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Hui Te Chen

from Saint Louis, MO
Age ~56
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Also known as:
Hui Ou
Related to:
Shuchien Chen Chien, 52Shuchien Chien Chen, 50Wei H Chen, 35Yi H Chen, 50Jui K Chen, 82Yang R OuAiling L Chen, 57Hui Ling Chenhui, 63Sui Can Chen, 82H ChenHo S Lin, 48Zhiyun OuSzuchi Chen, 54
Connected to:
Abre G Chen, 65Adele Chen, 52Adeline K Chen, 39Ai M Chen, 60Ai C Chen, 79Aiping Chen, 63Alen Y Chen, 68Alma Chen, 29Amanda Chen, 44Amanda T Chen, 63

Hui Chen Phones & Addresses

  • Saint Louis, MO
  • Stockton, CA
  • Salt Lake City, UT
  • North Las Vegas, NV
  • San Jose, CA
  • Cupertino, CA
  • Las Vegas, NV
  • Sunnyvale, CA
  • Santa Clara, CA
  • Arlington, TX

Work

Company: none Address: None Phones: (775) 287-7986

Specialities

Buyer's Agent • Listing Agent

Professional Records

Medicine Doctors

Hui Chen Photo 1

Hui Chen

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Specialties:
Hematology/Oncology
Work:
Brookdale University Hospital Residency Program Hematology Oncology
1 Brookdale Plz RM 175, Brooklyn, NY 11212
(718) 240-5722 (phone), (718) 240-6493 (fax)
Languages:
English
Description:
Dr. Chen works in Brooklyn, NY and specializes in Hematology/Oncology. Dr. Chen is affiliated with Brookdale University Hospital.
Hui Chen Photo 2

Hui Jie Chen

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Specialties:
Radiology
Diagnostic Radiology
Education:
University of California at Los Angeles (2005)
Hui Chen Photo 3

Hui Chun Chen

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Specialties:
Family Medicine
Internal Medicine
Education:
George Washington University (1998)

Real Estate Brokers

Hui Chen Photo 4

Hui Chen, Las NV Real estate agent

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Specialties:
Buyer's Agent
Listing Agent
Work:
none
None
(775) 287-7986 (Office)

Business Records

Name / Title
Company / Classification
Phones & Addresses
Hui Chen
Manager
Sun Sheng Investment LC
Motion Picture Services
3395 S Jones Blvd, Las Vegas, NV 89146
4350 Spg Monsoon Rd, Las Vegas, NV 89102
(702) 635-1888
Hui Qiong Chen
Secretary, Treasurer
Chen Enterprises, Inc
3200 Las Vegas Blvd S, Las Vegas, NV 89109
Hui Chen
Secretary
Officina Italiana
124 Sir George Dr, Las Vegas, NV 89110
126 Sir George Dr, Las Vegas, NV 89110
Hui Chen
TANUKI JAPANESE INC
Hui B Chen
HUIMEI, LLC
Hui Chen
FUJI SUSHI & STEAK HOUSE INC
Hui Chen
CASH OCEAN INTERNET, INC
Hui Chen
Manager
Y Y M Enterprise, LLC
3395 S Jones Blvd, Las Vegas, NV 89146

Publications

Isbn (Books And Publications)

My Blanket

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Author

Hui Chuan Chen

ISBN #

0805941231

Wikipedia References

Hui Chen Photo 5

Hui Chen

Hui Chen Photo 6

Hui Chen (Economist)

Amazon

Dr. Theodore Chen - The Pioneer Of Chinese American Education

DR. THEODORE CHEN - The Pioneer of Chinese American Education

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Dr. Hsi-En “Theodore” Chen had a long and distinguished career in higher education, both in the United States and in China. Dr. Chen was the first professor of Chinese ancestry to be granted tenure at the University of Southern California; his hiring opened the gates for Chinese scholars to teach in...
Author

Wen Hui Chen

Binding

Kindle Edition

Pages

182

ISBN #

10

Mobile Telemedicine: A Computing And Networking Perspective

Mobile Telemedicine: A Computing and Networking Perspective

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The concept of medical treatment from a distance (in absentia care) is actually quite ancient, dating back to tribal days where smoke signals were used to warn of serious disease in a community. Nowadays, telemedicine is used to facilitate treatment in rural areas, where the nearest doctor is miles ...
Binding

