Henry K Ho

6423949, Jul 23, 2002

May 19, 1999

09/314845

Steven Aihua Chen - Fremont CA
Henry Ho - San Jose CA
Michael X. Yang - Fremont CA
Bruce W. Peuse - San Carlos CA
Karl Littau - Palo Alto CA
Yu Chang - San Jose CA

Applied Materials, Inc. - Santa Clara CA

H05B 368

2194441, 118725

A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

6500266, Dec 31, 2002

Jan 18, 2000

09/484483

Henry Ho - San Jose CA
Alexander M. Rubinchik - San Jose CA
Aihua Chen - Fremont CA
Abril C. Cabreros - Gilroy CA
Steven T. Li - Cupertino CA
Mark Yam - Monte Sereno CA
Bruce W. Peuse - San Carlos CA

Applied Materials, Inc. - Santa Clara CA

C23C 1600

118730, 118666, 118696, 118697, 118715, 118725

An apparatus of a reactor or processing chamber comprising a chamber having a resistive heater disposed within a volume of the chamber, including a stage having a surface area to support a substrate such as a wafer and a body including at least one heating element, a shaft coupled to the body, a plurality of temperature sensors coupled to the chamber, each configured to measure a temperature at separate points associated with the surface area of the stage, and a motor coupled to the shaft and configured to rotate the resistive heater about an axis through the shaft. In this manner, the temperature sensors may measure a temperature at separate points of the surface area of the stage. A method of rotating a shaft and measuring a plurality of temperatures over the surface area of the stage or over a wafer seated on the stage with the plurality of temperature sensors.

6530992, Mar 11, 2003

Jul 9, 1999

09/350632

Michael X. Yang - Fremont CA
Henry Ho - San Jose CA
Steven A. Chen - Fremont CA

Applied Materials, Inc. - Santa Clara CA

C23C 1600

118695, 118697, 118704, 118715, 118725, 118728, 438791, 700121

Methods and apparatuses of forming a film on a substrate including introducing a pretreatment material into a processing chamber sufficient to form a film as a portion of an inner surface of the processing chamber to inhibit outgassing from that portion of the chamber, introducing a substrate into the chamber, and forming a film on the substrate.

6582522, Jun 24, 2003

Mar 2, 2001

09/798424

Lee Luo - Fremont CA
Henry Ho - San Jose CA
Shulin Wang - Campbell CA
Binh Hoa Tran - San Jose CA
Alexander Tam - Union City CA
Errol A. C. Sanchez - Dublin CA
Xianzhi Tao - Palo Alto CA
Steven A. Chen - San Jose CA

Applied Materials, Inc. - Santa Clara CA

C23C 1600

118715, 118725, 15634529

Provided herein is an emissivity-change-free pumping plate kit used in a single wafer chamber. This kit comprises a top open pumping plate, and optionally a skirt and/or a second stage choking plate. The skirt may be installed around the wafer heater, underneath the wafer heater, or along the chamber body inside the chamber. The choking plate is installed downstream of the top open pumping plate along the purge gas flow. Also provided is a method of preventing emissivity change and further providing optimal film thickness uniformity during wafer processing by utilizing such kit in the chamber.

6586343, Jul 1, 2003

Jul 9, 1999

09/350817

Henry Ho - San Jose CA
Ying Yu - Cupertino CA
Steven A. Chen - Fremont CA

Applied Materials, Inc. - Santa Clara CA

H01L 2131

438758, 438778, 438786, 438787, 438791, 118719, 118900

A method and apparatus for directing a process gas through a processing apparatus, such as a vapor deposition chamber. The apparatus comprises a pumping plate for a processing chamber having an annular body member wherein said body member has a first portion and a second defining a circumferential edge and a central opening. The first portion comprises a sidewall of the circumferential edge having a plurality of circumferentially spaced through holes and the second portion has comprises a lateral portion that protrudes from the circumferential edge, such that, in a processing chamber, the first portion defines a first gas flow region comprising the central opening and a second gas flow region comprising the lateral portion of the second portion.

6617553, Sep 9, 2003

Sep 19, 2002

10/246865

Henry Ho - San Jose CA
Anqing Cui - Mountain View CA
Xiaoxiong Yuan - Cupertino CA

Applied Materials, Inc. - Santa Clara CA

H05B 368

2194441, 219725

A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element, and the second heating element is offset from the first heating element in a plane substantially parallel to at least one of the first plane and the second plane.

6645884, Nov 11, 2003

Jul 9, 1999

09/350810

Michael X. Yang - Fremont CA
Karl Littau - Palo Alto CA
Steven A. Chen - Fremont CA
Henry Ho - San Jose CA
Ying Yu - Cupertino CA

Applied Materials, Inc. - Santa Clara CA

H01L 2102

438791, 438584, 438680, 438758, 438774, 438775

The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semiconductor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.

6646235, Nov 11, 2003

Oct 19, 2001

10/037151

Steven Aihua Chen - Fremont CA
Henry Ho - San Jose CA
Michael X. Yang - Fremont CA
Bruce W. Peuse - San Carlos CA
Karl Littau - Palo Alto CA
Yu Chang - San Jose CA

Applied Materials, Inc. - Santa Clara CA

H05B 368

2194441, 118725

A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.