Ian J Curtin

20220238325, Jul 28, 2022

Jun 3, 2020

17/596096

- Fremont CA, US
Joseph R. Abel - West Linn OR, US
Ian John Curtin - Portland OR, US
Purushottam Kumar - Hillsboro OR, US
Awnish Gupta - Hillsboro OR, US

H01L 21/02
H01J 37/32
C23C 16/455
C23C 16/40

Methods of providing control of film properties during atomic layer deposition using intermittent plasma treatment in-situ are provided herein. Methods include modulating gas flow rate ratios used to generate plasma during intermittent plasma treatment, toggling plasma power, and modulating chamber pressure.

20230002887, Jan 5, 2023

Dec 1, 2020

17/756755

- Fremont CA, US
Ian John CURTIN - Portland OR, US
Joseph R. ABEL - West Linn OR, US
Frank Loren PASQUALE - Tigard OR, US
Douglas Walter AGNEW - Portland OR, US

C23C 16/04
C23C 16/455
C23C 16/52
C23C 16/40
H01J 37/32
H01L 21/768

Methods for filling gaps with dielectric material involve deposition using an atomic layer deposition (ALD) technique to fill a gap followed by deposition of a cap layer on the filled gap by a chemical vapor deposition (CVD) technique. The ALD deposition may be a plasma-enhanced ALD (PEALD) or thermal ALD (tALD) deposition. The CVD deposition may be plasma-enhanced CVD (PECVD) or thermal CVD (tCVD) deposition. In some embodiments, the CVD deposition is performed in the same chamber as the ALD deposition without intervening process operations. This in-situ deposition of the cap layer results in a high throughput process with high uniformity. After the process, the wafer is ready for chemical-mechanical planarization (CMP) in some embodiments.

20210398780, Dec 23, 2021

Nov 21, 2019

17/297766

- Fremont CA, US
Joseph R. ABEL - West Linn OR, US
Douglas Walter AGNEW - Portland OR, US
Ian John CURTIN - Portland OR, US

H01J 37/32
H01L 21/02
C23C 16/455

An apparatus is provided comprising a process chamber, a precursor gas source, a reactant gas source, an inhibitor gas source, a passivation gas source, a gas, a switching manifold, and a controller. The switching manifold in a first position provides a fluid connection between the inhibitor gas source and the gas inlet, wherein the switching manifold in a second position provides a fluid connection between the precursor gas source and the gas inlet, wherein the switching manifold in a third position provides a fluid connection between the reactant gas source and the gas inlet, wherein the switching manifold in a fourth position provides a fluid connection between the passivation gas source and the gas inlet; and wherein the switching manifold prevents the gas inlet from being in fluid connection with at least two of the gas sources at a same time