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George J Tkach

from Santa Clara, CA
Deceased
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Also known as:
George James Tkach, George Kr Tkach, George D Tkach, George E Tkach, George M Tkach, Geo Tkach, Jim Tkach, James Tkach
Phone and address:
877 Baird Ave, Santa Clara, CA 95054
(408) 569-0905
Related to:
Andrea Christine Ellery, 48Joseph S Tkach, 57Jessica J Tkach, 32Erik L Tkach, 34Christopher M Tkach, 33Theresa M Tkach, 66Michael D Tkach, 62Johni J Griffith, 61Jan D Tkach, 65Donna J Tkach, 88Ipp Petra Tkach, 54Petra Tkach
Connected to:
Anton Tkach, 65Carly A Tkach, 30Christopher D Tkach, 38Cynthia A Tkach, 54Dmitry A Tkach, 45Erin M Tkach, 36Frances L Tkach, 89Igor A Tkach, 67Katie Tkach, 31

George Tkach Phones & Addresses

  • 877 Baird Ave, Santa Clara, CA 95054 (408) 569-0905
  • 15471 Corinne Dr, Los Gatos, CA 95032 (408) 356-2582
  • Sunnyvale, CA
  • Campbell, CA
  • Palo Alto, CA
  • Woodbridge, NJ

Publications

Us Patents

Pvd Deposition Of Titanium And Titanium Nitride Layers In The Same Chamber Without Use Of A Collimator Or A Shutter

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US Patent:
6342133, Jan 29, 2002
Filed:
Mar 14, 2000
Appl. No.:
09/524987
Inventors:
Gerard Chris DCouto - San Jose CA
George Tkach - Santa Clara CA
Jeff Dewayne Lyons - Hayward CA
Max Biberger - Palo Alto CA
Kwok Fai Lai - Palo Alto CA
Jean Lu - Palo Alto CA
Kaihan Ashtiani - Sunnyvale CA
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
C23C 1435
US Classification:
20419217, 20419215, 20419222
Abstract:
Ti and TiN layers are formed on an integrated circuit substrate using a titanium target in non-nitrided mode in a hollow cathode magnetron apparatus. Neither a collimator nor a shield is used. Ti and TiN layers are deposited in vias and trenches having aspect ratios up to 5:1.

Use Of Rf Biased Esc To Influence The Film Properties Of Ti And Tin

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US Patent:
6652718, Nov 25, 2003
Filed:
Jan 30, 2002
Appl. No.:
10/060724
Inventors:
Gerard C. DCouto - San Jose CA
George Tkach - Santa Clara CA
Michal Danek - Cupertino CA
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
C23C 1434
US Classification:
2041923, 20419215, 20419222
Abstract:
A method of depositing thin films comprising Ti and TiN within vias and trenches having high aspect ratio openings of 6:1 is disclosed. The Ti and TiN layers are formed on an integrated circuit substrate using a Ti target in a non-nitrided mode in a hollow cathode magnetron apparatus in combination with an RF biased electrostatic chuck to modulate the properties of the deposited Ti and TiN layers in the same chamber, without the use of a collimator or a shutter. The resulting Ti and TiN layers are superior in step coverage, grain size, grain orientation, roughness and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.

Control Of The Deposition Temperature To Reduce The Via And Contact Resistance Of Ti And Tin Deposited Using Ionized Pvd Techniques

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US Patent:
6673716, Jan 6, 2004
Filed:
Jan 30, 2002
Appl. No.:
10/060725
Inventors:
Gerard C. DCouto - San Jose CA
George Tkach - Santa Clara CA
Michael Woitge - Dresden, DE
Michal Danek - Cupertino CA
Assignee:
Novellus Systems, Inc. - San Jose CA
International Classification:
H01L 2122
US Classification:
438656, 438625, 438643, 438694, 438648, 438679, 20419212, 20429809, 20429812
Abstract:
A method of depositing thin films comprising Ti and TiN within vias and trenches having high aspect ratio openings. The Ti and TiN layers are formed on an integrated circuit substrate using a Ti target in a non-nitrided mode in a hollow cathode magnetron apparatus in combination with controlling the deposition temperatures by integrating cooling steps into the Ti/TiN deposition processes to modulate the via and contact resistance. The Ti and TiN layers are deposited within a single deposition chamber, without the use of a collimator or a shutter.
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George J Tkach from Santa Clara, CADeceased Get Report