Henry K Ho

6423949, Jul 23, 2002

May 19, 1999

09/314845

Steven Aihua Chen - Fremont CA
Henry Ho - San Jose CA
Michael X. Yang - Fremont CA
Bruce W. Peuse - San Carlos CA
Karl Littau - Palo Alto CA
Yu Chang - San Jose CA

Applied Materials, Inc. - Santa Clara CA

H05B 368

2194441, 118725

A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

6530992, Mar 11, 2003

Jul 9, 1999

09/350632

Michael X. Yang - Fremont CA
Henry Ho - San Jose CA
Steven A. Chen - Fremont CA

Applied Materials, Inc. - Santa Clara CA

C23C 1600

118695, 118697, 118704, 118715, 118725, 118728, 438791, 700121

Methods and apparatuses of forming a film on a substrate including introducing a pretreatment material into a processing chamber sufficient to form a film as a portion of an inner surface of the processing chamber to inhibit outgassing from that portion of the chamber, introducing a substrate into the chamber, and forming a film on the substrate.

6582522, Jun 24, 2003

Mar 2, 2001

09/798424

Lee Luo - Fremont CA
Henry Ho - San Jose CA
Shulin Wang - Campbell CA
Binh Hoa Tran - San Jose CA
Alexander Tam - Union City CA
Errol A. C. Sanchez - Dublin CA
Xianzhi Tao - Palo Alto CA
Steven A. Chen - San Jose CA

Applied Materials, Inc. - Santa Clara CA

C23C 1600

118715, 118725, 15634529

Provided herein is an emissivity-change-free pumping plate kit used in a single wafer chamber. This kit comprises a top open pumping plate, and optionally a skirt and/or a second stage choking plate. The skirt may be installed around the wafer heater, underneath the wafer heater, or along the chamber body inside the chamber. The choking plate is installed downstream of the top open pumping plate along the purge gas flow. Also provided is a method of preventing emissivity change and further providing optimal film thickness uniformity during wafer processing by utilizing such kit in the chamber.

6645884, Nov 11, 2003

Jul 9, 1999

09/350810

Michael X. Yang - Fremont CA
Karl Littau - Palo Alto CA
Steven A. Chen - Fremont CA
Henry Ho - San Jose CA
Ying Yu - Cupertino CA

Applied Materials, Inc. - Santa Clara CA

H01L 2102

438791, 438584, 438680, 438758, 438774, 438775

The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semiconductor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.

6646235, Nov 11, 2003

Oct 19, 2001

10/037151

Steven Aihua Chen - Fremont CA
Henry Ho - San Jose CA
Michael X. Yang - Fremont CA
Bruce W. Peuse - San Carlos CA
Karl Littau - Palo Alto CA
Yu Chang - San Jose CA

Applied Materials, Inc. - Santa Clara CA

H05B 368

2194441, 118725

A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

7223323, May 29, 2007

Jul 8, 2003

10/616284

Michael X. Yang - Palo Alto CA, US
Ming Xi - Palo Alto CA, US
Russell C. Ellwanger - San Jun Bautista CA, US
Eric B. Britcher - Rancho Cucamonga CA, US
Bernardo Donoso - San Jose CA, US
Lily L. Pang - Fremont CA, US
Svetlana Sherman - San Jose CA, US
Henry Ho - San Jose CA, US
Anh N. Nguyen - Milpitas CA, US
Alexander N. Lerner - San Jose CA, US
Allen L. D'Ambra - Burlingame CA, US
Arulkumar Shanmugasundram - Sunnyvale CA, US
Tetsuya Ishikawa - Saratoga CA, US
Yevgeniy Rabinovich - Fremont CA, US
Dmitry Lubomirsky - Cupertino CA, US
Son T. Nguyen - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

C25B 9/12
C35D 3/38
B08B 3/02

204242, 2042288, 2042751, 205157, 205191, 134 26, 134148, 134151, 134153

Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

20020045362, Apr 18, 2002

Oct 8, 2001

09/973403

Michael Yang - Fremont CA, US
Karl Littau - Palo Alto CA, US
Steven Chen - Fremont CA, US
Henry Ho - San Jose CA, US
Ying Yu - Cupertino CA, US

H01L021/469

438/791000

The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 on to 500 Torr.

60668369, May 23, 2000

Sep 23, 1996

8/717780

Steven Aihua Chen - Fremont CA
Henry Ho - San Jose CA
Mei Chang - Saratoga CA
Ming Xi - Santa Clara CA
Chen-An Chen - Sunnyvale CA
Chiliang Chen - Cupertino CA

Applied Materials, Inc. - Santa Clara CA

F27B 514
C23C 1600

219390

A resistive heating structure for a processing apparatus such as a chemical vapor deposition chamber. The system includes a resistive heating substrate holder including a support surface and a support shaft, the holder being comprised of a first material. The support surface includes a resistive heating element. The support shaft has a given length, and through bores for allowing a thermocouple to engage the support surface and electrical conductors to couple to the resistive heating element in the support surface. A metallic mounting structure is coupled to the support shaft and secured to the process apparatus to create a sealed environment within the holder and mounting structure to protect the electrical leads and thermocouple from the process environment.