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Jack Wojslawowicz Phones & Addresses

  • 44 19Th St, Bayonne, NJ 07002 (201) 437-4657
  • 44 E 19Th St APT 1, Bayonne, NJ 07002 (201) 437-4657

Public records

Vehicle Records

Jack Wojslawowicz

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Address:
44 E 19 St, Bayonne, NJ 07002
VIN:
1GNKRJED1BJ145293
Make:
CHEVROLET
Model:
TRAVERSE
Year:
2011

Resumes

Resumes

Jack Wojslawowicz Photo 1

Jack Wojslawowicz

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Location:
Bayonne, NJ
Industry:
Semiconductors
Work:
Fairchild Semiconductor Inc.
Sr. Principle Eng.

Intersil 1999 - 2001
Memebr Techincal Staff

Harris Semiconductor 1988 - 1999
Sr Principle Eng

RCA Solid State Division 1970 - 1989
Applications Engineer
Education:
New Jersey Institute of Technology 1966 - 1970
Skills:
Semiconductors
Semiconductor Industry
Analog
Product Engineering
Ic
Electronics
Silicon
Product Development
Mixed Signal
Manufacturing
Product Marketing
Failure Analysis
Spc
Design of Experiments
Asic
Jack Wojslawowicz Photo 2

Jack Wojslawowicz

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Location:
44 east 19Th St, Bayonne, NJ 07002
Industry:
Electrical/Electronic Manufacturing
Work:
Fairchild Semiconductor
Sr. Principal Eng
Education:
New Jersey Institute of Technology 1966 - 1970
Bachelors, Bachelor of Science In Electrical Engineering, Electronics Engineering, Electronics
Skills:
Electronics
Engineering Management
Manufacturing
Engineering
Testing
Embedded Systems
Six Sigma
Statistical Process Control
Product Development
Electrical Engineering

Publications

Us Patents

Thick Buffer Region Design To Improve Igbt Self-Clamped Inductive Switching (Scis) Energy Density And Device Manufacturability

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US Patent:
6777747, Aug 17, 2004
Filed:
Jan 18, 2002
Appl. No.:
10/050976
Inventors:
Joseph A. Yedinak - Mountaintop PA
Jack E. Wojslawowicz - Bayonne NJ
Bernard J. Czeck - Mocanaqua PA
Robert D. Baran - Plains PA
Douglas Lange - Mountaintop PA
Assignee:
Fairchild Semiconductor Corporation - South Portland ME
International Classification:
H01L 2976
US Classification:
257339, 257341, 257342
Abstract:
An IGBT has a thick buffer region with increased doping to improve self-clamped inductive switching and device manufacture. A planar or trench gate IGBT has a buffer layer more than 25 microns thick. The buffer layer is doped high enough so that its carriers are more numerous than minority carriers, particularly at the transition between the N buffer N drift region.

Igbt With Channel Resistors

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US Patent:
6798019, Sep 28, 2004
Filed:
Jan 23, 2002
Appl. No.:
10/055211
Inventors:
Joseph A. Yedinak - Mountaintop PA
Dwayne S. Reichl - Pocono Lake PA
Jack E. Wojslawowicz - Bayonne NJ
Bernard J. Czeck - Mocanaqua PA
Robert D. Baran - Plains PA
Douglas Lange - Mountaintop PA
Assignee:
Fairchild Semiconductor Corporation - South Portland ME
International Classification:
H01L 2973
US Classification:
257341, 257578, 257579, 257580, 257592, 257401, 257139
Abstract:
An IGBT has striped cell with source stripes continuous or segmented along the length of the base stripe The opposite stripes are periodically connected together by the N+ contact regions to provide channel resistance along the width of the source stripes. For continuous stripes the resistance between two sequential contact areas is greatest in the middle and current concentrates near the source contact regions The wider the spacing between the contacts the larger the resistive drop to the midpoint between two N+ contacts.

