Hao Jiang

20140052692, Feb 20, 2014

Aug 15, 2013

13/967939

- Grand Cayman, KY
Hong Tang - Santa Clara CA, US
Hao Jiang - Santa Clara CA, US
Yue Zeng - Santa Clara CA, US
Xiaogang Li - Santa Clara CA, US

Alibaba Group Holding Limited - Grand Cayman

G06F 17/30

707639

The present disclosure provides an example method and system for virtual machine backup based on multilayer de-duplication. A virtual machine snapshot is divided into multiple child data blocks. Each child data block is divided into multiple data segments. Multilayer de-duplication is applied to the virtual machine snapshot to exclude data causing duplicate backup in the virtual machine snapshot. The remaining virtual machine snapshot data after the processing of the multilayer de-duplication is stored.

20220328352, Oct 13, 2022

Jun 18, 2022

17/843966

- Santa Clara CA, US
Hao Jiang - San Jose CA, US
Mehul Naik - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/768
H01L 21/3213
H01L 23/522

Methods of forming fully aligned vias connecting two metal lines extending in two directions are described. The fully aligned via is aligned with the first metal line and the second metal line along both directions. A third metal layer is patterned on a top of a second metal layer in electrical contact with a first metal layer. The patterned third metal layer is misaligned from the top of the second metal layer. The second metal layer is recessed to expose sides of the second metal layer and remove portions not aligned sides of the third metal layer.

20220285212, Sep 8, 2022

Mar 5, 2021

17/193994

- Santa Clara CA, US
Hao JIANG - San Jose CA, US
Shi YOU - San Jose CA, US
Mehul B. NAIK - San Jose CA, US

H01L 21/768

Embodiments of the present disclosure generally relate to subtractive metals, subtractive metal semiconductor structures, subtractive metal interconnects, and to processes for forming such semiconductor structures and interconnects. In an embodiment, a process for fabricating a semiconductor structure is provided. The process includes performing a degas operation on the semiconductor structure and depositing a liner layer on the semiconductor structure. The process further includes performing a sputter operation on the semiconductor structure, and depositing, by physical vapor deposition, a metal layer on the liner layer, wherein the liner layer comprises Ti, Ta, TaN, or combinations thereof, and a resistivity of the metal layer is about 30 μΩcm or less.

20210104434, Apr 8, 2021

Oct 6, 2019

16/594057

- Santa Clara CA, US
Hao Jiang - San Jose CA, US
Mehul Naik - San Jose CA, US
Srinivas D. Nemani - Sunnyvale CA, US
Ellie Yieh - San Jose CA, US

H01L 21/768
H01L 21/285
H01L 21/67
H01L 21/3213
C23C 14/16
C23C 14/58

Methods and apparatus for lowering resistivity of a metal line, including: depositing a first metal layer atop a second metal layer to under conditions sufficient to increase a grain size of a metal of the first metal layer; etching the first metal layer to form a metal line with a first line edge roughness and to expose a portion of the second metal layer; removing impurities from the metal line by a hydrogen treatment process; and annealing the metal line at a pressure between 760 Torr and 76,000 Torr to reduce the first line edge roughness.

20210066064, Mar 4, 2021

Aug 27, 2020

17/004850

- Santa Clara CA, US
Shi YOU - San Jose CA, US
Hao JIANG - San Jose CA, US
Raymond HUNG - Palo Alto CA, US
Mehul NAIK - San Jose CA, US
Chentsau Chris YING - Cupertino CA, US
Lin DONG - Santa Clara CA, US

H01L 21/02

Methods and apparatus for cleaning a contaminated metal surface on a substrate, including: exposing a substrate including a dielectric surface and a metal surface including metal nitride residues and metal carbide residues to a process gas including an oxidizing agent to form a substrate including a dielectric surface and a metal surface including metal oxides residues; and exposing a substrate including a dielectric surface and a metal surface including metal oxides residues to a process gas including a reducing agent to form a substrate including a dielectric surface and a substantially pure metal surface.

20200350206, Nov 5, 2020

May 1, 2020

16/864623

- Santa Clara CA, US
Hao Jiang - San Jose CA, US
Mehul Naik - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/768
H01L 21/3213
H01L 23/522

Methods of forming fully aligned vias connecting two metal lines extending in two directions are described. The fully aligned via is aligned with the first metal line and the second metal line along both directions. A third metal layer is patterned on a top of a second metal layer in electrical contact with a first metal layer. The patterned third metal layer is misaligned from the top of the second metal layer. The second metal layer is recessed to expose sides of the second metal layer and remove portions not aligned sides of the third metal layer.

20190064015, Feb 28, 2019

Aug 27, 2018

16/113059

- Santa Clara CA, US
Hao Jiang - Mountain View CA, US

G01L 3/10
G01L 3/08

A torque sensor is provided that includes a deformable plate that includes an inner part and an outer part. The torque sensor may also include one or more elastic elements that connect the inner part and the outer part. The torque sensor may also include a transducer mounting plate that is rigidly connected to the inner part of the deformable plate. In certain embodiments, the elastic elements include at least one serpentine-shaped elastic element. In other embodiments, the elastic elements may include a beam structure. In some embodiments, the torque sensor includes a plurality of zeroing pins and zeroing pin slots which, when engaged, constrain the rotation of the torque sensor to a smaller zeroing range. In certain embodiments, the torque sensor may also include a plurality of hard stop pins that engage a stopping when an applied torque exceeds a predetermined threshold.

20160378613, Dec 29, 2016

Sep 6, 2016

15/257194

- Grand Cayman, KY
HONG TANG - Santa Clara CA, US
HAO JIANG - Santa Clara CA, US
YUE ZENG - Santa Clara CA, US
XIAOGANG LI - Santa Clara CA, US

G06F 11/14
G06F 17/30

The present disclosure provides an example method and system for virtual machine backup based on multilayer de-duplication. A virtual machine snapshot is divided into multiple child data blocks. Each child data block is divided into multiple data segments. Multilayer de-duplication is applied to the virtual machine snapshot to exclude data causing duplicate backup in the virtual machine snapshot. The remaining virtual machine snapshot data after the processing of the multilayer de-duplication is stored.