US Patent:
20030228500, Dec 11, 2003
Inventors:
Jerome Schmitt - Dawsonville GA, US
George Cui - Orange CT, US
Henry Luten III - Ypsilanti MI, US
Fang Yang - Atlanta GA, US
Fe Gladden - Duluth GA, US
Scott Flanagan - Atlanta GA, US
Yongdong Jiang - Atlanta GA, US
Andrew Hunt - Atlanta GA, US
International Classification:
B32B009/00
Abstract:
Epitaxial and reduced grain boundary materials are deposited on substrates for use in electronic and optical applications. A specific material disclosed is epitaxial barium strontium titanate () deposited on the C-plane of sapphire ().