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Hidetoshi Inoue

from Hayward, CA
Age ~71
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Related to:
Bruce InoueSusumu B Inoue, 75Masako M Inoue, 79Tokio S Inoue, 43
Connected to:
Dale H Inoue, 32Enson S Inoue, 57Hitoshi Inoue, 63Hozumi G Inoue, 37Luna Inoue, 48Mana Inoue, 69Masamichi Inoue, 74Masataka M Inoue, 70Michiyo Inoue, 44Minoru Inoue, 57

Hidetoshi Inoue Phones & Addresses

  • 1510 Zephyr Ave, Hayward, CA 94544
  • 762 Bounty Dr, San Mateo, CA 94404
  • Foster City, CA
  • Cupertino, CA
  • San Jose, CA

Professional Records

License Records

Hidetoshi Inoue

License #:
CC-0008949 - Active
Category:
Accountancy
Issued Date:
Oct 8, 2010
Type:
C.P.A. Certificate

Publications

Us Patents

Process For Reclaiming Wafer Substrates

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US Patent:
6406923, Jun 18, 2002
Filed:
Jul 31, 2000
Appl. No.:
09/630316
Inventors:
Hidetoshi Inoue - Hayward CA
Satoru Takada - Hayward CA
Yoshihiro Hara - Kobe, JP
Assignee:
Kobe Precision Inc. - Hayward CA
Kabushiki Kaisha Kobe Seiko Sho - Kobe
International Classification:
H01L 2100
US Classification:
438 4
Abstract:
A process capable of reclaiming used semiconductor wafers with a reduced metallic contamination level on wafer surfaces. The process comprises the steps of removing one or more surface layers of the substrate by chemical etching; scraping off one surface of the substrate in small amount by mechanical machining; removing a damage layer, which has occurred due to the mechanical machining, by chemical etching; and polishing the other surface of the substrate into a mirror finish.

Method For Reclaiming Wafer Substrate And Polishing Solution Compositions Therefor

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US Patent:
6451696, Sep 17, 2002
Filed:
Aug 27, 1999
Appl. No.:
09/384725
Inventors:
Yoshihiro Hara - Kobe, JP
Tetsuo Suzuki - Kobe, JP
Satoru Takada - Hayward CA
Hidetoshi Inoue - Hayward CA
Assignee:
Kabushiki Kaisha Kobe Seiko Sho - Kobe
Kobe Precision Inc. - Hayward CA
International Classification:
H01L 21302
US Classification:
438691, 438692, 438693, 438745
Abstract:
A method for reclaiming a wafer substrate material having a metallic film and a dielectric film includes a step for removing the entire metallic film and a part of the dielectric film with a chemical etching agent so as not to substantially dissolve the wafer substrate material itself, a step for removing the residual dielectric layer and the degenerated zone beneath the surface of the substrate by chemical-mechanical polishing, and a step for polishing at least one surface of the substrate.

Process For Recovering Substrates

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US Patent:
58557350, Jan 5, 1999
Filed:
Oct 3, 1995
Appl. No.:
8/538265
Inventors:
Satoru Takada - San Mateo CA
Hidetoshi Inoue - Cupertino CA
Yoshihiro Hara - Nishi-ku, JP
Assignee:
Kobe Precision, Inc. - San Jose CA
International Classification:
C23F 300
US Classification:
1566361
Abstract:
A process comprising removing surface layer materials from the wafer by inducing micro-fractures in the surface using a rotating pad and an abrasive slurry until all of the surface layer materials are removed; and chemically etching the surfaces of the wafer until all micro-fractures are removed therefrom. Edge materials are removed by abrasive tape. Wafer thickness reduction during recycling is less than 30 microns per cycle. One of the front and back surfaces of the wafer substrate is polished, any dots or grooves being on the non-polished side. The abrasive slurry contains more than 6 volume percent abrasive particles, and the abrasive slurry has a viscosity greater than about 2 cP at ambient temperature. The preferred pad comprises an organic polymer having a hardness greater than about 40 on the Shore D scale, optimally a polyurethane. The pressure of the pad against the wafer surface preferably does not exceed about 3 psi.
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Hidetoshi Inoue from Hayward, CA, age ~71 Get Report