Hongjun Zhou

8318126, Nov 27, 2012

May 4, 2010

12/773651

Stanislaus S. Wong - Stony Brook NY, US
Hongjun Zhou - Austin TX, US

C01B 13/14
C01G 3/02
C01G 45/02
C01G 9/02
C01G 49/02
C01G 51/04
C01G 53/04
C01G 15/00
C01G 19/02
C01G 37/02
C01G 25/02
C01G 31/02
C01G 55/00
C01G 41/02
C01G 17/02
C01G 30/00
C01G 33/00
C01G 47/00
C01G 21/02
C01G 11/00
C01G 29/00
C01F 7/02
C01F 5/02
C01F 11/02
C01F 17/00

4235921, 423604, 423605, 423606, 423607, 423608, 423617, 423618, 423619, 423622, 423624, 423625, 423632, 423635, 42359418, 42359419, 977762, 977763, 977811

The present invention includes a method of producing a crystalline metal oxide nanostructure. The method comprises providing a metal salt solution and providing a basic solution; placing a porous membrane between the metal salt solution and the basic solution, wherein metal cations of the metal salt solution and hydroxide ions of the basic solution react, thereby producing a crystalline metal oxide nanostructure.

20100129286, May 27, 2010

Oct 6, 2009

12/587491

Stanislaus S. Wong - Stony Brook NY, US
Hongjun Zhou - Austin TX, US

C01G 25/02

42359412

The present invention includes a method of making a plurality of nanoparticles comprising single crystalline spherical BaZrOparticles, cubic BaZrOparticles or a mixture of both. The method comprises: providing a mixture of a barium precursor, a zirconium precursor and a hydroxide salt or hydroxide salts; heating the mixture to an isothermic annealing temperature, wherein the annealing temperature is in a range of from about 470 C. to about 800 C.; annealing the mixture at the isothermic annealing temperature for an annealing time of in a range of about 15 minutes to about 280 minutes; and cooling the mixture at a fixed cooling rate to form the plurality of nanoparticles, wherein the cooling rate is in a range of from about 2 C./minute to about 200 C./minute. The ratio of spherical particles to cubic particles in the plurality is greater if the isothermic annealing temperature is at the higher end of the range; the ratio of spherical particles to cubic particles in the plurality is greater if the annealing time is at the higher end of the range; and the ratio of spherical particles to cubic particles in the plurality is greater if the cooling rate is at the lower end of the range.

20120043225, Feb 23, 2012

Aug 17, 2011

13/212022

Hongjun Zhou - Austin TX, US
Allen J. Bard - Austin TX, US

Board of Regents, The University of Texas System - Austin TX

G01N 27/416

205775, 204400

The present invention includes methods and compositions having at least one nanoparticle for analyzing a chemical analyte. The device includes an electrochemical cell connected to a measuring apparatus, wherein the electrochemical cell comprises a container and at least one electrode comprising a surface modification; a solution within the container comprising one or more chemical analytes and one or more metal nanoparticles in the solution, wherein one or more electrocatalytic properties are generated by the one or more metal nanoparticles at the at least one electrode and the contact of individual nanoparticles can be measured.

20230020073, Jan 19, 2023

Dec 2, 2020

17/756514

- Tempe AZ, US
Krishna P. Murella - Phoenix AZ, US
Joseph D. Rose - Gilbert AZ, US
Hongjun Zhou - Chandler AZ, US
Mark Leonard O'Neill - Queen Creek AZ, US

Versum Materials US, LLC - Tempe AZ

C09G 1/02
C09K 3/14
B24B 37/04
H01L 21/3105

High oxide film removal rate Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods, and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and a chemical additive for providing a high oxide film removal rate. The chemical additive is a gelatin molecule possessing negative and positive charges on the same molecule.

20210324270, Oct 21, 2021

Jun 22, 2021

17/354311

- Tempe AZ, US
Krishna P. Murella - Phoenix AZ, US
Joseph D. Rose - Gilbert AZ, US
Hongjun Zhou - Chandler AZ, US
Mark Leonard O'Neill - Queen Creek AZ, US

Versum Materials US, LLC - Tempe AZ

C09K 13/00
C09K 13/02
C09K 13/06
H01L 21/3105

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO:SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(−)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

20210309885, Oct 7, 2021

Jun 21, 2021

17/353236

- Tempe AZ, US
Krishna P. Murella - Phoenix AZ, US
Joseph D. Rose - Gilbert AZ, US
Hongjun Zhou - Chandler AZ, US
Mark Leonard O'Neill - Queen Creek AZ, US

Versum Materials US, LLC - Tempe AZ

C09G 1/02
H01L 21/321

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO: SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.

20200270479, Aug 27, 2020

Jan 22, 2020

16/749625

- Tempe AZ, US
Xiabo Shi - Chandler AZ, US
Hongjun Zhou - Chandler AZ, US
Krishna P. Murella - Phoenix AZ, US

Versum Materials US, LLC - Tempe AZ

C09G 1/02
H01L 21/321

Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) compositions, methods of using the composition and systems for using the composition are provided. The compositions comprise abrasive particles, and two different groups of chemical additives; a non-ionic organic surfactant molecule including polysorbate-type surfactants formed by the ethoxylation of the sorbitan and non-ionic organic molecules with multi hydroxyl functional groups in the same molecule. The compositions provide high silicon oxide removal rate (RR) and suppressed SiN removal rate (RR). A good pattern performance are provided by the compositions which offer desired silicon oxide RR at a reasonable DF and showing the high SiN RR suppression at an even higher DF from the blanket wafer data.

20200239735, Jul 30, 2020

Jan 8, 2020

16/737083

- Tempe AZ, US
Krishna P. Murella - Phoenix AZ, US
Joseph D. Rose - Gilbert AZ, US
Hongjun Zhou - Chandler AZ, US
Mark Leonard O'Neill - Queen Creek AZ, US

Versum Materials US, LLC - Tempe AZ

C09G 1/02
C09K 3/14
H01L 21/3105

Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing high oxide film removal rate. The dual chemical additives comprise gelatin compounds possessing negative and positive charges on the same molecule, and non-ionic organic molecules having multi hydroxyl functional groups in the same molecule.