Gianni Taraschi

8092064, Jan 10, 2012

Jun 4, 2007

11/757734

Alexei A. Erchak - Cambridge MA, US
Robert F. Karlicek - Chelmsford MA, US
David Doyle - Somerville MA, US
Gianni Taraschi - Somerville MA, US
Michael A. Joffe - Harvard MA, US
Christian Hoepfner - North Andover MA, US

Rambus International Ltd. - Grand Cayman

F21V 7/04

362613, 362223, 362224, 362225, 362607, 362612, 362615, 362 971, 362 972, 349 65

Illumination assemblies, components, and related methods are described. An illumination assembly is provided that comprises a plurality of illumination tiles each having a light emission surface. The plurality of illumination tiles are arranged in a two-dimensional array. The illumination tiles are constructed and arranged so as to provide a substantially contiguous illumination surface comprising the light emission surfaces of the plurality of the illumination tiles. Each illumination tile is illuminated by at least one solid state light-emitting device. A method of local dimming an illumination assembly of a display (e. g. , LCD) backlight unit is also provided.

8278190, Oct 2, 2012

May 30, 2008

12/130899

Alexei A. Erchak - Billerica MA, US
Michael Lim - Cambridge MA, US
Georgiy Seryogin - Belmont MA, US
Gianni Taraschi - Somerville MA, US

Luminus Devices, Inc. - Billerica MA

H01L 21/00

438460, 438462

Methods of forming light-emitting structures, as well as related devices and/or systems are described. In some cases, the methods utilize a layer transfer and/or layer separation step(s) used to form such structures.

8436388, May 7, 2013

Aug 24, 2011

13/216837

Michael Lim - Cambridge MA, US
David Doyle - Somerville MA, US
Alexander L Pokrovskiy - Burlington MA, US
Alexei A Erchak - Cambridge MA, US
Gianni Taraschi - Somerville MA, US
Nikolay I Nemchuk - North Andover MA, US

Rambus International Ltd. - Grand Cayman

F21V 8/00

257 98, 257 99, 257294

Illumination assemblies, components, and related methods are described. An illumination assembly can include at least one solid state light-emitting device, an emission surface through which light is emitted, and a wavelength converting material that wavelength converts at least some light emitted by the solid state light-emitting device. The wavelength converting material can have a first density per unit area of the emission surface at a first location and a second density per unit area of the emission surface at a second location, wherein the second density is substantially different from the first density, and wherein the density per unit area is defined with a 1×1 cmaveraging area. Another illumination assembly can include a light guide configured to receive light emitted by a solid state light-emitting device. The light guide can have a length along which received light propagates and an emission surface substantially parallel to the length of the light guide and through which light is emitted. A wavelength converting material can have a density per unit area of the emission surface that substantially increases along the length of the light guide.

8585273, Nov 19, 2013

Jul 31, 2007

11/831267

Alexander L. Pokrovskiy - Burlington MA, US
David Doyle - Somerville MA, US
Michael Lim - Cambridge MA, US
Alexei A. Erchak - Cambridge MA, US
Nikolay I. Nemchuk - North Andover MA, US
Gianni Taraschi - Somerville MA, US

Rambus Delaware LLC - Brecksville OH

F21V 7/04

362615, 362231

Illumination assemblies, components, and related methods are described. An illumination assembly can include at least one solid state light-emitting device, and at least one light guide including a light homogenization region configured to receive light emitted by the solid state light-emitting device and including a light output boundary. The light homogenization region substantially uniformly distributes light outputted over the light output boundary. A wavelength converting material can be disposed within at least a portion of the light homogenization region. In some assemblies, a light extraction region can be configured to receive light from the light output boundary of the light homogenization region, and can have a length along which received light propagates and an emission surface through which light is emitted. The light extraction region can include a wavelength converting material disposed within at least a portion of the light extraction region.

