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Hanhee Paik

from Ridgefield, CT
Age ~49
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Also known as:
Hahhee Paik
Phone and address:
90 Standish Dr, Ridgefield, CT 06877
Related to:
Jae K Jeong, 50
Connected to:
Aaron H Paik, 31Benjamin S Paik, 42Cassandra M Paik, 35Charlie Paik, 36Christine M Paik, 48Diane K Paik, 33Elisa Paik, 47Esther B Paik, 31Gene G Paik, 43Henry H Paik, 43

Hanhee Paik Phones & Addresses

  • 90 Standish Dr, Ridgefield, CT 06877
  • Danbury, CT
  • Mohegan Lake, NY
  • Cambridge, MA
  • New Haven, CT
  • College Park, MD
  • Greenbelt, MD
  • Hyattsville, MD

Publications

Us Patents

Superconducting Qubit Lifetime And Coherence Improvement Via Backside Etching

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US Patent:
20210399192, Dec 23, 2021
Filed:
Jun 22, 2020
Appl. No.:
16/908704
Inventors:
- Armonk NY, US
Martin O. Sandberg - Ossining NY, US
Vivekananda P. Adiga - Ossining NY, US
Yves Martin - Ossining NY, US
Hanhee Paik - Danbury CT, US
International Classification:
H01L 39/02
H01L 39/22
H01L 39/24
H01L 27/18
Abstract:
A method for improving lifetime and coherence time of a qubit in a quantum mechanical device is provided. The method includes providing a substrate having a frontside and a backside, the frontside having at least one qubit formed thereon, the at least one qubit having capacitor pads. The method further includes at least one of removing an amount of substrate material from the backside of the substrate at an area opposite the at least one qubit or depositing a superconducting metal layer at the backside of the substrate at the area opposite the at least one qubit to reduce radiofrequency electrical current loss due to at least one of silicon-air (SA) interface, metal-air (MA) interface or silicon-metal (SM) interface so as to enhance a lifetime (T1) and a coherence time (T2) in the at least one qubit.

Compact Resonator With Shifted Higher Modes For Quantum Buses

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US Patent:
20210264308, Aug 26, 2021
Filed:
Feb 26, 2020
Appl. No.:
16/802503
Inventors:
- ARMONK NY, US
Vivekananda P. Adiga - Ossining NY, US
Hanhee Paik - Danbury CT, US
International Classification:
G06N 10/00
Abstract:
A resonator is based on a coplanar waveguide (CPW) structure that includes a first end portion having a first width and configured to be coupled to a first qubit. There is a a middle portion having a second width that is narrower than the first width. There is a second end portion having a third width that is wider than the second width and configured to be coupled to a second qubit.

Contactless Screening Of A Qubit

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US Patent:
20210148947, May 20, 2021
Filed:
Dec 29, 2020
Appl. No.:
17/137009
Inventors:
- Armonk NY, US
Vivekananda P. Adiga - Ossining NY, US
Hanhee Paik - Danbury CT, US
Jared Barney Hertzberg - Yorktown Heights NY, US
International Classification:
G01Q 60/00
G06N 10/00
Abstract:
Systems, devices, computer-implemented methods, and computer program products to facilitate contactless screening of a qubit are provided. According to an embodiment, a system can comprise a memory that stores computer executable components and a processor that executes the computer executable components stored in the memory. The computer executable components can comprise a scanner component that establishes a direct microwave coupling of a scanning probe device to a qubit of a quantum device. The computer executable components can further comprise a parameter extraction component that determines qubit frequency of the qubit based on the direct microwave coupling.

Adhesion Layer To Enhance Encapsulation Of Superconducting Devices

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US Patent:
20210143309, May 13, 2021
Filed:
Nov 12, 2019
Appl. No.:
16/681295
Inventors:
- Armonk NY, US
Ali Afzali-Ardakani - Ossining NY, US
Vivekananda P. Adiga - Ossining NY, US
Martin O. Sandberg - Ossining NY, US
Hanhee Paik - Danbury CT, US
International Classification:
H01L 39/02
H01L 39/22
H01L 39/24
G06N 10/00
Abstract:
Techniques regarding encapsulating one or more superconducting devices of a quantum processor are provided. For example, one or more embodiments described herein can regard a method that can comprise depositing an adhesion layer onto a superconducting resonator and a silicon substrate that are comprised within a quantum processor. The superconducting resonator can be positioned on the silicon substrate. Also, the adhesion layer can comprise a chemical compound having a thiol functional group.