Hardcover

Pages

440

Publisher

Auerbach Publications

ISBN #

1420060465

EAN Code

9781420060461

ISBN #

9

Memoirs Of Chen Bulei( Chen Bulei Hui Yi Lu) --Simplified Chinese Edition -- Bookdna Chinese Classics

Memoirs of Chen BuLei( Chen BuLei Hui Yi Lu) --Simplified Chinese Edition -- BookDNA Chinese Classics

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Author

Chen BuLei

Binding

Kindle Edition

Pages

75

Publisher

ZHE JIANG PUBLISHING UNITED GROUP

ISBN #

6

Easy & Fun Chinese For Kids

Easy & Fun Chinese for Kids

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Easy & Fun Chinese for Kids is designed with non-native children learning Chinese as a foreign language in mind. It follows the rules of teaching foreign language to children and makes learning a great fun. Pinyin, spoken Chinese, Chinese children's songs, Chinese characters, and short passages are ...
Author

Chief Editor: Chen Xiaohui

Binding

Paperback

Pages

299

Publisher

Sinolingua Co.,Ltd

ISBN #

7802003997

EAN Code

9787802003996

ISBN #

15

You Are The Best (Chinese Edition)

You Are The Best (Chinese Edition)

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Everyone has experienced rejection, failure and all kinds of unpleasant things in life, and we may doubt if we are good enough or if there is no one in the world that loves us in time of failure. However, you need believe, you are the best. So when rainy day comes, we need try to be the sun for ours...
Author

Yang Yang, Zhang Hui Chen

Binding

Paperback

Pages

244

Publisher

Hunan literature and Art Publishing House

ISBN #

7540466146

EAN Code

9787540466145

ISBN #

14

Monte Carlo Methods In Bayesian Computation (Springer Series In Statistics)

Monte Carlo Methods in Bayesian Computation (Springer Series in Statistics)

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Dealing with methods for sampling from posterior distributions and how to compute posterior quantities of interest using Markov chain Monte Carlo (MCMC) samples, this book addresses such topics as improving simulation accuracy, marginal posterior density estimation, estimation of normalizing constan...
Author

Ming-Hui Chen, Qi-Man Shao, Joseph G. Ibrahim

Binding

Hardcover

Pages

387

Publisher

Springer

ISBN #

0387989358

EAN Code

9780387989358

ISBN #

13

World Century Compendium To Tcm:volume 3: Introduction To Chinese Materia Medica (Introduction To Tcm)

World Century Compendium to TCM:Volume 3: Introduction to Chinese Materia Medica (Introduction to Tcm)

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This book aims to provide readers with adequate knowledge for clinical application of Chinese medicine, which is in line with the fundamental principle of “correspondence of Chinese medicinals and patterns.” It contains a brief introduction to relative theories, divides these medicinals by actions i...
Author

Jin Yang, Huang Huang, Li-jiang Zhu, Yun-hui Chen

Binding

Kindle Edition

Pages

575

Publisher

WCPC

ISBN #

11

Human Ear Recognition By Computer (Advances In Computer Vision And Pattern Recognition)

Human Ear Recognition by Computer (Advances in Computer Vision and Pattern Recognition)

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At the frontier of research, this book offers complete coverage of human ear recognition. It explores all aspects of 3D ear recognition: representation, detection, recognition, indexing and performance prediction. It uses large datasets to quantify and compare the performance of various techniques. ...
Author

Bir Bhanu, Hui Chen

Binding

Hardcover

Pages

206

Publisher

Springer

ISBN #

1848001282

EAN Code

9781848001282

ISBN #

8

Us Patents

High Aspect Ratio Trench Structures With Void-Free Fill Material

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US Patent:
7956411, Jun 7, 2011
Filed:
Jan 14, 2009
Appl. No.:
12/353909
Inventors:
James J. Murphy - South Jordan UT, US
Hui Chen - South Jordan UT, US
Eileen Valdez - South Jordan UT, US
Assignee:
Fairchild Semiconductor Corporation - San Jose CA
International Classification:
H01L 29/78
US Classification:
257330, 257E29262
Abstract:
A field effect transistor (FET) includes a trench extending into a semiconductor region. A conductive electrode is disposed in the trench, and the conductive electrode is insulated from the semiconductor region by a dielectric layer. The conductive electrode includes a conductive liner lining the dielectric layer along opposite sidewalls of the trench. The conductive liner has tapered edges such that a thickness of the conductive liner gradually increases from a top surface of the conductive electrode to a point in lower half of the conductive electrode. The conductive electrode further includes a conductive fill material sandwiched by the conductive liner. The FET further includes a drift region of a first conductivity type in the semiconductor region, and a body region of a second conductivity type extending over the drift region. Source regions of the first conductivity type extend in the body region adjacent the trench.