20040000268, Jan 1, 2004

Jun 25, 2003

10/603852

Kenneth Wu - San Francisco CA, US
Eugene Fitzgerald - Windham NH, US
Gianni Taraschi - Andover MA, US
Jeffrey Borenstein - Holliston MA, US

Massachusetts Institute of Technology - Cambridge MA

C30B023/00
C30B025/00
C30B028/12
C30B028/14

117/094000

A SiGe monocrystalline etch-stop material system on a monocrystalline silicon substrate. The etch-stop material system can vary in exact composition, but is a doped or undoped SiGealloy with x generally between 0.2 and 0.5. Across its thickness, the etch-stop material itself is uniform in composition. The etch stop is used for micromachining by aqueous anisotropic etchants of silicon such as potassium hydroxide, sodium hydroxide, lithium hydroxide, ethylenediamine/pyrocatechol/pyrazine (EDP), TMAH, and hydrazine. These solutions generally etch any silicon containing less than cmof boron or undoped SiGealloys with x less than approximately 18. Alloying silicon with moderate concentrations of germanium leads to excellent etch selectivities, i.e., differences in etch rate versus pure undoped silicon. This is attributed to the change in energy band structure by the addition of germanium. Furthermore, the nondegenerate doping in the SiGealloy should not affect the etch-stop behavior. The etch-stop of the invention includes the use of a graded-composition buffer between the silicon substrate and the SiGe etch-stop material. Nominally, the buffer has a linearly-changing composition with respect to thickness, from pure silicon at the substrate/buffer interface to a composition of germanium, and dopant if also present, at the buffer/etch-stop interface which can still be etched at an appreciable rate. Here, there is a strategic jump in germanium and concentration from the buffer side of the interface to the etch-stop material, such that the etch-stop layer is considerably more resistant to the etchant. This process and layer structure allows for an entire range of new materials for microelectronics. The etch-stop capabilities introduce new novel processes and structures such as relaxed SiGe alloys on Si, SiO, and SiO/Si. Such materials are useful for future strained Si MOSFET devices and circuits.

20040137698, Jul 15, 2004

Aug 29, 2003

10/652774

Gianni Taraschi - Somerville MA, US
Eugene Fitzgerald - Windham NH, US

H01L021/30
H01L021/46

438/458000

A method is disclosed for creating a transferred composite in accordance with an embodiment of the invention. The method includes the steps of depositing a buffer structure that on a first substrate; depositing a bonding structure including at least one layer of a strained semiconductor material on the buffer structure, wafer bonding the exposed surface of the bonding structure to a second substrate to form a wafer bonded pair; and removing the first substrate and at least a portion of the buffer structure. The layer of a strained semiconductor material has a thickness that is greater than the equilibrium critical thickness of said layer of strained semiconductor material, in accordance with an embodiment of the invention whereby the strained semiconductor layer is grown at low temperatures.

20050280081, Dec 22, 2005

Oct 1, 2004

10/956485

David Isaacson - Boston MA, US
Gianni Taraschi - Somerville MA, US
Eugene Fitzgerald - Windham NH, US

Massachusetts Institute of Technology - Cambridge MA

H01L031/0336

257335000

A semiconductor-based structure includes first, second, and intermediate layers, with the intermediate layer bonded directly to the first layer, and in contact with the second layer. Parallel to the bonded interface, the lattice spacing of the second layer is different than the lattice spacing of the first layer, though first and second layers are each formed of essentially the same semiconductor. A method for making a semiconductor-based structure includes directly bonding a first layer to an intermediate layer, and providing a second layer in contact with the intermediate layer.

20080205078, Aug 28, 2008

Jun 4, 2007

11/757752

Robert F. Karlicek - Chelmsford MA, US
Christian Hoepfner - North Andover MA, US
David Doyle - Somerville MA, US
Gianni Taraschi - Somerville MA, US
Michael A. Joffe - Harvard MA, US
Alexei A. Erchak - Cambridge MA, US

Luminus Devices, Inc. - Woburn MA

F21V 8/00
F21V 7/00

362612, 362617

Illumination assemblies, components, and related methods are described. A plurality of illumination tiles may be arranged in a two-dimensional array. In one embodiment, an illumination tile comprises at least one solid state light-emitting device and a light guide including an edge constructed and arranged to receive light from the solid state light-emitting device, and a top emission surface constructed and arranged to emit light received by the edge, wherein the solid state light-emitting device is disposed under the top emission surface. In another embodiment, an illumination tile comprises at least one solid state light-emitting device and a light guide including a light input portion including an edge constructed and arranged to receive light from the light-emitting device and a top surface, and a light extraction portion including a top emission surface constructed and arranged to emit light received by the edge, wherein the top surface of the light input portion is offset vertically from the top emission surface of the light extraction portion.