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In Kil Hwang

from Murrieta, CA
Age ~85
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Also known as:
In K Hwang, Inkil K Hwang, In K Hwan, Kil Hwang In, Kil Hwang Ink, Wanq H In
Phone and address:
23011 Rosemont Ct, Murrieta, CA 92562
(951) 696-2210
Related to:
Chan S Hwang, 49Yi Wang, 65M S Duer, 75Joo H Hwang, 56Myung Hee Hwang, 83Irene HwangSun Park You, 51Irene K Hwang, 50Judy GreenBei Wang, 38Lena H Hwang, 54Sherman C Wang, 69Angela WangHongchao Wang, 39Myung H HwangRobert J Frank, 56
Connected to:
Ai Y Hwang, 77Amalia I Hwang, 64Andrea M Hwang, 42Anna S Hwang, 79Annette H Hwang, 37Anson Hwang, 31Ari S Hwang, 38Ben C Hwang, 57Bessie L Hwang, 63Boi S Hwang, 88

In Hwang Phones & Addresses

  • 23011 Rosemont Ct, Murrieta, CA 92562 (951) 696-2210
  • San Francisco, CA
  • Littleton, CO
  • Aurora, CO
  • Seattle, WA
  • Chicago, IL
  • South Holland, IL
  • Riverside, CA

Professional Records

Lawyers & Attorneys

In Hwang Photo 1

In Pyo Steve Hwang - Lawyer

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Address:
(108) 006-8665 (Office)
Licenses:
California - Active 2011
Education:
UCLA SOL
Univ of Toronto
In Hwang Photo 2

In Hwang - Lawyer

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ISLN:
921830311
Admitted:
2010

License Records

In Hui Hwang

License #:
CC-0005233 - Active
Category:
Accountancy
Issued Date:
Sep 29, 2004
Type:
C.P.A. Certificate

In J. Hwang

License #:
26WP002909 - Expired
Category:
Nursing
Issued Date:
Dec 30, 2014
Expiration Date:
Apr 29, 2015
Type:
HHA 120 Day Temp Work Permit

In Hui Hwang

License #:
CC-0005233 - Active
Category:
Accountancy
Issued Date:
Sep 29, 2004
Type:
C.P.A. Certificate

In J. Hwang

License #:
26WP002909 - Expired
Category:
Nursing
Issued Date:
Dec 30, 2014
Expiration Date:
Apr 29, 2015
Type:
HHA 120 Day Temp Work Permit

In J. Hwang

License #:
26WP002909 - Expired
Category:
Nursing
Issued Date:
Dec 30, 2014
Expiration Date:
Apr 29, 2015
Type:
HHA 120 Day Temp Work Permit

Business Records

Name / Title
Company / Classification
Phones & Addresses
In Y. Hwang
Principal
Lock Patrol
Repair Services Detective/Armored Car Services
12225 NE 78 St, Kirkland, WA 98033
In Hwang
EMAGE LLC
In Hyung Hwang
Managing
North America Lohasmedia, LLC
Internet Broadcasting

Publications

Us Patents

Cap Layer For Bit Line Resistance Reduction

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US Patent:
20200235104, Jul 23, 2020
Filed:
Apr 3, 2020
Appl. No.:
16/839392
Inventors:
- Santa Clara CA, US
Jianxin Lei - Fremont CA, US
Wenting Hou - San Jose CA, US
Mihaela Balseanu - Sunnyvale CA, US
Ning Li - San Jose CA, US
Sanjay Natarajan - Portland OR, US
Gill Yong Lee - San Jose CA, US
In Seok Hwang - Pleasanton CA, US
Nobuyuki Sasaki - Cupertino CA, US
Sung-Kwan Kang - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 27/108
H01L 21/3213
H01L 21/033
Abstract:
Memory devices and methods of forming memory devices are described. The memory devices comprise a substrate with at least one film stack. The film stack comprises a polysilicon layer on the substrate; a bit line metal layer on the polysilicon layer; a cap layer on the bit line metal layer; and a hardmask on the cap layer. The memory device of some embodiments includes an optional barrier metal layer on the polysilicon layer and the bit line metal layer is on the barrier metal layer. Methods of forming electronic devices are described where one or more patterns are transferred through the films of the film stack to provide the bit line of a memory device.

