Inventors:
Yi-Qun Li - Walnut Creek CA
Xiao-Dong Xiang - Alameda CA
Yi Dong - Albany CA
Shifan Cheng - Concord CA
Gang Wang - Albany CA
Ning Wang - Concord CA
Assignee:
Intematix Corporation - Moraga CA
International Classification:
B32B 900
US Classification:
428702, 428701, 501134, 501137
Abstract:
Composition for a solid state material, in bulk and in thin film form, that provides relatively high dielectric permittivity that is tunable with variable electrical field bias, relatively low loss tangent and low leakage current for microwave applications. In a first embodiment, the material is Ba Sr Ti M O , where M is a substance or mixture including one or more elements drawn from a group consisting of Ta, Zr, Hf, V, Nb, Al, Ga, Cr, Mo, W, Mn, Sc and Re, and the indices x and y satisfy 0x1 and 0y1. A preferred choice is M=Ta, V, W, Mo and/or Nb. In a second embodiment, the material is Ba Sr Ti Ta M O , where M is a substance or mixture including one or more trivalent elements drawn from a group consisting of Al, Ga and Cr and the indices x, y and z satisfy 0x+z1 and 0y1.