Method For Forming Trenches With Wide Upper Portion And Narrow Lower Portion

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US Patent:
8003522, Aug 23, 2011
Filed:
Dec 3, 2008
Appl. No.:
12/327425
Inventors:
Hui Chen - South Jordan UT, US
Ihsiu Ho - Salt Lake City UT, US
Stacy W. Hall - West Jordan UT, US
Briant Harward - West Jordan UT, US
Hossein Paravi - Sandy UT, US
Assignee:
Fairchild Semiconductor Corporation - San Jose CA
International Classification:
H01L 21/00
US Classification:
438637, 438646, 438652, 438737, 438782, 257E21029, 257E21252, 257E21257, 257E21577, 257E21586
Abstract:
A method for forming a semiconductor structure includes the following steps. A hard mask layer is formed over a semiconductor region. The hard mask layer has inner portions that are thinner than its outer portions, and the inner portions define an exposed surface area of the semiconductor region. A portion of the semiconductor region is removed through the exposed surface area of the semiconductor region. The thinner portions of the hard mask layer are removed to expose surface areas of the semiconductor region underlying the thinner portions. An additional portion of the semiconductor region is removed through all exposed surface areas of the semiconductor region thereby forming a trench having an upper portion that is wider than its lower portion.

Structure And Method For Forming Hybrid Substrate

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US Patent:
8039401, Oct 18, 2011
Filed:
Dec 10, 2008
Appl. No.:
12/332326
Inventors:
Qi Wang - Sandy UT, US
Joelle Sharp - Herriman UT, US
Minhua Li - Sandy UT, US
Hui Chen - South Jordan UT, US
Assignee:
Fairchild Semiconductor Corporation - So. Portland ME
International Classification:
H01L 21/30
H01L 21/46
H01L 21/20
H01L 21/36
H01L 21/311
US Classification:
438700, 438694, 438455, 438478, 257E21088, 257E21567, 257E21214, 257E21599
Abstract:
A first and a second substrate are bonded together to thereby form a unitary hybrid substrate. Predefined portions of the first substrate are removed to form openings in the first substrate through which surface regions of the second substrate are exposed. A selective epitaxial growth process that is selective with respect to the crystalline orientations of the first and second substrates is carried out to thereby form epitaxial silicon from the exposed surfaces of the second substrate but not from exposed surfaces of the first substrate. The epitaxial silicon formed from the exposed surfaces of the second substrate has the same crystalline orientation as the second substrate.

High Aspect Ratio Trench Structures With Void-Free Fill Material

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US Patent:
8198196, Jun 12, 2012
Filed:
Jun 6, 2011
Appl. No.:
13/154228
Inventors:
James J. Murphy - South Jordan UT, US
Hui Chen - South Jordan UT, US
Eileen Valdez - South Jordan UT, US
Assignee:
Fairchild Semiconductor Corporation - South Portland ME
International Classification:
H01L 21/336
US Classification:
438720, 257E29262
Abstract:
A field effect transistor (FET) includes a trench extending into a semiconductor region. A conductive electrode is disposed in the trench, and the conductive electrode is insulated from the semiconductor region by a dielectric layer. The conductive electrode includes a conductive liner lining the dielectric layer along opposite sidewalls of the trench. The conductive liner has tapered edges such that a thickness of the conductive liner gradually increases from a top surface of the conductive electrode to a point in lower half of the conductive electrode. The conductive electrode further includes a conductive fill material sandwiched by the conductive liner. The FET further includes a drift region of a first conductivity type in the semiconductor region, and a body region of a second conductivity type extending over the drift region. Source regions of the first conductivity type extend in the body region adjacent the trench.

