US Patent:
20040191999, Sep 30, 2004
Inventors:
Pr Chidambaram - Richardson TX, US
Srinivasan Chakravarthi - Richardson TX, US
Gautam Thakar - Plano TX, US
Toan Tran - Rowlett TX, US
Assignee:
Texas Instruments Incroporated
International Classification:
H01L021/336
Abstract:
Fabricating a semiconductor includes forming a conductive layer outwardly from a surface of a substrate. A mask layer comprising a hard mask is deposited outwardly from the conductive layer to pattern the conductive layer to form a gate stack. The conductive layer is etched to remove the conductive layer from the surface of the substrate and to form the gate stack, where the mask layer is disposed outwardly from the gate stack. Ions are implanted outwardly from the surface of the substrate, where the mask layer prevents at least a portion of the ions from penetrating the gate stack while penetrating the substrate.