Methods And Apparatus For Smoothing Dynamic Random Access Memory Bit Line Metal

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US Patent:
20200126844, Apr 23, 2020
Filed:
Nov 21, 2019
Appl. No.:
16/690620
Inventors:
- Santa Clara CA, US
JIANXIN LEI - FREMONT CA, US
SANJAY NATARAJAN - PORTLAND OR, US
IN SEOK HWANG - SANTA CLARA CA, US
NOBUYUKI SASAKI - CUPERTINO CA, US
International Classification:
H01L 21/768
H01L 21/285
H01L 21/02
Abstract:
A process of smoothing a top surface of a bit line metal of a memory structure decreases resistance of a bit line stack. The process includes depositing a titanium layer of approximately 30 angstroms to 50 angstroms on a polysilicon layer on a substrate, depositing a first titanium nitride layer of approximately 15 angstroms to approximately 40 angstroms on the titanium layer, annealing the substrate at a temperature of approximately 700 degrees Celsius to approximately 850 degrees Celsius, depositing a second titanium nitride layer of approximately 15 angstroms to approximately 40 angstroms on the first titanium nitride layer after annealing, and depositing a bit line metal layer of ruthenium on the second titanium nitride layer.

Cap Layer For Bit Line Resistance Reduction

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US Patent:
20200126996, Apr 23, 2020
Filed:
Oct 18, 2018
Appl. No.:
16/164236
Inventors:
- Santa Clara CA, US
Jianxin Lei - Fremont CA, US
Wenting Hou - San Jose CA, US
Ning Li - San Jose CA, US
Sanjay Natarajan - Portland OR, US
Gill Yong Lee - San Jose CA, US
In Seok Hwang - Pleasanton CA, US
Nobuyuki Sasaki - Santa Clara CA, US
Sung-Kwan Kang - San Jose CA, US
International Classification:
H01L 27/108
H01L 21/033
H01L 21/3213
Abstract:
Memory devices and methods of forming memory devices are described. The memory devices comprise a substrate with at least one film stack. The film stack comprises a polysilicon layer on the substrate; a bit line metal layer on the polysilicon layer; a cap layer on the bit line metal layer; and a hardmask on the cap layer. The memory device of some embodiments includes an optional barrier metal layer on the polysilicon layer and the bit line metal layer is on the barrier metal layer. Methods of forming electronic devices are described where one or more patterns are transferred through the films of the film stack to provide the bit line of a memory device.

Isbn (Books And Publications)

One Korea Via Permanent Neutrality: Peaceful Management of Korean Unification

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Author

in K. Hwang

ISBN #

0870470167

One Korea Via Permanent Neutrality

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Author

in K. Hwang

ISBN #

0870470175

The Neutralized Unification of Korea in Perspective

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Author

in K. Hwang

ISBN #

0870738275

The Neutralized Unification of Korea in Perspective

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Author

in K. Hwang

ISBN #

0870738283

The Korean Reform Movement of the 1880's: A Study of Transition in Intra-Asian Relations

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Author

in K. Hwang

ISBN #

0870739743

The Korean Reform Movement of the 1880's: A Study of Transition in Intra-Asian Relations

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Author

in K. Hwang

ISBN #

0870739751

The United States and Neutral Reunited Korea: Search for a New Basis of American Strategy

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Author

in Kwan Hwang

ISBN #

0819179140

The United States and Neutral Reunited Korea: Search for a New Basis of American Strategy

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Author

in Kwan Hwang

ISBN #

0819179159

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In Kil Hwang from Murrieta, CA, age ~85 Get Report