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Ian Y Yee

from Plano, TX
Age ~65
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Also known as:
Ian Ying Yee, Ian K Yee
Related to:
Chris C Lee, 53Soo Min Yee, 96Isabel Yee, 71Justina Yee, 47Brian Lee, 67Nam Yee, 66
Connected to:
Adriel S Yee, 42Alpha Yee, 32Anita D Yee, 53Bik Y Yee, 88Bridget F Yee, 67Carolyn F Yee, 77Caryn K Yee, 57Cathy W Yee, 47Ceci Z Yee, 65Cesar I Yee, 49

Ian Yee Phones & Addresses

  • Plano, TX
  • 4828 Rollingwood Dr, Austin, TX 78746 (512) 347-7351
  • 1711 34Th St, Austin, TX 78703 (512) 453-6287
  • West Lake Hills, TX
  • Cambridge, MA
  • North Brunswick, NJ
  • Mendham, NJ
  • Medford, MA
  • 4828 Rollingwood Dr, West Lake Hills, TX 78746

Work

Position: Professional/Technical

Education

Degree: Graduate or professional degree

Emails

i***[email protected]

Resumes

Resumes

Ian Yee Photo 1

Ian Yee

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Location:
Dallas, TX
Industry:
Semiconductors
Ian Yee Photo 2

Scientist Extraordinaire

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Location:
Austin, Texas Area
Industry:
Semiconductors

Publications

Us Patents

Microelectromechanical Switches Having Mechanically Active Components Which Are Electrically Isolated From Components Of The Switch Used For The Transmission Of Signals

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US Patent:
20070040637, Feb 22, 2007
Filed:
Aug 19, 2005
Appl. No.:
11/207324
Inventors:
Ian Yee - Austin TX, US
William Flynn - Austin TX, US
International Classification:
H01H 51/22
US Classification:
335078000
Abstract:
A plate-based microelectromechanical system (MEMS) switch is provided which includes a moveable plate suspended above a substrate and a plurality of arms extending from the periphery of the moveable plate. The moveable plate includes a first electrode suspended over a second electrode arranged on the substrate and a first input/output signal contact structure electrically isolated from the first electrode. In some embodiments, the first input/output signal contact structure is arranged proximate to the edge of the moveable plate. In addition or alternatively, one of the arms is electrically coupled to the first input/output signal contact structure and comprises an input/output signal trace. A cantilever-based MEMS switch is provided which includes a cantilever structure with a first electrode suspended a second electrode arranged upon a substrate. In addition, the cantilever structure includes an input/output signal line spaced apart from the first electrode and arranged above an input/output signal contact structure.

Wafer-Level-Packaged Baw Devices With Surface Mount Connection Structures

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US Patent:
20180109237, Apr 19, 2018
Filed:
Oct 6, 2017
Appl. No.:
15/727117
Inventors:
- Greensboro NC, US
Buu Quoc Diep - Murphy TX, US
Ian Y. Yee - Austin TX, US
Bang Nguyen - Richardson TX, US
Ebrahim Andideh - Portland OR, US
Robert Kraft - Plano TX, US
International Classification:
H03H 9/10
H01L 41/29
H03H 9/02
H03H 9/00
H01L 41/083
H03H 9/17
H03H 9/05
Abstract:
The present disclosure relates to a Wafer-Level-Packaged (WLP) Bulk Acoustic Wave (BAW) device that includes a BAW resonator, a WLP enclosure, and a surface mount connection structure. The BAW resonator includes a piezoelectric layer with an opening and a bottom electrode lead underneath the piezoelectric layer, such that a portion of the bottom electrode lead is exposed through the opening of the piezoelectric layer. The WLP enclosure includes a cap and an outer wall that extends from the cap toward the piezoelectric layer to form a cavity. The opening of the piezoelectric layer is outside the cavity. The surface mount connection structure covers a portion of a top surface of the cap and extends continuously over a side portion of the WLP enclosure and to the exposed portion of the bottom electrode lead through the opening of the piezoelectric layer.

High-Power Acoustic Device With Improved Performance

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US Patent:
20180061744, Mar 1, 2018
Filed:
Aug 24, 2017
Appl. No.:
15/685850
Inventors:
- Greensboro NC, US
Ian Y. Yee - Austin TX, US
Jeffrey D. Galipeau - Apopka FL, US
Jason Wu - Windermere FL, US
Rodolfo E. Chang - Longwood FL, US
International Classification:
H01L 23/495
H01L 21/52
H01L 21/56
H01L 21/48
H01L 21/02
H01L 23/532
Abstract:
The present disclosure relates to a high-power acoustic device with improved performance. The disclosed acoustic device includes a substrate, a die-attach material, and an acoustic die. The substrate includes a substrate body and a die pad on a top surface of the substrate body. The die-attach material is a sintered material and applied over the die pad. The acoustic die is coupled to the die pad via the die-attach material. Herein, the acoustic die includes a die body and a metallization structure, which is sandwiched between the die body and the die-attach material.

Acoustic Wave Device

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US Patent:
20140252916, Sep 11, 2014
Filed:
Mar 8, 2013
Appl. No.:
13/791600
Inventors:
TRIQUINT SEMICONDUCTOR, INC. - , US
Kurt Steiner - Orlando FL, US
Alan S. Chen - Windermere FL, US
Charles E. Carpenter - Orlando FL, US
Ian Yee - Austin TX, US
Jean Briot - Apopka FL, US
George Grama - Orcutt CA, US
Assignee:
TRIQUINT SEMICONDUCTOR, INC. - Hillsboro OR
International Classification:
H01L 41/047
US Classification:
310313 R
Abstract:
Embodiments described herein may provide an acoustic wave device, a method of fabricating an acoustic wave device, and a system incorporating an acoustic wave device. The acoustic wave device may include a transducer disposed on a substrate, with a contact coupled with the transducer. The acoustic wave device may further include a wall layer and cap that define an enclosed opening around the transducer. A via may be disposed through the cap and wall layer over the contact, and a top metal may be disposed in the via. The top metal may form a pillar in the via and a pad on the cap above the via. The pillar may provide an electrical connection between the pad and the contact. In some embodiments, the acoustic wave device may be formed as a wafer-level package on a substrate wafer.
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Ian Y Yee from Plano, TX, age ~65 Get Report