Hideaki Masuda

20130171819, Jul 4, 2013

Dec 28, 2011

13/338486

Hideshi Miyajima - Clifton Park NY, US
Hideaki Masuda - White Plains NY, US

TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. - Irvine CA

H01L 21/768

438667, 257E21585

Described herein are methods for copper/low-k dielectric material integration. The methods involve depositing and curing a low-k dielectric material and depositing a mask on the low-k dielectric material. A via is patterned in the low-k dielectric material and a trench is patterned in the low-k dielectric material. After the via or trench is patterned, a portion of the low-k material is backfilled with a backfill material. The trench and via are filled with copper, then the mask and the copper filling the via are removed. After a first pre-CLN, the backfill material is removed. This creates a robust copper/porous low-k dielectric material interconnect.

20140054754, Feb 27, 2014

Aug 21, 2012

13/590341

Tadayoshi Watanabe - Fishkill NY, US
Hideaki Masuda - White Plains NY, US
Hideshi Miyajima - Clifton Park NY, US

TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. - Irvine CA

H01L 21/768
H01L 29/02

257635, 438675, 257E21586, 257E29002

Systems and methods are presented for filling an opening with material of a high integrity. A material having properties in a first physical state suitable for formation of a hard mask layer and in a second physical state having properties facilitating removal of the former hard mask layer is utilized. Utilizing the material as a mask layer and subsequently removing the material enables a number of mask layers to be minimized in a subsequent filling operation (e.g., metallization). Material amenable to being in a first physical state and a second physical state is an optically reactive material. The optically reactive dielectric can comprise an element or compound which can act as an agent/catalyst in the optical conversion process along with any element or compound which can act as an accelerator for the optical reaction. Conversion can be brought about by exposure to electromagnetic radiation and/or application of thermal energy.

20100311240, Dec 9, 2010

Mar 17, 2010

12/726138

Hideaki Masuda - New York NY, US
Kei Watanabe - Tokyo, JP
Kenichi Ootsuka - Kanagawa, JP

H01L 21/3205

438674, 257E21295

A method of manufacturing a semiconductor device according to an embodiment, includes forming a wiring in a surface of a first insulating film on a semiconductor substrate, exposing the first insulating film in whose surface the wiring is formed to a plasma containing a rare gas so as to form a densified layer on the surface of the first insulating film, removing an oxide film formed on the wiring, after the densified layer is formed and forming a second insulating film on the wiring from which the oxide film is removed and on the densified layer, wherein the processes from the removal of the oxide film to the formation of the second insulating film are carried out without being atmospherically-exposed.