Technique For Controlling Trench Profile In Semiconductor Structures

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US Patent:
20090269896, Oct 29, 2009
Filed:
Apr 24, 2008
Appl. No.:
12/109302
Inventors:
Hui Chen - South Jordan UT, US
Qi Wang - Sandy UT, US
Briant Harward - West Jordan UT, US
James Pan - West Jordan UT, US
International Classification:
H01L 21/336
US Classification:
438271, 257E21205, 257E21219, 257E2141
Abstract:
A method for forming a semiconductor structure includes the following steps. Trenches are formed in a semiconductor region using a masking layer such that the trenches have a first depth, a first width along their bottom, and sidewalls having a first slope. The masking layer is removed, and a bevel etch is performed to taper the sidewalls of the trenches so that the sidewalls have a second slope less than the first slope.

Dual Chamber Megasonic Cleaner

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US Patent:
20090320875, Dec 31, 2009
Filed:
Jun 23, 2009
Appl. No.:
12/490114
Inventors:
RICARDO MARTINEZ - Manteca CA, US
Allen L. D'Ambra - Burlingame CA, US
Adrian Blank - San Jose CA, US
Thuy Britcher - San Jose CA, US
Hui Chen - Burlingame CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
B08B 3/12
US Classification:
134 13, 134184
Abstract:
Embodiments described herein relate to semiconductor device manufacturing, and more particularly to a vertically oriented dual megasonic module for simultaneously cleaning multiple substrates. In one embodiment, an apparatus for cleaning multiple substrates is provided. The apparatus comprises an outer tank for collecting overflow processing fluid comprising at least one sidewall and a bottom. A first inner module adapted to contain a processing fluid is positioned partially within the outer tank. The first inner module comprises one or more roller assemblies to hold a substrate in a substantially vertical orientation. A second inner module adapted to contain a processing fluid is positioned partially within the outer tank. The second inner module comprises one or more roller assemblies adapted to hold a substrate in a substantially vertical orientation. Each inner module contains a transducer adapted to direct vibrational energy through the processing fluid toward the substrates.

Enzymes And Methods For Styrene Synthesis

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US Patent:
20150337336, Nov 26, 2015
Filed:
Jun 21, 2013
Appl. No.:
14/409600
Inventors:
- Rancho Santa Margarita CA, US
Hui Chen - Olivette MO, US
Xianpeng Cai - Olivette MO, US
Jixiang Han - Maryland Heights MO, US
Xiaodan Yu - Chesterfield MO, US
International Classification:
C12P 5/00
C12N 9/88
Abstract:
The subject technology generally relates to biosynthesis of styrene. Certain embodiments of the subject technology is based, in part, on the recognition that phenylalanine can be converted to styrene by a two-step pathway of deamination and decarboxylation, with trans-cinnamic acid (tCA) as the intermediate. Two types of enzymes are directly involved in this process, phenylalanine ammonia lyase (PAL), which converts phenylalanine to tCA, and cinnamic acid decarboxylase, which coverts tCA to styrene. Host cells expressing these two types of enzymes can be cultured in bioreactor to produce styrene from renewable substrates such as glucose.

Methods And Apparatus Related To Termination Regions Of A Semiconductor Device

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US Patent:
20140264569, Sep 18, 2014
Filed:
Mar 11, 2014
Appl. No.:
14/204765
Inventors:
- San Jose CA, US
Dean E. PROBST - West Jordan UT, US
Richard STOKES - Shavertown PA, US
Suku KIM - South Jordan UT, US
Jason HIGGS - Mountain Top PA, US
Fred SESSION - Sandy UT, US
Hui CHEN - South Jordan UT, US
Steven P. SAPP - Felton CA, US
Jayson PREECE - Riverton UT, US
Mark L. Rinehimer - Mountain Top PA, US
Assignee:
Fairchild Semiconductor Corporation - San Jose CA
International Classification:
H01L 29/78
H01L 21/02
H01L 29/06
US Classification:
257330, 257618, 438478
Abstract:
In one general aspect, an apparatus can include a semiconductor region, and a trench defined within the semiconductor region. The trench can have a depth aligned along a vertical axis and have a length aligned along a longitudinal axis orthogonal to the vertical axis. The trench can have a first portion of the length included in a termination region of the semiconductor region and can have a second portion of the length included in an active region of the semiconductor region.
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Hui Te Chen from Saint Louis, MO, age ~56 Get Report