Gregory K Cestra

7609144, Oct 27, 2009

Dec 8, 2006

11/608668

Michael Lee - High Wycombe, GB
Steven Wright - Northchurch, GB
Philip Judge - Richmond, GB
Craig Wilson - Livermore CA, US
Gregory Cestra - Pleasanton CA, US
Derek Bowers - Los Altos Hills CA, US

Analog Devices, Inc. - Norwood MA

H01C 1/012

338308, 338309, 296101

A thin film composition is made from silicon, an insulator such as alumina or silicon dioxide, and at least one additional material such as chromium, nickel, boron and/or carbon. These materials are combined to provide a thin film having a ρ of at least 0. 02 Ω-cm (typically 0. 02-1. 0 Ω-cm), and a TCR of less than 1000 ppm/ C. (typically less than 300 ppm/ C. ). A sheet resistance of at least 20 kΩ/□ may also be obtained. The resulting thin film is preferably at least 200 thick, to reduce surface scattering conduction currents.

7755117, Jul 13, 2010

Jan 9, 2007

11/621443

Alexander Kalnitsky - San Francisco CA, US
Dong Zheng - San Jose CA, US
Joy Jones - Fremont CA, US
Xijian Lin - Fremont CA, US
Gregory Cestra - Pleasanton CA, US

Intersil Americas Inc. - Milpitas CA

H01L 31/062

257291, 257292, 257294, 257E27133

Embodiments of the present invention are directed to light sensors, that primarily respond to visible light while suppressing infrared light. Such sensors are especially useful as ambient light sensors because such sensors can be used to provide a spectral response similar to that of a human eye. Embodiments of the present invention are also directed to methods of providing such light sensors, and methods for using such light sensors.

7776739, Aug 17, 2010

Sep 9, 2005

11/223367

Gregory K. Cestra - Pleasanton CA, US
Michael Dunbar - San Jose CA, US

Analog Devices, Inc. - Norwood MA

H01L 23/485
H01L 23/495
H01L 21/44

438642, 438618, 438622, 257751, 257781, 257784

A semiconductor device interconnection contact and fabrication method comprises fabricating one or more active devices on a semiconductor substrate. A diffusion barrier layer is deposited over the devices, followed by an Al-based metallization layer. The diffusion barrier and metallization layers are masked and etched to define interconnection traces. Mask and etch steps are then performed to remove interconnection trace metallization that is in close proximity to the active device regions, while leaving the traces' diffusion barrier layer intact to provide conductive paths to the devices, thereby reducing metallization-induced mechanical stress which might otherwise cause device instability.

7960766, Jun 14, 2011

Jun 16, 2010

12/817101

Alexander Kalnitsky - San Francisco CA, US
Dong Zheng - San Jose CA, US
Joy Jones - Fremont CA, US
Xijian Lin - Fremont CA, US
Gregory Cestra - Pleasanton CA, US

Intersil Americas Inc. - Milpitas CA

H01L 31/062

257291, 257292, 257294, 257461, 257E27133

Embodiments of the present invention are directed to light sensors, that primarily respond to visible light while suppressing infrared light. Such sensors are especially useful as ambient light sensors because such sensors can be used to provide a spectral response similar to that of a human eye. Embodiments of the present invention are also directed to methods of providing such light sensors, and methods for using such light sensors.

8309994, Nov 13, 2012

May 5, 2011

13/101667

Alexander Kalnitsky - San Francisco CA, US
Dong Zheng - San Jose CA, US
Joy Jones - Fremont CA, US
Xijian Lin - Fremont CA, US
Gregory Cestra - Pleasanton CA, US

Intersil Americas Inc. - Milpitas CA

H01L 31/062

257291, 257292, 257294, 257E27133

Embodiments of the present invention are directed to light sensors that primarily respond to visible light while suppressing infrared light. Such sensors are especially useful as ambient light sensors because such sensors can be used to provide a spectral response similar to that of a human eye. Embodiments of the present invention are also directed to methods of providing such light sensors, and methods for using such light sensors.

8456410, Jun 4, 2013

Dec 4, 2007

11/950325

Alexander Kalnitsky - San Francisco CA, US
Dong Zheng - San Jose CA, US
Joy Jones - Fremont CA, US
Xijian Lin - Fremont CA, US
Gregory Cestra - Pleasanton CA, US
Phillip J. Benzel - Pleasanton CA, US

Intersil Americas Inc. - Milpitas CA

G09G 3/36

345102, 315158, 362 972

Described herein are light sensors that primarily respond to visible light while suppressing infrared light. Also described herein are systems the incorporate such light sensors. Such a system can include a display, a light source to backlight the display and a controller to control the brightness of the light source based on feedback received from such light sensors. Described herein are also methods for controlling backlighting.

20070145410, Jun 28, 2007

Dec 1, 2006

11/566099

Craig Wilson - Livermore CA, US
Derek Bowers - Los Altos Hills CA, US
Gregory K. Cestra - Pleasanton CA, US

H01L 31/111

257134

The present invention provides a JFET which receives an additional implant during fabrication, which extends its drain region towards its source region, and/or its source region towards its drain region. The implant reduces the magnitude of the e-field that would otherwise arise at the drain/channel (and/or source/channel) junction for a given drain and/or source voltage, thereby reducing the severity of the gate current and breakdown problems associated with the e-field. The JFET's gate layer is preferably sized to have a width which provides respective gaps between the gate layer's lateral boundaries and the drain and/or source regions for each implant, with each implant implanted in a respective gap.