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Heather D Leifeste

from Santa Barbara, CA
Age ~44
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Related to:
Nina LeifestePeggie A Leifeste, 71Peggie C Leifeste, 98Jessica E Leifeste, 46Robert C Leifeste, 44Kathleen J Leifeste, 75Kathy LiefesteNeil S Subramanya, 46Stephanie M Leifeste, 43N Leifeste, 67Denise M Leifeste, 71
Connected to:
Alan Q Leifeste, 52Gordon T Leifeste, 74Terry G Leifeste, 81Jeremy I Leiffer, 53Cristen T Leifheit, 40Thomas C Leifholtz, 48Hacienda M Leifi, 41Susan P Leifield, 65Lee D Leifsen, 42Nathan S Leifson, 48

Heather Leifeste Phones & Addresses

  • 687 La Roda Ave, Santa Barbara, CA 93111
  • 7382 Davenport Rd, Goleta, CA 93117
  • Oxnard, CA
  • Ship Bottom, NJ
  • Colonia, NJ

Work

Company: Raytheon 2006 Position: Senior process engineer

Education

Degree: Master of Science, Masters School / High School: Uc Santa Barbara 2003 to 2005 Specialities: Chemical Engineering

Skills

Chemical Engineering • Process Simulation • Design of Experiments • Simulations • Process Engineering • Manufacturing • Engineering Management • Six Sigma • Failure Analysis • R&D • Materials Science • Spc • Semiconductors • Characterization • Thin Films • Lampworking

Languages

English

Interests

Home Improvement • Cooking • Home Decoration • Electronics

Industries

Defense & Space

Resumes

Resumes

Heather Leifeste Photo 1

Senior Process Engineer

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Location:
687 La Roda Ave, Santa Barbara, CA 93111
Industry:
Defense & Space
Work:
Raytheon
Senior Process Engineer
Uc Santa Barbara Jan 2004 - Dec 2005
Research Assistant - Student
Ge Global Research Jun 2001 - Aug 2001
Intern at Ge Corporate Research and Development
Education:
Uc Santa Barbara 2003 - 2005
Master of Science, Masters, Chemical Engineering Carnegie Mellon University 1998 - 2003
Bachelors, Bachelor of Science, Chemical Engineering
Skills:
Chemical Engineering
Process Simulation
Design of Experiments
Simulations
Process Engineering
Manufacturing
Engineering Management
Six Sigma
Failure Analysis
R&D
Materials Science
Spc
Semiconductors
Characterization
Thin Films
Lampworking
Interests:
Home Improvement
Cooking
Home Decoration
Electronics
Languages:
English

Publications

Us Patents

Composite Semiconductor Structure Formed Using Atomic Bonding And Adapted To Alter The Rate Of Thermal Expansion Of A Substrate

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US Patent:
20110042772, Feb 24, 2011
Filed:
Aug 19, 2009
Appl. No.:
12/544075
Inventors:
Andreas Hampp - Santa Barbara CA, US
Tamara H. Wright - Santa Barbara CA, US
Heather D. Leifeste - Goleta CA, US
Assignee:
Raytheon Company - Waltham MA
International Classification:
H01L 31/08
H01L 21/50
US Classification:
257443, 438 67, 257E21499, 257E31052
Abstract:
In certain embodiments, a method includes forming a composite semiconductor structure for altering a rate of thermal expansion of a first substrate. The composite semiconductor structure is formed by atomically bonding a first surface of a thermal matching substrate to a first surface of the first substrate, and atomically bonding a second surface of the thermal matching substrate to a first surface of a balancing substrate. The thermal matching substrate is adapted to alter the rate of thermal expansion of the first substrate and the balancing substrate is adapted to substantially prevent warping of the composite semiconductor structure.
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Heather D Leifeste from Santa Barbara, CA, age ~44 Get Report