Ignition System Open Secondary Detection

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US Patent:
8387598, Mar 5, 2013
Filed:
Aug 4, 2009
Appl. No.:
12/535597
Inventors:
James Edward Gillberg - Flemington NJ, US
Jack Edward Wojslawowicz - Bayonne NJ, US
Assignee:
Fairchild Semiconductor Corporation - San Jose CA
International Classification:
F02F 3/00
H01F 38/12
US Classification:
123634, 123605, 123618, 361247, 324380
Abstract:
This document discusses, among other things, a system and method for detecting an open secondary condition in a secondary coil of an ignition coil using a control signal received from a control input of a switch configured to control the flow of current to a primary coil of the ignition coil. In an example, the flow of current in the primary coil of the ignition coil can be controlled using an insulated gate bipolar junction transistor (IGBT), and the open secondary condition in the secondary coil of the ignition coil can be detected using a received gate voltage of the IGBT.

Vehicular Signal Light Control System

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US Patent:
40371956, Jul 19, 1977
Filed:
Dec 16, 1976
Appl. No.:
5/751172
Inventors:
Jack Edward Wojslawowicz - Bayonne NJ
Assignee:
RCA Corporation - New York NY
International Classification:
B60Q 100
US Classification:
340 66
Abstract:
A signal light control system for an automotive vehicle includes silicon-controlled-rectifiers of the gate-turn-off type (GTO), individual ones of which are used to selectively control the conduction of current to signal lamps mounted at the left-front, right-front, left-rear, and right-rear locations on the vehicle. A digital logic network is responsive to the conditions of the turn, hazard, and brake switches of the vehicle, and to the pulse train of a flasher circuit enabled during active conditions of the turn and hazard switches, for selectively applying appropriate control signals to the gate electrodes of the GTOs, to turn on and off the GTOs as required to operate the signal lamps during right and left turn conditions of the turn switch, braking of the vehicle, and the emergency condition of the hazard switch.

Direction Reversing Direct Current Motors And Their Control

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US Patent:
40951553, Jun 13, 1978
Filed:
Nov 10, 1975
Appl. No.:
5/630650
Inventors:
Ronald Robert Brooks - Hamilton Square NJ
Jack Edward Wojslawowicz - Bayonne NJ
Assignee:
RCA Corporation - New York NY
International Classification:
H02P 300
US Classification:
318541
Abstract:
A direct current motor which includes a stator for producing a fixed magnetic field and a plurality of armature windings. The motor is caused to rotate by applying current to each winding only while that winding is passing through a zone in a given orientation relative to the stator field. The direction of rotation is changed without changing the direction of the current applied to the windings, by changing the orientation of the zone relative to the stator field, to reverse the direction of the rotational force applied to the armature. Because the current does not reverse through the armature windings, the control circuit can be simple and in a preferred embodiment includes only two gate-turn-off silicon controlled rectifiers, a switch, and a resistor.

Gto Bi-Directional Motor Control Circuit

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US Patent:
41468260, Mar 27, 1979
Filed:
Nov 15, 1976
Appl. No.:
5/742068
Inventors:
Jack E. Wojslawowicz - Bayonne NJ
Assignee:
RCA Corporation - New York NY
International Classification:
H02P 108
US Classification:
318297
Abstract:
Gate-turn-off silicon controlled rectifiers (GTO's) are selectively rendered conductive to control the direction of rotation of a bi-directional motor. To this end a digital logic network is responsive to either one or both of a pair of remotely located switches being operated to either a first or a second condition, for controlling a transistorized gate signal generating network to apply an operating voltage to the gate electrode of the appropriate one(s) of the GTO's. The gate signal generating network includes circuitry for grounding the gates of the GTO's, turning them off if on and thereby inhibiting operation of the motor, whenever either of two operating conditions obtains. The first of these conditions occur when the switches are operated sequentially to be concurrently one in the first condition and the other in the second condition, and the second of these conditions is when one of the switches is returned from the first or second condition to a neutral condition with the other switch being in the neutral condition.
Jack E Wojslawowicz from Bayonne, NJ, age ~76 Get Report