Metal Fluoride Encapsulation Of Superconducting Devices

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US Patent:
20210143314, May 13, 2021
Filed:
Nov 12, 2019
Appl. No.:
16/681331
Inventors:
- Armonk NY, US
Vivekananda P. Adiga - Ossining NY, US
Martin O. Sandberg - Ossining NY, US
Hanhee Paik - Danbury CT, US
International Classification:
H01L 39/24
H01L 39/22
H01L 39/12
Abstract:
Techniques regarding encapsulating one or more superconducting devices of a quantum processor are provided. For example, one or more embodiments described herein can regard a method that can comprise depositing a metal fluoride layer onto a superconducting resonator and a silicon substrate that can be comprised within a quantum processor. The superconducting resonator can be positioned on the silicon substrate. Also, the metal fluoride layer can coat the superconducting resonator.

System And Method For Non-Invasive Large-Scale Qubit Device Characterization Technique

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US Patent:
20210134880, May 6, 2021
Filed:
Nov 6, 2019
Appl. No.:
16/676304
Inventors:
- Armonk NY, US
Martin O. Sandberg - Ossining NY, US
Hanhee Paik - Danbury CT, US
Jerry M. Chow - White Plains NY, US
International Classification:
H01L 27/18
G06N 10/00
H01L 39/22
H01L 39/02
Abstract:
According to an embodiment of the present invention, a system for non-invasively characterizing a qubit device includes a characterization probe chip. The characterization probe chip includes a substrate and a characterization resonator formed on a first surface of the substrate. The characterization resonator includes a superconducting stripline, and a superconducting antenna coupled to an end of the superconducting stripline, the superconducting antenna positioned to align with a qubit on the qubit device being characterized. The characterization probe chip also includes and a superconducting ground plane formed on a second surface of the substrate, the second surface opposing the first surface. In operation, the superconducting antenna is configured to capacitively couple the characterization resonator to the qubit aligned with the superconducting antenna for characterization of the qubit.

Transmon Qubits With Trenched Capacitor Structures

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US Patent:
20200328338, Oct 15, 2020
Filed:
Apr 11, 2019
Appl. No.:
16/381563
Inventors:
- Armonk NY, US
Martin O. Sandberg - Ossining NY, US
Jerry M. Chow - White Plains NY, US
Hanhee Paik - Danbury CT, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 39/02
H01L 39/12
H01L 39/22
H01L 39/24
G06N 10/00
Abstract:
A qubit includes a substrate, and a first capacitor structure having a lower portion formed on a surface of the substrate and at least one first raised portion extending above the surface of the substrate. The qubit further includes a second capacitor structure having a lower portion formed on the surface of the substrate and at least one second raised portion extending above the surface of the substrate. The first capacitor structure and the second capacitor structure are formed of a superconducting material. The qubit further includes a junction between the first capacitor structure and the second capacitor structure. The junction is disposed at a predetermined distance from the surface of the substrate and has a first end in contact with the first raised portion and a second end in contact with the second raised portion.

Flip Chip Assembly Of Quantum Computing Devices

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US Patent:
20200235027, Jul 23, 2020
Filed:
Apr 3, 2020
Appl. No.:
16/839248
Inventors:
- Armonk NY, US
Hanhee Paik - Danbury CT, US
Jerry M. Chow - White Plains NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 23/367
H01L 39/22
H01L 23/00
H01L 23/544
H01L 39/04
G06N 10/00
H01L 23/498
Abstract:
In an embodiment, a quantum device includes an interposer layer comprising a set of vias. In an embodiment, the quantum device includes a dielectric layer formed on a first side of the interposer, the dielectric layer including a set of transmission lines communicatively coupled to the set of vias. In an embodiment, the quantum device includes a plurality of qubit chips coupled to an opposite side of the interposer layer, each qubit chip of the plurality of qubit chips including: a plurality of qubits on a first side of the qubit chip and a plurality of protrusions on a second side of the qubit chip. In an embodiment, the quantum device includes a heat sink thermally coupled with the plurality of qubit chips, the heat sink comprising a plurality of recesses aligned with the plurality of protrusions of the plurality of qubit chips.
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Hanhee Paik from Ridgefield, CT, age ~49 Get Report