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Hiroyuki Takaba

from Hillsboro, OR
Age ~49
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Related to:
H Takaba, 47H Takaba
Connected to:
Martin P Takac, 58Kristofer L Takach, 48Patrick B Takach, 74Alex J Takacs, 74Alexandra M Takacs, 36Alfred J Takacs, 80Aniko G Takacs, 48Annie Takacs, 76Brendan Takacs, 32Csaba R Takacs, 41

Hiroyuki Takaba Phones & Addresses

  • Hillsboro, OR
  • Portland, OR

Publications

Us Patents

Method Of Cleaning Plasma-Treating Apparatus, Plasma-Treating Apparatus Where The Cleaning Method Is Practiced, And Memory Medium Memorizing Program Executing The Cleaning Method

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US Patent:
20100175713, Jul 15, 2010
Filed:
Feb 18, 2008
Appl. No.:
12/528734
Inventors:
Noriaki Fukiage - Amagasaki-shi, JP
Shinji Komoto - Amagasaki-shi, JP
Hiroyuki Takaba - Hillsboro OR, US
Kiyotaka Ishibashi - Amagasaki-shi, JP
Assignee:
TOKYO ELECTRON LIMITED - Tokyo
International Classification:
B08B 7/00
C23F 1/08
US Classification:
134 11, 15634551, 15634537
Abstract:
A method of cleaning a plasma processing apparatus for processing a target in a process container, which is vacuum-evacuatable, using plasma, includes performing a first cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a first pressure, and performing a second cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a second pressure that is higher than the first pressure. Accordingly, the plasma processing apparatus can be efficiently and rapidly cleaned without damaging at least one of the group consisting of inner surfaces of the process container and members in the process container.

Method Of Depositing Dielectric Films Using Microwave Plasma

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US Patent:
20120115334, May 10, 2012
Filed:
Mar 28, 2011
Appl. No.:
13/073957
Inventors:
Hiroyuki Takaba - Portland OR, US
International Classification:
H01L 21/314
US Classification:
438784, 257E2127
Abstract:
Embodiments of the invention describe a method for forming dielectric films for semiconductor devices. The method includes providing a substrate in a process chamber containing a microwave plasma source, introducing into the process chamber a non-metal-containing process gas including a deposition gas having a carbon-nitrogen intermolecular bond, forming a plasma from the process gas, and exposing the substrate to the plasma to deposit carbon-nitrogen-containing film on the substrate. In some embodiments, the carbon-nitrogen-containing film can include a CN film, a CNO film, a Si-doped CN film, or a Si-doped CNO film.
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Hiroyuki Takaba from Hillsboro, OR, age ~49 Get Report