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Hui Lan Phones & Addresses

  • Redwood City, CA
  • San Jose, CA
  • 3727 Peacock Ct, Santa Clara, CA 95051
  • 3731 Peacock Ct, Santa Clara, CA 95051
  • 1735 Lawrence Rd, Santa Clara, CA 95051
  • Ellenboro, NC
  • 3046 Oakland Ave, Milwaukee, WI 53211
  • 2309 Locust St, Milwaukee, WI 53211
  • El Cerrito, CA
  • 741 Creekland Cir, San Jose, CA 95133

Publications

Us Patents

Post-Processing Scheme For Adaptive Directional Microphone System With Noise/Interference Suppression

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US Patent:
20040258255, Dec 23, 2004
Filed:
Aug 13, 2004
Appl. No.:
10/486784
Inventors:
Ming Zhang - Singapore, SG
Zhuliang Yu - Nanjing, CN
Hui Lan - San Jose CA, US
International Classification:
H04R003/00
H04R001/02
US Classification:
381/092000, 381/091000, 381/071110, 381/356000
Abstract:
The present invention provides an adaptive directional microphone system for enhancing an acoustic signal from a second direction and for reducing an acoustic signal from at least a first direction different from the second direction, the system comprising: an omni-directional microphone and a directional microphone being arranged in a closely acoustically-coupled way; an adaptive filtering circuit system for generating a first error signal e(n) corresponding to an acoustic signal in which the acoustic signal from the first direction is reduced; and a post-processing filter system for producing a second error signal e(n) corresponding to an acoustic signal in which the acoustic signal from the second direction is enhanced as compared to the acoustic signal related to the first error signal e(n).

Method To Detect Nand-Flash Parameters By Hardware Automatically

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US Patent:
20060195650, Aug 31, 2006
Filed:
Feb 25, 2005
Appl. No.:
11/067501
Inventors:
Zhiqiang Su - San Jose CA, US
Qasim Shami - Fremont CA, US
Hongping Liu - Milpitas CA, US
Hui Lan - San Jose CA, US
International Classification:
G06F 12/00
US Classification:
711103000
Abstract:
A method for automatically detecting a plurality of parameters for a NAND-Flash memory. A first step of the method may include generating a plurality of address cycles for the NAND-Flash memory. A second step may set an address number parameter of the parameters based on (i) a first number of the address cycles generated and (ii) a status signal generated by the NAND-Flash memory responsive to the address cycles. A third step generally includes generating at least one read cycle for the NAND-Flash memory after determining the address number parameter. A fourth step may set a page size parameter of the parameters based on (i) a second number of the read cycles generated and (ii) the status signal further responsive to the read cycles.
Hui Lan from Redwood City, CA, age ~51 Get Report