, Feb 1, 1983

Oct 16, 1981

6/311816

Kathy Lewis - Canoga Park CA
James E. Avery - Burbank CA

Atlantic Richfield Company - Los Angeles CA

H01L 3104

136251

A terminal assembly for providing external electrical connection to a solar panel having at least one solar cell and an electrically conductive layer located behind the cell. The terminal assembly has a substantially flat conductive portion between the cell and the conductive layer, and an insulating member of high dielectric strength positioned behind the flat portion to electrically isolate the flat portion from the conductive layer. A connector portion preferably extends rearwardly from the flat portion and through an opening in the conductive layer, the insulating member extending about the connector portion.

41418115, Feb 27, 1979

Apr 24, 1978

5/899760

John W. Yerkes - Granada Hills CA
James E. Avery - Burbank CA

Atlantic Richfield Company - Los Angeles CA

C23C 1500
H01L 3106

204192E

A process for manufacturing solar cells. Silicon wafers are assembled in a holding jig such as a diffusion boat in pairs with adjacent surfaces of each of the pairs in contact. The thus assembled wafers are subjected to a chemical vapor deposition diffusion step during which a phosphorous pentoxide glass layer is formed predominantly on the exposed surfaces and side edges of the wafers along with a PN junction thereunder. A small amount of the phosphorous pentoxide glass is also formed on the surfaces which are in contact with each other particularly at the outer edges thereof. The wafers are then reassembled in such a manner that the surfaces having the phosphorous pentoxide layer thereon are placed in contact with each other and again the wafers are placed in a holding jig. The thus assembled wafers are then placed in a plasma etching reactor for removal of the phosphorous pentoxide glass layer and the underlying PN junction from the side edges and the surfaces opposite the surfaces exposed during the previous diffusion step.

41585917, Jun 19, 1979

Apr 24, 1978

5/899436

James E. Avery - Burbank CA
Charles F. Gay - Tujunga CA

Atlantic Richfield Company - Los Angeles CA

H01L 2122
H01L 2124
H01L 21263
H01L 21308

156643

A method for manufacturing solar cells wherein a plurality of wafers of a first conductivity type are assembled and thereafter doped with an active impurity of an opposite conductivity imparting type to establish a p-n junction. Thereafter front and back contacts are formed on the wafers by metallization, the back contact material being chosen so that it penetrates any p-n junctions present in the area of the back contact, if any, and thereby forms a low resistance ohmic contact through any such junction. Thereafter the contact containing wafers are coin stacked and plasma etched so that the edge faces of the coin stacked wafers have removed therefrom sufficient p-n junction to electrically isolate the front junction from the back junction or junctions.

41054717, Aug 8, 1978

Jun 8, 1977

5/804688

John W. Yerkes - Granada Hills CA
James E. Avery - Burbank CA

Arco Solar, Inc. - Chatsworth CA

H01L 3106

136 89CC

A silicon solar cell having a body of boron doped P-type silicon material with a shallow P/N junction formed therein through diffusion of phosphorous into one surface thereof. A contact pattern of conductive material is formed on the surface of the solar cell in which the P/N junction is formed. The pattern is formed by first depositing a metallic layer upon the entire surface of the body and then applying the contact pattern by printing upon the surface of the metal. The metal has a characteristic such that when heated in the presence of oxygen to an appropriate temperature to fire the conductive material, it oxidizes and forms an anti-reflective layer on the surface of the cell except in those areas where the printed contact pattern is disposed. In the areas of the printed contact pattern the metal forms an ohmic contact between the surface of the silicon and the printed contact pattern and provides a barrier to preclude the conductive contact pattern material from punching through the shallow P/N junction.

41652410, Aug 21, 1979

Mar 27, 1978

5/890167

John W. Yerkes - Granada Hills CA
James E. Avery - Burbank CA

Atlantic Richfield Company - Los Angeles CA

H01L 3106

136 89CC

A silicon solar cell having a body of boron doped P-type silicon material with a shallow P/N junction formed therein through diffusion of phosphorous into one surface thereof. A contact pattern of conductive material is formed on the surface of the solar cell in which the P/N junction is formed. The pattern is formed by first depositing a metallic layer upon the entire surface of the body and then applying the contact pattern by printing upon the surface of the metal. The metal has a characteristic such that when heated in the presence of oxygen to an appropriate temperature to fire the conductive material, it oxidizes and forms an anti-reflective layer on the surface of the cell except in those areas where the printed contact pattern is disposed. In the areas of the printed contact pattern the metal forms an ohmic contact between the surface of the silicon and the printed contact pattern and provides a barrier to preclude the conductive contact pattern material from punching through the shallow P/N junction.

41167180, Sep 26, 1978

Mar 9, 1978

5/884861

John W. Yerkes - Granada Hills CA
James E. Avery - Burbank CA

Atlantic Richfield Company - Los Angeles CA

H01L 3104

136 89PC

A photovoltaic array composed of a light transmitting member having a plurality of sides, at least one photovoltaic means carried by at least one of said sides, and a diffusive member covering a portion of said device.