Inventors:
Hiroaki Fujita - Rochester NY, US
Assignee:
Eastman Kodak Company - Rochester NY
International Classification:
H01L 21/308
H01L 21/339
US Classification:
438 57, 438433, 438524, 438 73, 257446, 257E31054, 257E31055, 257E21551
Abstract:
A method for forming the passivation layer for silicon-isolation interface between photosensitive regions of an image sensor, the method includes providing a substrate having a plurality of spaced apart photosensitive regions that collect charge in response to incident light; etching trenches in the substrate between the photosensitive regions; forming a plurality of masks over the photosensitive regions so that trenches between the photosensitive regions are not covered by the masks; implanting the image sensor with a first low dose to passivate the trenches; filling the trenches with a dielectric to form isolation between the photosensitive regions; forming a plurality of masks which cover the photosensitive regions but does not cover a surface corner of the isolation trench to permit passivation implantation at the surface corner of the trench isolation; and implanting the image sensor at a second low dose to passivate the surface corner of trenched isolation region.
